New Product Si5410DU Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability and Date Code 4 Part # Code S 6 RoHS COMPLIANT D XXX D D 8 AJ • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • 100 % UIS Tested APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications • DC-DC Synchronous Rectification G S 5 Bottom View S N-Channel MOSFET Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 12a ID 9.8b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy 7.9b, c 30 IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C IAS 2.6b, c 19 EAS 18 mJ 31 20 PD W 3.1b, c TA = 70 °C 2b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range A 12a IS TC = 25 °C Maximum Power Dissipation V 12a TA = 70 °C Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t≤5s RthJA 34 40 Steady State RthJC 3 4 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 69827 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 New Product Si5410DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 45 mV/°C -7 1.2 3 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 6.6 A 0.015 0.018 VGS = 4.5 V, ID = 6.1 A 0.017 0.021 VDS = 15 V, ID = 6.6 A 30 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1350 VDS = 20 V, VGS = 0 V, f = 1 MHz 70 VDS = 20 V, VGS = 10 V, ID = 9.8 A VDS = 20 V, VGS = 4.5 V, ID = 9.8 A td(off) 21 32 10 15 4.5 f = 1 MHz VDD = 20 V, RL = 2.5 Ω ID ≅ 7.9 A, VGEN = 4.5 V, Rg = 1 Ω Ω 3.5 25 40 15 25 25 40 tf 12 20 td(on) 10 15 15 25 22 35 10 15 tr td(off) nC 3.1 td(on) tr pF 150 VDD = 20 V, RL = 2.5 Ω ID ≅ 7.9 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 30 IS = 7.9 A, VGS = 0 V IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 25 40 ns 22 35 nC 15 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69827 S-81448-Rev. B, 23-Jun-08 New Product Si5410DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 10 VGS = 10 thru 4 V TC = - 55 °C 8 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 6 4 TC = 25 °C 2 5 TC = 125 °C VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 35 40 125 150 1800 1500 0.022 0.019 C - Capacitance (pF) Ciss VGS = 4.5 V 0.016 VGS = 10 V 1200 900 600 0.013 Coss 300 0.010 Crss 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 9.8 A ID = 6.6 A VDS = 20 V 1.6 8 VGS = 10 V VDS = 32 V 6 4 2 1.4 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) 0.025 RDS(on) - On-Resistance (Ω) 0.5 1.2 1.0 0.8 0 0 5 10 15 Qg - TotalGateCharge(nC) Gate Charge Document Number: 69827 S-81448-Rev. B, 23-Jun-08 20 25 0.6 - 50 - 25 0 25 50 75 100 TJ - JunctionTemperature(°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5410DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.040 100 ID = 6.6 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.035 TJ = 150 °C 10 TJ = 25 °C 0.030 0.025 TA = 125 °C 0.020 0.015 TA = 25 °C 1 0.0 0.010 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-DrainVoltage(V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 ID = 250 µA 40 Power (W) VGS(th) (V) 2.2 2.0 1.8 30 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 100 µs 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69827 S-81448-Rev. B, 23-Jun-08 New Product Si5410DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 40 30 Power Dissipation (W) I D - Drain Current (A) 30 20 Package Limited 10 25 20 15 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69827 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 New Product Si5410DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69827. www.vishay.com 6 Document Number: 69827 S-81448-Rev. B, 23-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1