Since the introduction of the world’s smallest TVS diode Typical applications protected by INFINEON TVS dio- back in 2007, INFINEON has greatly enlarged its portfolio des include (see also Table 1): of small and thin TVS diodes. Today INFINEON continues successfully supporting the miniaturization’s roadmap of USB 3.0/USB 2.0, HDMI 1.3/1.4, DisplayPort and DVI modern wireless electronics with more and more products FM radio, mobile TV and GPS antenna systems. suited for the most challenging applications. Audio lines, microphone, speaker, headset. Trackball, keypad, keyboard, power lines. These diode devices are used for reliable ESD system level protection in a variety of electronic products (see Common Strategy for Efficient ESD Protection graph with target applications). Infineon’s diodes are designed to exceed the maximum External interfaces such as connectors and antenna sys- level (level 4: ±8kV contact discharge, ±15kV air dischar- tems are common entry points for electrostatic discharges. ge) specified by IEC61000-4-2 industry standard. For in- In today’s highly susceptible electronics, ESD represents a stance, Infineon TVS diodes are specified to endure mul- threat to system reliability. Therefore efficient protection of tiple ESD events of ±20kV and up to ±30kV (see Table 1) critical pins via external diode devices is compulsory. without requiring supplementary components. Table 1 - Applications, part names and parameters. For further information please refer to data sheets. Application Examples Audio/Speaker Headset Lines Trackball Keypad/Keyboard Power Lines USB2.0/3.0 HDMI1.3/1.4 DisplayPort DVI GPS antenna FM radio antenna DVB-T/H w/o GSM UWB w/o GSM ESD Ipp Protected IEC 61000-4-2 IEC61000-4-5 lines contact [kV] (8/20µs) [A] Infineon Part Name VRWM [V] Vc (2) [V] IR Ct [pF] Package ESD5V3S1B-02LS (4) ±5.3 1 16.5 2 15 (max) 1uA max 20 (max) TSSLP-2 (0201) ESD5V3S1U-02LS (4) +5.3 1 16.5 2 15 (max) 0.1uA max 40 (max) TSSLP-2 ESD8V0R1B-02LS -8/14 1 15 1 23 <1nA 4.0 TSSLP-2 ESD5V3S1B-02LRH ±5.3 1 20 5.5 11 1uA max 17 TSLP-2 ESD5V3S1U-02LRH +5.3 1 20 5.5 11 1uA max 35 TSLP-2 ESD5V3L1U-02LRH +5.3 1 30 6 10 <1nA 1.0 TSLP-2 ESD8V0L1B-02LRH -8/14 1 25 2.5 26/20 @±15kV(3) <1nA 8.5 TSLP-2 ESD8V0R1B-02LRH -8/14 1 15 1 23 <1nA 4.0 TSLP-2 <1nA 4.0 TSLP-3 26/20 @±15kV (3) ESD8V0L2B-03L -8/14 2 15 1 ESD5V3U1U-02LS +5.3 1 20 3 12 <10 nA 0.4 TSSLP-2 ESD3V3U1U-02LS +5.3 1 20 3 12 <1 nA 0.4 TSSLP-2 ESD5V3U1U-02LRH +5.3 1 20 3 12 <10 nA 0.4 TSLP-2 ESD3V3U1U-02LRH +5.3 1 20 3 12 <1 nA 0.4 TSLP-2 ESD5V3U2U-03RLH +5.3 2 20 3 12 <1 nA 0.4 TSLP-3 ESD0P2RF-02LS ±5.3 1 20 3 16 <1 nA 0.2 (1GHz) TSSLP-2 (0201) ESD0P2RF-02LRH ±5.3 1 20 3 16 <1 nA 0.2 (1GHz) TSLP-2 ESD5V3L1U-02LRH +5.3 1 30 6 10 <1nA 1.0 TSLP-2 ESD0P8RFL 50 1 20 10 12 100nA (max) 0.8 (1GHz) ESD0P4RFL 50 1 15 5 6 20nA 0.4 (1GHz) TSLP-4 (0402) TSLP-4 (0402) Typical values are given unless other indicated. (1) Line to ground capacitance at 0V and 1MHz unless indicated. (2) Ipp according to IEC61000-4-5 unless indicated by (3) (3) VESD according to IEC61000-4-2, see data sheets. (4) Preliminary data In addition to surviving multiple electrostatic discharge State of the art Infineon TVS diodes have dynamic re- events without degradation, an efficient protection device sistance values down to 0.27 (Figure 2) at all transient must be able to successfully shunt the dangerous ESD current levels, resulting in extremely low and stable clam- current from the downstream equipment being protected. ping voltages with response times far below 1ns. This key Therefore, the clamping behavior of the protection device feature confirms Infineon TVS diodes as the ideal solution has to match to the protected equipment in order to assure for protection of low voltage signal lines in wireless applica- that the current through the protected I/O pins is minimi- tions. zed. Very low dynamic resistance relative to the protected system and very fast response time are two prime charac- Infineon offers a variety of 0201 and 0402 EIA-equivalent teristics that protection