DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pair. 2 collector TR1 3 emitter TR1 4 emitter TR2 APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors. handbook, halfpage 4 3 2 1 DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. TR1 1 MARKING TYPE NUMBER MARKING CODE TYPE NUMBER Top view MARKING CODE BCV62 3Mp BCV62B 3Kp BCV62A 3Jp BCV62C 3Lp 3 2 TR2 4 MAM292 Fig.1 Simplified outline (SOT143B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage TR1 open emitter − −30 V VCEO collector-emitter voltage TR1 open base − −30 V VEBS emitter-base voltage VCE = 0 − −6 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current TR1 − −200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 Apr 08 2 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −30 V − − −15 nA IE = 0; VCB = −30 V; Tj = 150 °C − − −5 µA nA Transistor TR1 ICBO collector cut-off current IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 hFE DC current gain IC = −100 µA; VCE = −5 V 100 − − IC = −2 mA; VCE = −5 V 100 − 800 collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA − −250 −650 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB =− 0.5 mA; note 1 − −700 − mV IC = −100 mA; IB = −5 mA; note 1 − −850 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V; note 1 −600 −650 −750 mV IC = −10 mA; VCE = −5 V; note 2 − −820 mV VCEsat − Cc collector capacitance IE = ie = 0; VCB = −10 V − 4.5 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB IE = 250 mA; VCB = 0 − − 1.5 V IE = 10 µA; VCB = 0 400 − − mV BCV62A 125 − 250 BCV62B 220 − 475 BCV62C 420 − 800 Transistor TR2 VEBS hFE 1999 Apr 08 base-emitter forward voltage DC current gain IC = −2 mA; VCE = −5 V 3 Philips Semiconductors Product specification PNP general purpose double transistor SYMBOL PARAMETER BCV62 CONDITIONS MIN. TYP. MAX. UNIT 0.7 − 1.3 0.7 − 1.3 − − 5 Transistors TR1 and TR2 I C1 ------I E2 current matching of transistors IE2 = 0.5 mA; VCE1 = −5 V; Tamb ≤ 25 °C TR1 and TR2 IE2 = 0.5 mA; VCE1 = −5 V; Tamb ≤ 150 °C IE2 emitter current for thermal stability of −IC1 VCE1 = −5 V; note 3 ; (see Fig.2) mA Notes 1. Decreasing −1.7 mV/°C with increasing temperature. 2. Decreasing −2 mV/°C with increasing temperature. 3. Device, without emitter resistors, mounted on an FR4 printed-circuit board. handbook, halfpage handbook, halfpage A IC1 −VCE1 2 1 TR1 VCO 4 VCO −VCE1 IE2 = constant TR2 3 A IC1 2 TR1 TR2 3 IE2 A RE MBK081 1 IE2 = constant 4 RE MBK080 VCE1 = -5 V; device, without emitter resistors, mounted on an FR4 printed-circuit board. 2 Voltage drop at contacts: V CO < --- U T = ^ 16 mV . 3 Fig.2 Test circuit current matching. 1999 Apr 08 Fig.3 BCV62 with emitter resistors. 4 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 MBK083 −30 handbook, full pagewidth −VCE1max IE2 = (V) 1 mA −20 5 mA 10 mA −10 50 mA 0 10−1 10 1 RE (Ω) I C1 -------- = 1.3 (see Fig.3). I E2 Fig.4 Maximum collector-emitter voltage as a function of emitter resistance. 1999 Apr 08 5 102 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1999 Apr 08 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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