New Product SiR862DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 28.4 nC PowerPAK® SO-8 APPLICATIONS S 6.15 mm • DC/DC Conversion - Low-Side Switch • Notebook • Server • Game Console 5.15 mm 1 S 2 S 3 G D 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: SiR862DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 25 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak V 50e 50e 32b, c 22.8b, c 70 IDM Pulsed Drain Current Unit A 50e 4.7b, c 40 80 69 44.4 PD mJ W 5.2b, c 3.3b, c - 55 to 150 260 TJ, Tstg Temperature)f, g °C THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 19 1.2 Maximum 24 1.8 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 65 °C/W. e. Package limited. f. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 www.vishay.com 1 New Product SiR862DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 25 ID = 250 µA mV/°C - 5.8 VGS(th) VDS = VGS , ID = 250 µA 2.3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1.2 30 µA A VGS = 10 V, ID = 15 A 0.0023 0.0028 VGS = 4.5 V, ID = 10 A 0.0028 0.0035 VDS = 10 V, ID = 15 A 80 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 3800 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time nC 7.0 f = 1 MHz VDD = 10 V, RL = 10 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 1.1 2.2 28 55 16 30 75 17 34 td(on) 12 24 VDD = 10 V, RL = 10 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 90 43 39 td(off) Turn-Off Delay Time 60 28.4 tf tr Rise Time pF 9.3 VDS = 15 V, VGS = 4.5 V, ID = 10 A td(on) Turn-On Delay Time 890 344 9 18 33 65 9 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 50 ISM VSD 70 IS = 5 A 0.72 1.1 A V Body Diode Reverse Recovery Time trr 31 60 ns Body Diode Reverse Recovery Charge Qrr 22 42 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 15 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 10 VGS = 10 V thru 3 V 8 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 14 TC = 125 °C 6 4 TC = - 55 °C 2 TC = 25 °C VGS = 2 V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0030 4600 Ciss VGS = 4.5 V 0.0028 3680 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 0.0026 0.0024 0.0022 VGS = 10 V 2760 1840 Coss 920 Crss 0.0020 0 0 14 28 42 56 70 0 5 ID - Drain Current (A) 10 1.6 ID = 10 A VGS = 10 V ID = 10 A 8 1.4 R DS(on) - On-Resistance (Normalized) - Gate-to-Source Voltage (V) 25 Capacitance 10 GS 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage V 15 VDS = 5 V 6 VDS = 10 V VDS = 15 V 4 2 1.2 VGS = 4.5 V 1.0 0.8 0 0 13 26 39 52 65 0.6 - 50 - 25 0 25 50 75 100 125 Qg - TotalGateCharge (nC) TJ - JunctionTemperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 150 www.vishay.com 3 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.015 100 ID = 15 A TJ = 150 °C 0.012 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 ID = 250 µA 160 - 0.1 Power (W) V GS(th) Variance (V) 0.2 ID = 5 mA - 0.4 - 0.7 - 1.0 - 50 120 80 40 - 25 0 25 50 75 100 125 0 150 0 .0 0 1 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 130 ID - Drain Current (A) 104 78 52 Package Limited 26 0 0 25 50 75 100 125 150 TC - CaseTemperature (°C) 90 2.5 72 2.0 54 1.5 Power (W) Power (W) Current Derating* 36 1.0 0.5 18 0.0 0 0 25 50 75 100 TC - CaseTemperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 www.vishay.com 5 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 t1 t2 10 - 2 10 -3 4. Surface Mounted -1 10 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65672. www.vishay.com 6 Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1