DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Nov 04 2004 Apr 15 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ FEATURES PEMD10; PUMD10 QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplifies circuit design VCEO TYP. MAX. UNIT collector-emitter voltage − 50 V IO output current (DC) − 100 mA TR1 NPN − − − APPLICATIONS TR2 PNP − − − • Low current peripheral driver R1 bias resistor 2.2 − kΩ • Replacement of general purpose transistors in digital applications R2 bias resistor 47 − kΩ • Reduces component count • Reduces pick and place costs. PARAMETER • Control of IC inputs. DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PEMD10 PUMD10 PNP/PNP COMPLEMENT MARKING CODE EIAJ − SOT666 SOT363 SC-88 NPN/NPN COMPLEMENT D1 PEMB10 PEMH10 D*0(1) PUMB10 PUMH10 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PEMD10; PUMD10 handbook, halfpage 6 6 5 5 4 4 R1 R2 TR2 TR1 R2 1 2 3 1 Top view 2004 Apr 15 R1 MAM448 2 2 3 DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMD10; PUMD10 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PEMD10 − plastic surface mounted package; 6 leads SOT666 PUMD10 − plastic surface mounted package; 6 leads SOT363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage TR1 positive − +12 V negative − −5 V positive − +5 V negative − −12 V VI input voltage TR2 IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; − − SOT363 note 1 − 200 mW SOT666 notes 1 and 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot Tamb ≤ 25 °C; − − SOT363 note 1 − 300 mW SOT666 notes 1 and 2 − 300 mW total power dissipation Notes 1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2004 Apr 15 3 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMD10; PUMD10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth(j-a) thermal resistance from junction to ambient SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W SOT363 note 1 416 K/W SOT666 notes 1 and 2 416 K/W Per device Rth(j-a) thermal resistance from junction to ambient Notes 1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2004 Apr 15 4 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMD10; PUMD10 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 50 V; IE = 0 A − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 1 μA VCE = 30 V; IB = 0 A; Tj = 150 °C − − 50 μA μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 180 hFE DC current gain VCE = 5 V; IC = 10 mA 100 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV Vi(off) input-off voltage VCE = 5 V; IC = 100 μA − 0.6 0.5 V Vi(on) input-on voltage VCE = 0.3 V; IC = 5 mA 1.1 0.75 − V R1 input resistor 1.54 2.2 2.86 kΩ R2 -------R1 resistor ratio 17 21 26 Cc collector capacitance − − 2.5 pF − − 3 pF TR1 (NPN) VCB = 10 V; IE = ie = 0 A; f = 1 MHz TR2 (PNP) 2004 Apr 15 5 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMD10; PUMD10 PACKAGE OUTLINES Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 04-11-08 06-03-16 SOT666 2004 Apr 15 EUROPEAN PROJECTION 6 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMD10; PUMD10 Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2004 Apr 15 REFERENCES IEC JEDEC JEITA SC-88 7 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMD10; PUMD10 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Apr 15 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp9 Date of release: 2004 Apr 15 Document order number: 9397 750 13097