IRF IRHLG770Z4

PD-95865
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
IRHLG770Z4
60V, Quad N-CHANNEL
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG770Z4 100K Rads (Si)
0.6Ω 1.07A
IRHLG730Z4 300K Rads (Si)
0.6Ω 1.07A
MO-036AB
International Rectifier’s R7 TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Complimentary P-Channel Available IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.07
0.67
4.28
1.0
0.01
±10
13
1.07
0.1
7.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
12/28/06
IRHLG770Z4
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
60
—
—
V
VGS = 0V, ID = 250µA
—
0.08
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.6
Ω
VGS = 4.5V, ID = 0.67A
1.0
—
0.9
—
—
—
-4.04
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
VDS = VGS, ID = 250µA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
2.5
0.5
1.6
6.0
2.4
34
11
—
µA
nA
nC
ns
nH
Ã
VDS = 10V, IDS = 0.67A Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.07A
VDS = 30V
VDD = 30V, ID = 1.07A,
VGS = 5.0V, RG = 24Ω
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
162
39
2.1
Gate Resistance
—
13.8
—
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.07
4.28
1.2
51
70
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.07A, VGS = 0V Ã
Tj = 25°C, IF = 1.07A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLG770Z4
IRHLG770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036)
„
Diode Forward Voltage
Units
Test Conditions
V
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
1.0
µA
—
0.5
Ω
VGS = 4.5V, ID = 0.67A
—
0.6
Ω
VGS = 4.5V, ID = 0.67A
—
1.2
V
VGS = 0V, ID = 1.07A
nA
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy
Range
(MeV/(mg/cm ))
(MeV)
(µm)
0V
-2V
-4V
-5V
-6V
-7V
-8V
-10V
Br
37
305
39
60
60
60
60
60
35
30
20
I
60
370
34
60
60
60
60
60
20
15
-
Au
84
390
30
60
60
60
60
-
-
-
-
VDS
2
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
70
60
50
40
30
20
10
0
Br
I
Au
0
-2
-4
-6
-8
-10
-12
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLG770Z4
Pre-Irradiation
10
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
10
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
1
10
60µs PULSE WIDTH
Tj = 150°C
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
1
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
15
0.1
ID = 1.07A
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.5
3
3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.5V
1
0.1
0.1
0.1
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHLG770Z4
80
2.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Pre-Irradiation
70
60
2.0
1.5
1.0
ID = 50µA
ID = 250µA
ID = 1.0mA
0.5
ID = 150mA
0.0
50
-60 -40 -20
0
20
40
60
-60 -40 -20
80 100 120 140 160
Fig 5. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
ID = 1.07A
Ciss
160
Coss
120
80
40
60
80 100 120 140 160
12
C oss = C ds + C gd
200
40
Fig 6. Typical Threshold Voltage Vs
Temperature
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
240
20
T J , Temperature ( °C )
T J , Temperature ( °C )
280
0
Crss
0
10
VDS = 48V
VDS = 30V
VDS = 12V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 15
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
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100
0
0.5
1
1.5
2
2.5
3
3.5
4
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
IRHLG770Z4
Pre-Irradiation
1.2
10
ID, Drain-to-Source Current (A)
ID, Drain Current (A)
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
1
1ms
0.1
150
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
10
100
T C , Case Temperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Safe Operating Area
Thermal Response ( Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
1
P DM
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
t1
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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Pre-Irradiation
IRHLG770Z4
32
EAS , Single Pulse Avalanche Energy (mJ)
ISD, Reverse Drain Current (A)
10
1
T J = 150°C
T J = 25°C
0.1
VGS = 0V
0.01
28
TOP
24
BOTTOM
ID
0.48A
0.68A
1.07A
20
16
12
8
4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
VSD , Source-to-Drain Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13a. Maximum Avalanche Energy
Vs. Drain Current
Fig 12. Typical Source-to-Drain Diode
Forward Voltage
V(BR)DSS
tp
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 13b. Unclamped Inductive Test Circuit
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A
I AS
Fig 13c. Unclamped Inductive Waveforms
7
IRHLG770Z4
Pre-Irradiation
RD
VDS
VDS
90%
VGS
D.U.T.
RG
VDD
+
-
.
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 14a. Switching Time Test Circuit
10%
VGS
td(on)
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
QGS
12V
.3µF
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
Fig 15a. Basic Gate Charge Waveform
8
50KΩ
.2µF
IG
ID
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
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Pre-Irradiation
IRHLG770Z4
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 22.5mH
Peak IL = 1.07A, VGS = 10V
 ISD ≤ 1.07A, di/dt ≤ 214A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — MO-036AB
Q4
Q1
Q3
Q4
Q3
Q1
Q2
Q2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2006
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9