VS-200MT40KPbF www.vishay.com Vishay Semiconductors Three Phase Bridge (Power Module), 200 A FEATURES • Package fully compatible with the industry standard INT-A-PAK power modules series • High thermal conductivity package, electrically insulated case • Low power loss • Excellent power volume ratio, outline for easy connections to power transistor and IGBT modules • 4000 VRMS isolating voltage • UL E78996 approved MT-K • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IO 200 A DESCRIPTION VRRM 400 V Package MT-K Circuit Three phase bridge It extends the existing range of MT...KB bridges an extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t CHARACTERISTICS TC VALUES UNITS 200 A 85 °C 50 Hz 1800 60 Hz 1880 50 Hz 16.2 60 Hz 14.7 A kA2s I2t 162 kA2s VRRM 400 V -40 to 150 °C VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = 150 °C mA 400 500 6 TStg TJ Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-200MT40KPbF Revision: 27-Feb-14 Document Number: 94355 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-200MT40KPbF www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum RMS output current at case temperature IO TEST CONDITIONS 120° rect. conduction angle t = 10 ms Maximum peak, one-cycle forward. non-repetitive on state surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Value of threshold voltage Slope resistance I2t VF(TO) rt VALUES UNITS 200 A 85 °C No voltage reapplied 1800 100 % VRRM reapplied 1520 No voltage reapplied 1880 Initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied TJ maximum A 1590 16.2 14.7 11.6 kA2s 12.6 162 kA2s 0.76 V 2.4 m Maximum forward voltage drop VFM Ipk = 200 A, TJ = 25 °C, tp = 400 μs single junction 1.40 Isolation voltage VISOL TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg DC operation per module Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % to heatsink Approximate weight RthJC RthCS VALUES UNITS -40 to 150 °C 0.12 DC operation per junction 0.69 120° rect. conduction angle per module 0.14 120° rect. conduction angle per junction 0.82 Mounting surface smooth, flat and greased. Heatsink compund thermal conductivity = 0.42 W/mK 0.033 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. K/W 4 to 6 Nm 176 g Revision: 27-Feb-14 Document Number: 94355 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-200MT40KPbF www.vishay.com Vishay Semiconductors Instantaneous On-State Current (A) Maximum Allowable Case Temperature (°C) 140 130 120 120° (Rect) 110 100 90 80 70 60 80 100 120 140 160 180 200 1600 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 ˚C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1400 1200 1000 800 600 Per junction 400 220 1 10 Instantaneous On-State Voltage (V) Fig. 1 - Current Rating Characteristics Fig. 3 - Maximum Non-Repetitve Surge Current 1000 2000 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 150 ˚C No voltage reapplied Rated VRRM reapplied Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current 1800 100 TJ = 25 °C 10 TJ = 150 °C 1600 1400 1200 1000 800 600 400 200 1 0.5 Per junction 0 1.0 1.5 2.0 2.5 0.01 3.0 0.1 1.0 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 2 - On-State Voltage Drop Characteristics Fig. 4 - Maximum Non-Repetitive Surge Current 500 Maximum Total Power Loss (W) 500 Maximum Total Power Loss (W) 100 Total Output Current (A) 400 120° (Rect) 300 200 100 TJ = 125 °C 0 R 0. 05 400 0. 1 th SA K/ W = 0. 02 5 K/ W 0.2 300 200 W K/W 0.3 K/ -Δ R K/W 0.5 K/W 1.0 K 100 /W 0 0 40 80 120 160 Total Output Current (A) 200 0 30 60 90 120 150 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink) Revision: 27-Feb-14 Document Number: 94355 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-200MT40KPbF ZthJC - Transient Thermal Impedance (K/W) www.vishay.com Vishay Semiconductors 10 Steady state value RthJC per junction = 0.69 K/W (DC operation) 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 20 0 MT 40 1 2 3 4 5 K PbF 6 1 - Vishay Semiconductors product 2 - Current rating code: 20 = 200 A (average) 3 - Three phase diodes bridge 4 5 - Essential part number Voltage code x 10 = VRRM (40 = 400 V) 6 - PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION + D A B ~ C - E F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95004 Revision: 27-Feb-14 Document Number: 94355 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTK (with and without optional barrier) DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 8.5 ± 0.5 (0.34 ± 0.02) 30 ± 0.5 (1.17 ± 0.02) 24 ± 0.5 (0.94 ± 0.02) 38 ± 0.5 (1.5 ± 0.02) 25.5 ± 0.5 (1.004 ± 0.02) 28 ± 1 (1.11 ± 0.04) Screws M5 x 0.8 length 10 35 ± 0.3 (1.38 ± 0.01) 75 ± 0.5 (2.95 ± 0.02) A 2 3 4 B C 5 6 7 8 Ø 6.5 ± 0.2 (Ø 0.26 ± 0.01) 14 ± 0.3 (0.55 ± 0.01) 1 D 18 ± 0.3 (0.71 ± 0.01) 5 ± 0.3 (0.2 ± 0.01) F E 46 ± 0.3 (1.81 ± 0.01) 80 ± 0.3 (3.15 ± 0.01) 94 ± 0.3 (3.7 ± 0.01) Document Number: 95004 Revision: 27-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Outline Dimensions MTK (with and without optional barrier) Vishay Semiconductors DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 24 ± 0.5 (0.94 ± 0.02) 8.5 ± 0.5 (0.34 ± 0.02) 30 ± 0.5 (1.17 ± 0.02) 25.5 ± 0.5 (1.004 ± 0.02) 28 ± 1 (1.11 ± 0.04) Screws M5 x 0.8 length 10 35 ± 0.3 (1.38 ± 0.01) 75 ± 0.5 (2.95 ± 0.02) A 2 3 4 B C 5 6 7 8 Ø 6.5 ± 0.2 (Ø 0.26 ± 0.01) 14 ± 0.3 (0.55 ± 0.01) 1 D 18 ± 0.3 (0.71 ± 0.01) 5 ± 0.3 (0.2 ± 0.01) F E 46 ± 0.3 (1.81 ± 0.01) 80 ± 0.3 (3.15 ± 0.01) 94 ± 0.3 (3.7 ± 0.01) www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 95004 Revision: 27-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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