devices must provide to accomplish devices designed to protect one or two data lines with a this task. single component. Depending on the diode type, these Figure 2 - TLP plot and dynamic resistance of an Infineon TVS diode compared to ceramic multilayer varistors (MLV). TLP parameters: 50 , 30ns pulse width, 0.6ns pulse rise time. devices are suited to protect exposed pins in applications Because of their small size with underneath electrode pad having signal voltage levels swinging around zero as well design these devices boast true space savings in highly as those lines with unipolar voltage levels. All Infineon TVS populated PCB boards. diodes protect against ESD strikes in both positive and negative directions. Package height is a key element in the design of modern electronic equipment. With only 0.39 mm (0402) and As with other Infineon’s TVS diodes, all these products 0.31mm (0201) thickness these packages are the solution endure multi-ESD strikes without requiring supplementary of preference for many major manufacturers of slim electro- components. In terms of ESD absorption capability these nics. devices are specified to exceed the toughest industry standard IEC61000-4-2 level 4 (see Table 1). TSSLP-2 and TSLP-2 diode packages are ROHS and Halogen-Free compliant. They are suited for all variations Miniature Designs with World’s Smallest TVS Diodes Available in 0201 and 0402 EIA-equivalent packages, these TVS diodes measure just 0.62 x 0.32 mm for TSSLP-2 (thin super-small leadless package) and 1.00 x 0.60 mm for TSLP-2 (thin small leadless package). See Figure 1. of pick-and-place assembly. Features & Benefits Figure 2 - TSSLP-2 and TSLP-2 single line packages. World's Smallest TVS Packages: EIA 0201 and EIA 0402 equivalent. Excellent ESD absorption capability of up to ±30kV contact discharge. Series suitable for protection of two lines with one device. Capacitance range down to 0.2pF typical and 0.4pF maximum. Leakage current down to 0.1nA typ, max 50nA to extend battery's duration. Lowest and stable capacitance for optimal eye pattern by small components in routine operating mode. Infineon quality TVS diodes with leakage currents down to less than 1nA (Table 1) and maximum specified as 50nA (see data Compliance with high speed data transmission require- sheets) represent a significant benefit for battery-powered ments in high frequency applications like USB 3.0, HDMI electronics. 1.3 / 1.4 and also in antenna applications requires the minimization of parasitic capacitance effects along the entire Supply’s Excellence application’s frequency range. As for all Infineon products, all these miniaturized TVSA major issue typical of low capacitance protection devices protection devices come with the same superior quality designed for protection of high frequency interfaces is their level and benefit from the advantages that only a proven drawback high volume system supplier can provide. in ESD clamping performance. Common examples of these products are multilayer varistors (MLV) and polymer suppressors. Further Product information Infineon’s technology overcomes this problem making www.infineon.com/tvsdiodes possible ultralow parasitic capacitance values down to 0.2pF (1MHz) while ensuring very low clamping voltages www.infineon.com/tvs.appnotes (Table 1). Longer battery’s duration AUTHORS: Today’s market, growing towards portable electronics, Eliana Brzozowski demands much less power consumption and extended Product Marketing Manager for TVS Diode Solutions, Infineon AG Germany. battery duration more now than ever before. New electronic design is looking to reduce the leakage current drained Kelly Miller Regional Marketing Manager, Infineon North America Corp . Imprint - August 2010 Published by Infineon Technologies AG, 81726 München, Germany © 2010 Infineon Technologies AG All Rights Reserved. DISCLAIMER The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. INFORMATION For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 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