DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD47 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1999 Nov 11 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD87 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Shipped in 8 mm embossed tape k handbook, 4 columns a • Smallest surface mount rectifier outline. MAM061 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM PARAMETER CONDITIONS MIN. MAX. UNIT BYD47-16 − 1700 V BYD47-18 − 1900 V BYD47-20 − 2100 V BYD47-16 − 1600 V BYD47-18 − 1800 V BYD47-20 − 2000 V non-repetitive peak reverse voltage repetitive peak reverse voltage IF(AV) average forward current Ttp = 105 °C; see Fig.2; averaged over any 20 ms period; see also Fig.6 − 0.80 A IF(AV) average forward current Tamb = 25 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 0.34 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current Tstg storage temperature Tj junction temperature 1999 Nov 11 Ttp = 85 °C; see Fig.4 − 8.0 A Tamb = 65 °C; see Fig.5 − 2.8 A t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 10 A see Fig.7 2 −65 +175 °C −65 +175 °C Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS TYP. MAX. UNIT IF = 1 A; Tj = Tj max; see Fig.8 − 2.05 V IF = 1 A; see Fig.8 − 2.40 V VR = VRRMmax; see Fig.9 − 5 µA VR = VRRMmax; Tj = 125 °C; see Fig.9 − 50 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 − 300 ns Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.10 15 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 − dI R -------dt 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE UNIT 30 K/W 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. 1999 Nov 11 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series GRAPHICAL DATA MLC194 1.6 MLC195 0.4 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 1.2 0.3 0.8 0.2 0.4 0.1 0 0 100 0 T tp ( oC) 200 0 100 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Tamb ( o C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MLC198 10 handbook, full pagewidth I FRM (A) 8 δ = 0.05 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Ttp = 85 °C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 2000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 11 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series MLC199 3 handbook, full pagewidth I FRM (A) δ = 0.05 2 0.1 0.2 1 0.5 1 0 10 2 10 1 1 10 2 10 10 3 10 4 t p (ms) Tamb = 65 °C; Rth j-a = 150 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 2000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLC193 3 MLC197 200 handbook, halfpage handbook, halfpage P (W) a = 3 2.5 2 Tj ( oC) 1.57 2 1.42 100 1 BYD47 16 0 0.4 0 I F(AV) (A) 0 0.8 1000 0 VR (V) 18 20 2000 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.6 Solid line = VRRM; δ = 0.5. Dotted line = VRRM; δ = 0.1. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1999 Nov 11 Fig.7 5 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series MLC192 3 MLC319 103 handbook, halfpage handbook, halfpage IF (A) IR (µA) 2 102 1 10 0 1 0 2 4 V F (V) 0 100 200 Tj ( o C) Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Fig.9 Forward current as a function of forward voltage; maximum values. Reverse current as a function of junction temperature; maximum values. MLC317 10 handbook, halfpage 50 Cd (pF) 4.5 50 2.5 1 1 10 102 V R (V) 1.25 103 MSB213 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 1999 Nov 11 Fig.11 Printed-circuit board for surface mounting. 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers handbook, full pagewidth BYD47 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1999 Nov 11 7 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Nov 11 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series NOTES 1999 Nov 11 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series NOTES 1999 Nov 11 10 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD47 series NOTES 1999 Nov 11 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135002/03/pp12 Date of release: 1999 Nov 11 Document order number: 9397 750 06273