SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • LCD Display Backlight Inverters • DC/DC Converters TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current 40 ± 20 V 14b 11.2b 100 40 A 2.6b 30 45 48.1 30.8 mJ W 3.1b 2.0b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit 50a 44 IDM Pulsed Drain Current Limit °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 32 40 Maximum Junction-to-Case Steady State RthJC 2.1 2.6 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 www.vishay.com 1 SUD50N04-8m8P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 1.0 mA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 5.9 1.5 3.0 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 70 °C 20 VDS ≥ 5 V, VGS = 10 V RDS(on) V 44 50 µA A VGS = 10 V, ID = 20 A 0.0069 0.0088 VGS = 4.5 V, ID = 15 A 0.0084 0.0105 VDS = 15 V, ID = 15 A 75 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2400 VDS = 20 V, VGS = 0 V, f = 1 MHz 260 pF 100 VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A 37 56 16 24 6.5 nC 4.5 f = 1 MHz td(on) VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) 2.5 5.5 8.5 30 45 15 25 45 70 tf 15 25 td(on) 9 15 VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 5 10 40 60 5 10 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 40 100 IS = 10 A IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.81 1.2 V 22 35 ns 14 25 nC 11 11 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 SUD50N04-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS = 10 V thru 5 V VGS = 4 V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 TC = 25 °C TC = 125 °C TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.012 1.5 R DS(on) - On-Resistance (Ω) 1.2 I D - Drain Current (A) 40 20 VGS = 3 V 0 0.0 60 0.9 0.6 TC = 25 °C 0.010 VGS = 4.5 V 0.008 VGS = 10 V 0.006 0.3 TC = 125 °C TC = - 55 °C 0.004 0.0 0 1 2 3 4 0 5 40 60 80 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics On-Resistance vs. Drain Current 100 10 3200 ID = 20 A VGS - Gate-to-Source Voltage (V) Ciss 2400 C - Capacitance (pF) 20 1600 800 Coss Crss 0 0 VDS = 10 V 8 VDS = 20 V 6 VDS = 30 V 4 2 0 5 10 15 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 20 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD50N04-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 TJ = 25 °C ID = 20 A VGS = 10 V 10 1.4 VGS = 4.5 V 1.1 I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.7 1 TJ = 150 °C 0.1 TJ = - 55 °C 0.8 0.01 0.5 - 50 - 25 0 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.6 0.030 0.025 0.2 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) ID = 7.2 A 0.020 0.015 TJ = 125 °C - 0.2 ID = 1 mA - 0.6 0.010 ID = 250 µA TJ = 25 °C 0.005 0 2 4 6 8 - 1.0 - 50 10 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 500 1000 400 100 I D - Drain Current (A) Power (W) Limited by RDS(on)* 300 200 TA = 25 °C 0 0.0001 0.001 0.01 0.1 1 Time (s) Single Pulse, Junction-to-Ambient www.vishay.com 4 100 µs 10 10 1 ms 10 ms, 100 ms, DC 1 0.1 100 10 µs 0.01 0.1 TC = 25 °C Single Pulse BVDSS 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 SUD50N04-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 I D - Drain Current (A) 45 Package Limited 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating*, Junction-to-Case 4.0 70 3.5 60 50 2.5 Power (W) Power (W) 3.0 2.0 40 30 1.5 20 1.0 10 0.5 0.0 0 0 25 50 75 100 125 TJ - Junction Temperature (°C) Power Derating, Junction-to-Ambient 150 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 www.vishay.com 5 SUD50N04-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68647. www.vishay.com 6 Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 Package Information Vishay Siliconix TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.410 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. Document Number: 71197 18-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1