IPP881N08N G n-channel Power-Transistor Product Summary Features • for dc-motor drive systems V DS 80 V R DS(on),max 7 mΩ ID 80 A • N-channel, normal level • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type IPP881N08N G Package PG-TO220-3 Marking 881N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 80 T C=100 °C 72 Unit A Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse3) E AS I D=73 A, R GS=25 Ω 150 mJ Gate source voltage V GS ±20 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 See figure 2 for more detailed information 3) See figure 7 for more detailed information 2) Rev. 2.1 page 1 2008-06-19 IPP881N08N G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.1 80 - - Thermal characteristics Thermal resistance, junction - case R thJC K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=75 µA 2 - 3.5 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=73 A - 5.8 7 mΩ V GS=6 V, I D=36 A - 7.4 12.3 - 2920 3880 - 1130 1500 - 60 - - 16 - - 8 - - 41 55 - - 80 - - 320 - 1.0 1.2 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss V GS=0 V, V DS=25 V, f =1 MHz pF Gate Charge Characteristics 4) Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=25 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Rev. 2.1 T C=25 °C V GS=0 V, I F=73 A, T j=25 °C page 2 A V 2008-06-19 IPP881N08N G 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 150 103 limited by on-state resistance 1 µs 10 µs 100 100 µs I D [A] P tot [W] 10 2 1 ms 10 ms 50 101 0 100 0 50 100 150 DC 10-1 200 100 101 102 V DS [V] T C [°C] 3 Typ. output characteristics 4 Typ. transfer characteristics I D=f(V DS); T j=25 °C I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: V GS parameter: T j 320 180 10 V 8V 7V 280 150 240 120 6.5 V I D [A] I D [A] 200 160 6V 90 120 60 5.5 V 80 40 175 °C 30 5V 25 °C 4.5 V 0 0 0 1 2 3 4 5 V DS [V] Rev. 2.1 0 2 4 6 8 V GS [V] page 3 2008-06-19 IPP881N08N G 5 Drain-source on-state resistance 6 Typ. capacitances R DS(on)=f(T j); I D=73 A; V GS=10 V C =f(V DS); V GS=0 V; f =1 MHz 104 12 Ciss 10 Coss 103 typ C [pF] R DS(on) [mΩ] 8 6 102 4 Crss 2 101 0 -60 -20 20 60 100 140 0 180 20 40 T j [°C] 60 80 V DS [V] 7 Avalanche characteristics 8 Drain-source breakdown voltage I AS=f(t AV); R GS=25 Ω V BR(DSS)=f(T j); I D=1 mA parameter: T j(start) 100 90 25 °C 85 80 V BR(DSS) [V] I AV [A] 100 °C 10 150 °C 75 70 65 1 60 0.1 1 10 100 1000 Rev. 2.1 -60 -20 20 60 100 140 180 T j [°C] t AV [µs] page 4 2008-06-19 IPP881N08N G PG-TO220-3 Rev. 2.1 page 5 2008-06-19 IPP881N08N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 6 2008-06-19