VISHAY SUD50N04-8M8P-4GE3

SUD50N04-8m8P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0088 at VGS = 10 V
50
0.0105 at VGS = 4.5 V
50
VDS (V)
40
Qg (Typ.)
16 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• LCD Display Backlight Inverters
• DC/DC Converters
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
40
± 20
V
14b
11.2b
100
40
A
2.6b
30
45
48.1
30.8
mJ
W
3.1b
2.0b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
50a
44
IDM
Pulsed Drain Current
Limit
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Steady State
Symbol
RthJA
Typical
Maximum Junction-to-Ambientb
32
40
Maximum Junction-to-Case
Steady State
RthJC
2.1
2.6
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
www.vishay.com
1
SUD50N04-8m8P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 1.0 mA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
gfs
mV/°C
- 5.9
1.5
3.0
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 70 °C
20
VDS ≥ 5 V, VGS = 10 V
RDS(on)
V
44
50
µA
A
VGS = 10 V, ID = 20 A
0.0069
0.0088
VGS = 4.5 V, ID = 15 A
0.0084
0.0105
VDS = 15 V, ID = 15 A
75
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2400
VDS = 20 V, VGS = 0 V, f = 1 MHz
260
pF
100
VDS = 20 V, VGS = 10 V, ID = 20 A
VDS = 20 V, VGS = 4.5 V, ID = 20 A
37
56
16
24
6.5
nC
4.5
f = 1 MHz
td(on)
VDD = 20 V, RL = 1 Ω
ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
2.5
5.5
8.5
30
45
15
25
45
70
tf
15
25
td(on)
9
15
VDD = 20 V, RL = 1 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
5
10
40
60
5
10
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
40
100
IS = 10 A
IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.81
1.2
V
22
35
ns
14
25
nC
11
11
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS = 10 V thru 5 V
VGS = 4 V
80
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
20
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
0.012
1.5
R DS(on) - On-Resistance (Ω)
1.2
I D - Drain Current (A)
40
20
VGS = 3 V
0
0.0
60
0.9
0.6
TC = 25 °C
0.010
VGS = 4.5 V
0.008
VGS = 10 V
0.006
0.3
TC = 125 °C
TC = - 55 °C
0.004
0.0
0
1
2
3
4
0
5
40
60
80
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
On-Resistance vs. Drain Current
100
10
3200
ID = 20 A
VGS - Gate-to-Source Voltage (V)
Ciss
2400
C - Capacitance (pF)
20
1600
800
Coss
Crss
0
0
VDS = 10 V
8
VDS = 20 V
6
VDS = 30 V
4
2
0
5
10
15
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
20
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
www.vishay.com
3
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.0
TJ = 25 °C
ID = 20 A
VGS = 10 V
10
1.4
VGS = 4.5 V
1.1
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
1.7
1
TJ = 150 °C
0.1
TJ = - 55 °C
0.8
0.01
0.5
- 50
- 25
0
25
50
75
100
125
0.001
0.0
150
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.6
0.030
0.025
0.2
VGS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
ID = 7.2 A
0.020
0.015
TJ = 125 °C
- 0.2
ID = 1 mA
- 0.6
0.010
ID = 250 µA
TJ = 25 °C
0.005
0
2
4
6
8
- 1.0
- 50
10
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
500
1000
400
100
I D - Drain Current (A)
Power (W)
Limited by RDS(on)*
300
200
TA = 25 °C
0
0.0001
0.001
0.01
0.1
1
Time (s)
Single Pulse, Junction-to-Ambient
www.vishay.com
4
100 µs
10
10
1 ms
10 ms,
100 ms, DC
1
0.1
100
10 µs
0.01
0.1
TC = 25 °C
Single Pulse
BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
I D - Drain Current (A)
45
Package Limited
30
15
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
4.0
70
3.5
60
50
2.5
Power (W)
Power (W)
3.0
2.0
40
30
1.5
20
1.0
10
0.5
0.0
0
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Power Derating, Junction-to-Ambient
150
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
www.vishay.com
5
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68647.
www.vishay.com
6
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
Package Information
Vishay Siliconix
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.410
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
Document Number: 71197
18-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1