PD -20353D 22GQ100 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30A, 100V Major Ratings and Characteristics Characteristics 22GQ100 Description/Features The 22GQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. Units IIF(AV) Rectangular waveform VRRM 30 A 100 V IFSM @ tp = 8.3ms half-sine 400 A VF @ 30Apk, TJ =125°C 0.90 V TJ, Tstg Operating and storage -55 to 150 °C • Hermetically Sealed • High Frequency Operation • Guard Ring for Enhanced Ruggedness and Long Term Reliability • Schottky Diodes Connected in Series • Electrically Isolated 0.12 [.005] CASE STYLE 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665] 3X 3.81 [.150] 2X B 13.84 [.545] 13.59 [.535] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A (ISOLATED BASE) NOTES : 1. 2. 3. 4. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994. AL L DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONT ROL LING DIMENS ION: INCH. CONF ORMS TO JEDE C OUTLINE T O-254AA. 1 CATHODE 2 3 ANODE IR Case Style TO-254AA www.irf.com 1 02/22/02 22GQ100 Voltage Ratings Part number VR 22GQ100 Max. DC Reverse Voltage (V) 100 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current Limits Units 30 A 50% duty cycle @ TC = 100°C, rectangular waveform Conditions 400 A @ tp = 8.3 ms half-sine See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current Electrical Specifications Parameters V FM I RM Limits Units Max. Forward Voltage Drop 1.1 V @ 20A See Fig. 1Q 1.6 V @ 35A 0.9 V @ 20A 1.3 V @ 35A Max. Reverse Leakage Current 0.8 mA TJ = 25°C See Fig. 2 Q 45 mA TJ = 125°C VR = 5VDC ( 1MHz, 25°C ) CT Max. Junction Capacitance 1400 pF LS Typical Series Inductance 7.8 nH Conditions TJ = 25°C TJ =1 25°C VR = rated VR Measured from anode lead to cathode lead 6mm ( 0.025 in.) from package Thermal-Mechanical Specifications Parameters Limits Units TJ Max.Junction Temperature Range -55 to 150 Tstg Max. Storage Temperature Range -55 to 150 °C 1.0 °C/W RthJC Max. Thermal Resistance, Junction Conditions °C DC operation See Fig. 4 to Case wt Weight (Typical) Die Size Case Style 9.3 g 200X200 mils TO-254AA Q Pulse Width < 300µs, Duty Cycle < 2% 2 www.irf.com 22GQ100 100 T = 1 50°C J 125°C 10 100°C 1 0.1 0.01 25°C 0.001 A 0.0001 0 20 40 60 R ev e rse V o lta g e - V 80 R 100 (V ) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage Fig. 1 - Max. Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 22GQ100 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 22GQ100 RthJC (DC) = 1.0°C/W Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 4 www.irf.com