IRF 200MT40KB

Bulletin I27129 rev. C 05/03
200MT40KB
THREE PHASE BRIDGE
Power Module
Features
Package fully compatible with the industry standard INT-Apak power modules series
High thermal conductivity package, electrically insulated case
Low power loss
200 A
Excellent power volume ratio, outline for easy connections to
power transistor and IGBT modules
4000 VRMS isolating voltage
UL E78996 approved
Description
It extents the existing range of MT...KB bridges an
extremely compact, encapsulated three phase bridge
rectifiers offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications.
Major Ratings and Characteristics
Parameters
IO
@ TC
200MT40KB
Units
200
A
85
°C
IFSM @ 50Hz
1800
A
@ 60Hz
1880
@ 50Hz
16.2
@ 60Hz
14.7
2
I t
KA2s
I2√t
162
KA2√s
VRRM
400
V
TSTG range
- 40 to 150
°C
TJ
- 40 to 150
range
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200MT40KB
Bulletin I27129 rev. C 05/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM, maximum
VRSM, maximum
IRRM max.
repetitive peak
reverse voltage
V
non-repetitive peak
reverse voltage
V
@ TJ = 150°C
400
500
6
200MT40KB
mA
Forward Conduction
Parameter
200MT40KB
Units Conditions
IO
Maximum RMS output current
200
A
120° Rect conduction angle
ITSM
@ Case temperature
Maximum peak, one-cycle
85
1800
°C
A
t = 10ms
forward, non-repetitive
1880
t = 8.3ms
reapplied
on state surge current
1520
t = 10ms
100% VRRM
1590
I2t
I2√t
Maximum I2 t for fusing
No voltage
t = 8.3ms
reapplied
t = 10ms
t = 8.3ms
No voltage
reapplied
11.6
t = 10ms
100% VRRM
12.6
t = 8.3ms
reapplied
16.2
14.7
Maximum I2√t for fusing
162
KA2s
Initial
TJ = TJ max.
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO) Value of threshold voltage
0.76
V
rt
Slope resistance
2.4
mΩ
@ TJ max.
VFM
Maximum forward voltage drop
1.40
V
Ipk = 200A, TJ = 25°C, tp = 400µs single junction
VINS
Insulation voltage
4000
V
TJ = 25oC all terminal shorted, f = 50Hz, t = 1s
Thermal and Mechanical Specifications
Parameter
TJ
Maximum junction operating
200MT40KB
Units Conditions
- 40 to 150
°C
-40 to 150
°C
0.12
K/W
temperature range
Tstg
Maximum storage temperature
range
RthJC
Maximum thermal resistance,
junction to case
0.69
DC operation per junction
0.14
120° Rect condunction angle per module
0.82
RthCS Maximum thermal resistance,
120° Rect condunction angle per junction
0.033
K/W
4 to 6
Nm
176
g
case to heatsink
T
Mounting torque ± 10%
to heatsink
wt
2
Approximate weight
DC operation per module
Per module.
Mounting surface smooth, flat and greased.
Heatsink compound thermal conductivity = 0.42W/mK
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
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200MT40KB
Bulletin I27129 rev. C 05/03
Ordering Information Table
Device Code
20
0
MT
40
1
2
3
4
K
B
5
1
-
Current rating code: 20 = 200 A (Avg)
2
-
Three phase diodes bridge
3
-
Essential part number
4
-
Voltage code: Code x 10 = VRRM (40 = 400V)
5
-
Generation II
Outline Table (without optional barriers)
D
A
B
C
E
F
All dimensions in millimeters (inches)
NOTE: To order the Optional Hardware see Bulletin I27900
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3
200MT40KB
Bulletin I27129 rev. C 05/03
Outline Table (with optional barriers)
D
A
B
C
E
F
140
1000
130
120
110
120˚
(Rect)
100
90
80
70
60 80 100 120 140 160 180 200 220
Total Output Current (A)
Fig. 1 - Current Rating Characteristics
4
Instantaneous On-state Current (A)
Maximum Allowable Case Temperature (°C)
All dimensions in millimeters (inches)
100
Tj = 25˚C
10
Tj = 150˚C
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 2 - On-state Voltage Drop Characteristics
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200MT40KB
1600
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Bulletin I27129 rev. C 05/03
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1200
1000
800
600
Per Junction
400
1
10
2000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1600
Initial T j = 150˚C
No Voltage Reapplied
1400
Rated V rrm Reapplied
1800
1200
1000
800
600
400
200
Per Junction
0
0.01
100
0.1
1
10
Pulse Train Duration(s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 3 - Maximum Non-Repetitive Surge Current
Fig. 4 - Maximum Non-Repetitive Surge Current
5
02
0.
=
A
hS
Rt
W
K/
05
0.
0.
1
400
a
elt
-D
R
0.2
K/
W
0.3
K/W
120˚
(Rect)
300
K/
W
W
K/
Maximum Total Power Loss (W)
500
0.5
K/W
200
1 K/W
100
Tj = 125˚C
0
0
40
80
120
160
Total Output Current (A)
0
200
30
60
90
120
150
Maximum Allowable Ambient Temperature (°C)
Transient Thermal Impedance Z thJC (K/W)
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
10
Steady State Value
RthJC per junction = 0.69 K/W
DC Operation)
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Thermal Impedance Z thJC Characteristics
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200MT40KB
Bulletin I27129 rev. C 05/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/03
6
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