BFQ149 PNP 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analysers, etc., using SMD technology. PIN DESCRIPTION Code: FG 1 emitter 2 collector 3 base 3 2 1 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO collector-emitter voltage IC DC collector current CONDITIONS open base MIN. TYP. MAX. UNIT − − −15 V − − −100 mA − W Ptot total power dissipation up to Ts = 135 °C (note 1) − 1 hFE DC current gain IC = −70 mA; VCE = −10 V; Tj = 25 °C 20 50 − fT transition frequency IC = −75 mA; VCE = −10 V; f = 500 MHz; Tj = 25 °C 4 5 − GHz GUM maximum unilateral power gain IC = −50 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 12 − dB F noise figure IC = −50 mA; VCE = −10 V; Rs = 60 Ω; f = 500 MHz; Tamb = 25 °C − 3.75 − dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −3 V IC DC collector current − −100 mA ICM peak collector current f > 1 MHz − −150 mA up to Ts = 135 °C (note 1) Ptot total power dissipation − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the collector tab. Rev. 03 - 28 September 2007 2 of 7 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFQ149 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 135 °C (note 1) 40 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current IE = 0; VCB = −10 V; MIN. TYP. MAX. − − 100 UNIT nA hFE DC current gain IC = −70 mA; VCE = −10 V 20 50 − fT transition frequency IC = −70 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C 4 5 − GHz Cc collector capacitance IE = 0; VCB = −10 V; f = 1 MHz − 2 − pF Ce emitter capacitance IC = 0; VEB = −0.5 V; f = 1 MHz − 4 − pF Cre feedback capacitance IC = 0; VCE = −10 V; f = 1 MHz − 1.7 − pF GUM maximum unilateral power gain (note 1) IC = −50 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 12 − dB F noise figure IC = −50 mA; VCE = −10 V; Rs = 60 Ω; f = 500 MHz; Tamb = 25 °C − 3.75 − dB Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 Rev. 03 - 28 September 2007 3 of 7 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFQ149 MEA328 4 MBB347 8 handbook, halfpage handbook, halfpage fT (GHz) Cc (pF) 3 6 2 4 1 2 0 0 0 10 V CB (V) 0 20 50 IE = 0; f = 1 MHz; Tj = 25 °C. VCE = −10 V; f = 500 MHz; Tamb = 25 °C. Fig.2 Fig.3 Collector capacitance as a function of collector-base voltage. Transition frequency as a function of collector current. MBB345 80 100 I C (mA) MEA329 40 handbook, halfpage handbook, halfpage G UM h FE (dB) 60 30 40 20 20 10 0 100 0 I C (mA) 200 0 10 10 2 VCE = −10 V; Tj = 25 °C. Ic = −50 mA; VCE = −10 V; Tamb = 25 °C. Fig.4 Fig.5 DC current gain as a function of collector current. Rev. 03 - 28 September 2007 103 f (MHz) 10 4 Maximum unilateral power gain as a function of frequency. 4 of 7 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFQ149 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC JEITA TO-243 SC-62 Rev. 03 - 28 September 2007 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 5 of 7 BFQ149 NXP Semiconductors PNP 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 03 - 28 September 2007 6 of 7 BFQ149 NXP Semiconductors PNP 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFQ149_N_3 20070928 Product data sheet - BFQ149_CNV_2 - - Modifications: BFQ149_CNV_2 • Fig. 1 and package outline updated 19950901 Product specification Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 September 2007 Document identifier: BFQ149_N_3