DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 11 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor PMBT5088 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 30 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Intended for low-noise input stages in audio equipment. DESCRIPTION handbook, halfpage 3 3 NPN transistor in a SOT23 plastic package. 1 MARKING MARKING CODE(1) TYPE NUMBER 1 ∗1Q PMBT5088 Top view Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 35 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 4.5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor PMBT5088 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 20 V − 50 nA emitter cut-off current IC = 0; VEB = 3 V − 50 nA DC current gain IC = 100 µA; VCE = 5 V 300 900 IC = 1 mA; VCE = 5 V 350 − ICBO collector cut-off current IEBO hFE IC = 10 mA; VCE = 5 V 300 − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 500 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA − 800 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 10 pF F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 3 dB 1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistor PMBT5088 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 15 EUROPEAN PROJECTION 4 Philips Semiconductors Product specification NPN general purpose transistor PMBT5088 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 15 5 Philips Semiconductors Product specification NPN general purpose transistor PMBT5088 NOTES 1999 Apr 15 6 Philips Semiconductors Product specification NPN general purpose transistor PMBT5088 NOTES 1999 Apr 15 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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