PHILIPS 2PD601AQW

DISCRETE SEMICONDUCTORS
DATA SHEET
2PD601A series
NPN general purpose transistors;
50 V, 100 mA
Product data sheet
Supersedes data of 2002 Jun 26
2004 Feb 12
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
FEATURES
2PD601A series
QUICK REFERENCE DATA
• Available in SOT323 (SC-70) and SOT346 (SC-59)
packages
SYMBOL
• Available in three different DC current gain versions
(Q, R, S).
APPLICATIONS
PARAMETER
MIN. MAX. UNIT
VCEO
collector-emitter
voltage
−
50
V
IC
collector current (DC)
−
100
mA
hFE
DC current gain
group Q
160
260
group R
210
340
group S
290
460
• General purpose switching and amplification.
DESCRIPTION
NPN general purpose transistors (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
hFE GROUP
SC-59
ZQ
Q
SOT346
SC-59
ZR
R
SOT346
SC-59
ZS
S
2PD601AQW
SOT323
SC-70
*6D
Q
2PD601ARW
SOT323
SC-70
*6E
R
2PD601ASW
SOT323
SC-70
*6F
S
PHILIPS
EIAJ
2PD601AQ
SOT346
2PD601AR
2PD601AS
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
DESCRIPTION
2PD601AQ
1
base
2PD601AR
2
emitter
3
collector
handbook, halfpage
3
2PD601AS
3
2PD601AQW
1
2PD601ARW
2PD601ASW
1
2
2
Top view
2004 Feb 12
MAM321
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
2PD601AQ
DESCRIPTION
VERSION
−
plastic surface mounted package; 3 leads
SOT346
−
plastic surface mounted package; 3 leads
SOT323
2PD601AR
2PD601AS
2PD601AQW
2PD601ARW
2PD601ASW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
Ptot
total power dissipation
SOT346
−
250
mW
SOT323
Tamb ≤ 25 °C; note 1
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
SOT346
500
K/W
SOT323
625
K/W
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
Soldering
Reflow soldering is the only recommended soldering method.
2004 Feb 12
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 60 V
−
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
−
5
μA
nA
IEBO
emitter-base cut-off current
IC = 0; VEB = 5 V
−
10
hFE
DC current gain
IC = 100 mA; VCE = 2 V; note 1
90
−
hFE
DC current gain
IC = 2 mA; VCE = 10 V
group Q
160
260
group R
210
340
group S
290
460
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA; note 1
−
250
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
3
pF
fT
transition frequency
IC = 2 mA; VCE = 10 V;
f = 100 MHz
100
−
MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Feb 12
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
PACKAGE OUTLINES
Plastic surface-mounted package; 3 leads
SOT346
E
D
A
B
X
HE
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
1.9
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
OUTLINE
VERSION
SOT346
2004 Feb 12
REFERENCES
IEC
JEDEC
JEITA
TO-236
SC-59A
5
EUROPEAN
PROJECTION
ISSUE DATE
04-11-11
06-03-16
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2004 Feb 12
REFERENCES
IEC
JEDEC
JEITA
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
2004 Feb 12
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/06/pp8
Date of release: 2004 Feb 12
Document order number: 9397 750 12172