IRF IRHNM597110

PD-97179A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
IRHNM597110
100V, P-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number
Radiation Level RDS(on) ID
IRHNM597110 100K Rads (Si)
1.2Ω
-3.1A
IRHNM593110 300K Rads (Si) 1.2Ω
-3.1A
SMD-0.2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID@ VGS = -12V, TC = 25°C
ID@ VGS = -12V, TC =100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
-3.1
-2.0
-12.4
23
0.18
±20
28
-3.1
2.3
-21
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
For footnotes refer to the last page
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1
12/20/07
IRHNM597110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
∆BV DSS /∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
—
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
1.9
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
—
—
V
-0.13
—
V/°C
—
1.2
Ω
—
4.88
—
—
—
-4.0
—
—
-10
-25
V
mV/°C
S
nA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
11
3.0
4.0
18
26
12
12
—
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
379
98
9.5
—
—
—
Rg
Gate Resistance
VGS = -12V, ID = -2.0A Ã
VDS = VGS, ID = -1.0mA
nC
V DS = -15V, IDS = -2.0A Ã
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -3.1A
VDS = -50V
ns
VDD = -50V, ID = -3.1A,
VGS = -12V, RG = 7.5Ω
µA
nH
pF
Ω
24
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-3.1
-12.4
-5.0
100
271
Test Conditions
A
V
ns
nC
T j = 25°C, IS = -3.1A, VGS = 0V Ã
Tj = 25°C, IF = -3.1A, di/dt ≤ -100A/µs
VDD ≤ -50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
5.4
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNM597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (SMD-0.2)
Diode Forward Voltage Ã
300KRads(Si)2
Min
Max
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.916
-100
-2.0
—
—
—
—
—
1.2
—
—
-5.0
—
—
-4.0
-100
100
-10
0.936
Units
Test Conditions
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS= -80V, VGS = 0V
VGS = -12V, ID = -2.0A
1.2
Ω
VGS = -12V, ID = -2.0A
-5.0
V
VGS = 0V, IS = -3.1A
V
nA
1. Part number IRHNM597110
2. Part number IRHNM593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
5V
10V
15V
17.5V
20V
37.3
285
36.8
-100
-100
-100
-100
-100
-100
I
Au
59.9
82.3
344
351
32.7
28.5
-100
-100
-100
-100
-100
-100
-100
-30
-75
-
-25
-
VDS
Br
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNM597110
Pre-Irradiation
100
VGS
TOP
-15V
-12V
-10V
-8.0V
-6.0V
-5.0V
-4.5V
BOTTOM -4.0V
10
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
-4.0V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
10
BOTTOM
20µs PULSE WIDTH
Tj = 150°C
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
(Normalized)
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
100
-I D, Drain-to-Source Current (A)
-4.0V
1
0.1
0.1
10
T J = 150°C
VDS = -50V
15
20µs PULSE
WIDTH
ID = -3.1A
2.0
1.5
1.0
0.5
VGS = -12V
0.0
1
4
6
8
10
12
14
16
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-5.0V
-4.5V
-4.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHNM597110
7
ID = -3.1A
6
5
T J = 150°C
4
3
2
1
T J = 25°C
0
4
6
8
10
12
14
4
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance ( Ω)
Pre-Irradiation
T J = 150°C
3
2
T J = 25°C
1
Vgs = -12V
0
16
0
2
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
6
Fig 6. Typical On-Resistance Vs
Drain Current
4
150
ID = -1.0mA
-V GS(th) Gate threshold Voltage (V)
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
4
-I D, Drain Current (A)
140
130
120
110
3
2
1
ID = -50µA
ID = -250µA
ID = -1.0mA
ID = -150mA
0
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHNM597110
600
Pre-Irradiation
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
500
C, Capacitance (pF)
C oss = C ds + C gd
400
Ciss
300
Coss
200
100
Crss
0
VDS= -80V
VDS= -50V
VDS= -20V
ID = -3.1A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 17
0
1
10
100
0
2
4
6
8
10
12
QG, Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
3.5
100
-I SD , Reverse Drain Current (A)
3
-I D, Drain Current (A)
10
1
TJ = 150°C
T J = 25°C
0.1
2
1.5
1
0.5
VGS = 0V
0.01
0
0
1
2
3
4
5
-V SD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
2.5
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHNM597110
50
EAS , Single Pulse Avalanche Energy (mJ)
-ID, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1
1ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
ID
-1.4A
-2.0A
BOTTOM -3.1A
TOP
40
30
20
10
0
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
D = 0.50
0.20
0.10
1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
( THERMAL RESPONSE )
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHNM597110
Pre-Irradiation
I AS
L
VDS
-
D.U.T
RG
+
VGS
-20V
IAS
tp
VVDD
DD
A
DRIVER
0.01Ω
tp
15V
V(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
+VDS
D.U.T.
VGS
VG
-3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
V DS
V GS
RG
Fig 17b. Gate Charge Test Circuit
RD
td(on)
tr
t d(off)
tf
VGS
D.U.T.
10%
-
+
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
ID
Current Sampling Resistors
V DD
90%
VDS
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHNM597110
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -50V, starting TJ = 25°C, L=5.8 mH
Peak IL = -3.1A, VGS = -12V
 ISD ≤ -3.1A, di/dt ≤ -544A/µs,
VDD ≤ -100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.2
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
PAD ASSIGNMENT
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2007
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9