PMSS3906 PNP switching transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMSS3906
PNP switching transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Jan 09
NXP Semiconductors
Product data sheet
PNP switching transistor
PMSS3906
FEATURES
QUICK REFERENCE DATA
• Low current (max. 100 mA)
SYMBOL
• Low voltage (max. 40 V).
VCEO
collector-emitter
voltage
−
−40
V
APPLICATIONS
IC
collector current
−
−100
mA
• Switching, e.g. telephony and professional
communication equipment.
hFE
DC current gain
100
300
PARAMETER
TYP.
MAX.
UNIT
DESCRIPTION
PNP switching transistor in an SOT323 (SC-70) plastic
package. NPN complement: PMSS3904.
PRODUCT OVERVIEW
PACKAGE
MARKING CODE(1)
TYPE NUMBER
PMSS3906
PHILIPS
EIAJ
SOT323
SC-70
06*
NPN COMPLEMENT
PMSS3904
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
PMSS3906
3
handbook, halfpage
3
1
2
1
2
Top view
2004 Jan 09
MAM048
2
DESCRIPTION
1
base
2
emitter
3
collector
NXP Semiconductors
Product data sheet
PNP switching transistor
PMSS3906
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMSS3906
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Transistor mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
notes 1 and 2
VALUE
UNIT
625
K/W
Notes
1. Refer to standard mounting conditions.
2. Transistor mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2004 Jan 09
3
NXP Semiconductors
Product data sheet
PNP switching transistor
PMSS3906
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
−
−50
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−10
µA
−
−50
nA
IC = −0.1 mA
60
−
IC = −1 mA
80
−
IC = −10 mA
100
300
IC = −50 mA; note 1
60
−
IC = −100 mA; note 1
30
−
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA
−
−250
mV
IC = −50 mA; IB = −5 mA; note 1
−
−400
mV
base-emitter saturation voltage
IC = −10 mA; IB = −1 mA
−
−850
mV
IC = −50 mA; IB = −5 mA; note 1
−
−950
mV
emitter-base cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
VCE = −1 V
VBEsat
MAX.
IE = 0; VCB = −30 V
collector-base cut-off current
IEBO
VCEsat
MIN.
Cc
collector capacitance
IE = ie = 0; VCB = −5 V; f = 1 MHz
−
4.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
−
14
pF
fT
transition frequency
IE = −10 mA; VCB = −20 V; f = 100 MHz
150
−
MHz
F
noise figure
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
4
dB
Switching times (between 10% and 90% levels); see Fig.1
ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −
ton
turn-on time
100
ns
td
delay time
−
50
ns
tr
rise time
−
50
ns
toff
turn-off time
−
700
ns
ts
storage time
−
600
ns
tf
fall time
−
100
ns
Note
1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 09
4
NXP Semiconductors
Product data sheet
PNP switching transistor
PMSS3906
VBB
handbook, full pagewidth
RB
oscilloscope
VCC
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = 3 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.1 Test circuit for switching times.
2004 Jan 09
5
oscilloscope
NXP Semiconductors
Product data sheet
PNP switching transistor
PMSS3906
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2004 Jan 09
REFERENCES
IEC
JEDEC
JEITA
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product data sheet
PNP switching transistor
PMSS3906
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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specifications and product descriptions, at any time and
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 09
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/04/pp8
Date of release: 2004 Jan 09
Document order number: 9397 750 12329