DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST60; BST61; BST62 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 16 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 FEATURES PINNING • High current (max. 0.5 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector 3 base DESCRIPTION APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. handbook, halfpage 2 DESCRIPTION 3 PNP Darlington transistor in a SOT89 plastic package. NPN complements: BST50, BST51 and BST52. 1 MARKING TYPE NUMBER Bottom view 3 1 MAM326 MARKING CODE BST60 BS1 BST61 BS2 BST62 BS3 1999 Apr 27 2 Fig.1 Simplified outline (SOT89) and symbol. 2 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BST60 − −60 V BST61 − −80 V − −90 V BST60 − −45 V BST61 − −60 V BST62 − −80 V − −5 V BST62 VCES MIN. collector-emitter voltage VBE = 0 VEBO emitter-base voltage IC collector current (DC) − −0.5 A ICM peak collector current − −1.5 A IB base current (DC) − −100 mA Ptot total power dissipation − 1.3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 1999 Apr 27 3 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE UNIT 96 K/W 16 K/W note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector cut-off current BST60 VBE = 0; VCE = −45 V − − −50 nA BST61 VBE = 0; VCE = −60 V − − −50 nA BST62 VBE = 0; VCE = −80 V − − −50 nA IEBO emitter cut-off current IC = 0; VEB = −4 V − − −50 nA hFE DC current gain VCE = −10 V; note 1; see Fig.2 IC = −150 mA 1000 − − IC = −500 mA 2000 − − − − −1.3 V collector-emitter saturation voltage IC = −500 mA; IB = −0.5 mA IC = −500 mA; IB = −0.5 mA; Tj = 150 °C − − −1.3 V VBEsat base-emitter saturation voltage IC = −500 mA; IB = −0.5 mA − − −1.9 V fT transition frequency IC = −500 mA; VCE = −5 V; f = 100 MHz − 200 − MHz VCEsat Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time toff turn-off time ICon = −500 mA; IBon = −0.5 mA; IBoff = 0.5 mA Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 27 4 − 500 − ns − 700 − ns Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 MGD839 6000 handbook, full pagewidth hFE 5000 4000 3000 2000 1000 0 −10−1 −1 −10 −102 VCE = −10 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = 1.8 V; VCC = −10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 27 5 oscilloscope IC (mA) −103 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 27 EUROPEAN PROJECTION ISSUE DATE 97-02-28 6 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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