BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520; BFG520/X; BFG520/XR PINNING • High power gain PIN • Low noise figure DESCRIPTION fpage 4 3 2 BFG520 (Fig.1) Code: %MF • High transition frequency 1 collector • Gold metallization ensures excellent reliability. 2 base 1 3 emitter Top view 4 emitter DESCRIPTION BFG520/X (Fig.1) Code: %ML NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. 1 collector 2 emitter 3 base 4 emitter The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. MSB014 Fig.1 SOT143B. handbook, 2 columns 3 4 BFG520/XR (Fig.2) Code: %MP 1 collector 2 emitter 3 base 4 emitter 2 1 Top view MSB035 Fig.2 SOT143R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 20 V VCEO collector-emitter voltage open base − − 15 V Ic DC collector current − − 70 mA mW open emitter Ptot total power dissipation up to Ts = 88 °C; note 1 − − 300 hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 °C 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 17 18 − dB F noise figure Γs = Γopt ; Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.1 1.6 dB Γs = Γopt ; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.6 2.1 dB Γs = Γopt ; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 1.9 − dB Rev. 04 - 23 November 2007 2 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to Ts = 88 °C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 88 °C; note 1 THERMAL RESISTANCE 290 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. Rev. 04 - 23 November 2007 3 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ICBO collector cut-off current IE = 0; VCB = 6 V − − 50 UNIT nA hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1 − pF Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 0.6 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain (note 1) IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 17 18 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 1.9 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C − 17 − dBm ITO third order intercept point note 2 − 26 − dBm Vo output voltage note 3 − 275 − mV d2 second order intermodulation distortion IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb = 25 °C; f(p+q) = 810 MHz − −50 − dB Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz Rev. 04 - 23 November 2007 4 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor MRA670-1 400 BFG520; BFG520/X; BFG520/XR MRA671 250 handbook, halfpage handbook, halfpage Ptot (mW) hFE 200 300 150 200 100 100 50 0 0 50 100 150 Ts (oC) 200 0 10−2 10−1 1 10 IC (mA) 102 VCE = 6 V; Tj = 25 °C. Fig.4 Fig.3 Power derating curve. MRA672 0.6 DC current gain as a function of collector current. MRA673 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.4 8 VCE = 6 V VCE = 3 V 0.2 4 0 0 4 8 VCB (V) 12 1 10 IC (mA) 102 f = 1 GHz; Tamb = 25 °C. IC = 0; f = 1 MHz. Fig.5 0 10−1 Feedback capacitance as a function of collector-base voltage. Fig.6 Rev. 04 - 23 November 2007 Transition frequency as a function of collector current. 5 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRA674 25 handbook, halfpage gain (dB) gain (dB) Gmax 20 MSG 20 MRA675 25 handbook, halfpage GUM 15 15 Gmax MSG GUM 10 10 5 5 0 0 0 0 10 20 IC (mA) 10 20 VCE = 6 V; f = 900 MHz; Tamb = 25 °C. 30 IC (mA) 30 VCE = 6 V; f = 2 GHz; Tamb = 25 °C. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of collector current. MRA676 50 MRA677 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM 40 40 GUM MSG 30 30 MSG 20 20 Gmax Gmax 10 0 10 102 103 f (MHz) 10 104 0 10 102 103 f (MHz) 104 IC = 20 mA; VCE = 6 V; Tamb = 25 °C. IC = 5 mA; VCE = 6 V; Tamb = 25 °C. Fig.9 Gain as a function of frequency. Fig.10 Gain as a function of frequency. Rev. 04 - 23 November 2007 6 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor MEA975 −20 dim BFG520; BFG520/X; BFG520/XR MEA974 −20 d2 handbook, halfpage handbook, halfpage (dB) −30 (dB) −30 −40 −40 −50 −50 −60 −60 −70 10 0 20 30 40 −70 50 IC (mA) Fig.11 Intermodulation distortion as a function of collector current. MRA682 5 handbook, halfpage Fmin f = 900 MHz (dB) 4 1000 MHz 10 0 20 30 40 50 IC (mA) Fig.12 Second order intermodulation distortion as a function of collector current. MRA683 20 Gass handbook, halfpage (dB) 15 (dB) 4 5 Fmin IC = 5 mA 20 mA 20 Gass (dB) 15 Gass Gass 2000 MHz 3 10 3 10 5 2 5 2000 MHz 2 1000 MHz 1 Fmin 20 mA 0 900 MHz 1 Fmin 0 5 mA 500 MHz 0 1 10 IC (mA) −5 102 V CE = 6 V; Tamb = 25 °C. 0 102 103 f (MHz) −5 104 VCE = 6 V; Tamb = 25 °C. Fig.13 Minimum noise figure and associated available gain as functions of collector current. Fig.14 Minimum noise figure and associated available gain as functions of frequency. Rev. 04 - 23 November 2007 7 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor handbook, full pagewidth BFG520; BFG520/X; BFG520/XR stability circle 90° 1.0 1 135° 0.8 45° 2 0.5 pot. unst. region 0.6 Fmin = 1. 1 dB 0.2 0.4 5 ΓOPT 180° 0.2 0 0.5 1 0.2 2 5 0° F = 1.5 dB 0 F = 2 dB 5 0.2 F = 3 dB 0.5 −135° 2 −45° 1 MRA684 1.0 −90° IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo = 50 Ω. Fig.15 Noise circle figure. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 F = 3 dB F = 2.5 dB F = 2 dB ΓOPT 0.2 Gmax = 13 dB 180° 0 0.4 5 0.2 Fmin = 1. 9 dB ΓMS 0.2 0.5 1 2 5 0° 0 G = 12 dB 0.2 G = 11 dB 5 G = 10 dB −135° 0.5 2 −45° 1 MRA685 1.0 −90° IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 Ω. Fig.16 Noise circle figure. Rev. 04 - 23 November 2007 8 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 −135° 2 −45° 1 MRA678 1.0 −90° IC = 20 mA; VCE = 6 V. Zo = 50 Ω. Fig.17 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRA679 IC = 20 mA; VCE = 6 V. Fig.18 Common emitter forward transmission coefficient (S21). Rev. 04 - 23 November 2007 9 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.25 0.20 0.15 0.10 0° 0.05 −135° −45° −90° MRA680 IC = 20 mA; VCE = 6 V. Fig.19 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 3 GHz 0.2 −135° 0.5 5 2 −45° 1 MRA681 1.0 −90° IC = 20 mA; VCE = 6 V. Zo = 50 Ω. Fig.20 Common emitter output reflection coefficient (S22). Rev. 04 - 23 November 2007 10 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 04 - 23 November 2007 11 of 14 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-10 SOT143R Rev. 04 - 23 November 2007 12 of 14 NXP Semiconductors BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 23 November 2007 13 of 14 BFG520; BFG520/X; BFG520/XR NXP Semiconductors NPN 9 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG520XR_N_4 20071123 Product data sheet - BFG520XR_CNV_3 • Modifications: Pinning table on page 2; changed code BFG520XR_CNV_3 19950901 Product specification - BFG520XR_2 BFG520XR_2 - Product specification - BFG520XR_1 BFG520XR_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 November 2007 Document identifier: BFG520XR_N_4