DISCRETE SEMICONDUCTORS DATA SHEET BFR92AW NPN 5 GHz wideband transistor Product specification Supersedes data of October 1992 File under discrete semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. handbook, 2 columns PINNING APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. PIN DESCRIPTION 1 base 2 emitter 3 collector 3 1 2 Top view MBC870 Marking code: P2. Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC collector current (DC) − − 25 mA Ptot total power dissipation − − 300 mW up to Ts = 93 °C; note 1 hFE current gain IC = 15 mA; VCE = 10 V 40 90 − Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C − 14 − dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C − 8 − dB IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt − 2 − dB − − 150 °C F noise figure Tj junction temperature Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 18 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 25 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 93 °C; see Fig.2; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 93 °C; note 1 Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. MLB540 400 P tot (mW) 300 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve 1995 Sep 18 3 VALUE UNIT 190 K/W Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 10 V − − 50 hFE DC current gain IC = 15 mA; VCE = 10 V 40 90 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.6 − pF nA Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C − 14 − dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C − 8 − dB IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt − 2 − dB IC = 5 mA; VCE = 10 V; f = 2 GHz; Γs = Γopt − 3 − dB F noise figure Note s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -----------------------------------------------------------dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) 1995 Sep 18 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MCD074 120 MGC883 1.0 handbook, halfpage C re (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 I C (mA) 0 30 VCE = 10 V. Fig.3 4 8 12 16 20 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 MGC884 6 handbook, halfpage fT (GHz) 4 2 0 1 10 I C (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 1995 Sep 18 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC885 30 MGC886 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 20 GUM MSG GUM 10 10 0 0 5 15 10 0 20 0 5 15 10 I C (mA) VCE = 10 V; f = 500 MHz. Fig.6 VCE = 10 V; f = 1 GHz. Gain as a function of collector current; typical values. Fig.7 MGC887 50 Gain as a function of collector current; typical values. MGC888 50 handbook, halfpage handbook, halfpage gain (dB) 20 I C (mA) gain GUM (dB) GUM 40 40 MSG 30 MSG 30 20 20 10 10 Gmax Gmax 0 0 102 10 103 f (MHz) 104 VCE = 10 V; IC = 5 mA. Fig.8 1995 Sep 18 102 10 103 f (MHz) 104 VCE = 10 V; IC = 15 mA. Gain as a function of frequency; typical values. Fig.9 6 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC889 6 MGC890 6 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 4 4 IC = 15 mA 1 GHz 10 mA 500 MHz 5 mA 2 2 0 1 10 I C (mA) 0 102 10 2 VCE = 10 V. 103 f (MHz) VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 90 o 1.0 handbook, full pagewidth 1 F = 4 dB 135 o 0.5 F = 3 dB 2 45 o 0.8 0.6 F = 2 dB 0.2 180 o 0.2 0 0.4 5 0.5 1 0.2 F min = 1.6 dB Γ opt 2 5 0o 0 5 0.2 0.5 2 135 o 45 o 1 MGC891 90 o f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. Fig.12 Common emitter noise figure circles; typical values. 1995 Sep 18 104 7 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 (4) (2) (3) 0.2 (5) 180 o (1) (6) 0.2 0 0.4 5 0.5 1 0.2 2 5 0o 0 (7) (1) (2) (3) (4) (5) (6) (7) (8) (8) 0.2 Γopt; Fmin = 2.1 dB. F = 2.5 dB. F = 3 dB. F = 4 dB. Γms; Gmax = 15.7 dB. G = 15 dB. G = 14 dB. G = 13 dB. 5 0.5 2 135 o 45 o 1 MGC892 1.0 90 o f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. Fig.13 Common emitter noise figure circles; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 (4) 0.6 (3) (2) 0.2 0.4 5 0.2 (1) 180 o 0.2 0 0.5 1 2 5 0o (5) 0.2 (1) Γopt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) Γms; Gmax = 9.1 dB. (6) G = 8 dB. (7) G = 7 dB. (8) G = 6 dB. f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. 5 (6) (7) (8) 0.5 2 135 o 45 o 1 MGC893 90 o Fig.14 Common emitter noise figure circles; typical values. 1995 Sep 18 0 8 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 180 o 0.2 0 0.5 0.2 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC894 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 50 40 135 30 20 3 GHz 0o 10 o 45 90 o o MGC895 VCE = 10 V; IC = 15 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 18 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MGC896 VCE = 10 V; IC = 15 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MGC897 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 18 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW PACKAGE OUTLINE 1.00 max handbook, full pagewidth 0.2 M A 0.2 M B 0.1 max 0.4 0.2 0.2 A 3 2.2 2.0 1.35 1.15 1 2 0.3 0.1 1.4 1.2 0.25 0.10 2.2 1.8 B Dimensions in mm. Fig.19 SOT323. 1995 Sep 18 11 MBC871 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 18 12 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 708 296 8556 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 615 800, Fax. +358 615 80920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 52 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. +30 1 4894 339/911, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 648 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 83749, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 926 5361, Fax. +7 095 564 8323 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com/ps/ (1) CGY2020G_1.mif June 26, 1996 11:51 am © Philips Electronics N.V. 1996 SCA50 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 647021/1200/01/pp12 Date of release: 1996 Jul 17 Document order number: 9397 750 00971