PD-20709 rev. C 11/99
100BGQ045
100BGQ045J
100 Amp
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics
Description/Features
The NEW 100BGQ045 Schottky rectifier has been optimized for
ultra low forward voltage drop specifically for low voltage output in
high current AC/DC power supplies.
The proprietary barrier technology allows for reliable operation up
to 150°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
100BGQ045
Units
100
A
100
°C
141
A
45
V
IFSM @ tp = 5 µs sine
4400
A
VF
0.63
V
150
°C
Guard ring for enhanced ruggedness and long term
reliability
- 55 to 150
°C
PowIRtabTM package
I F(AV) Rectangular waveform
@ TC
I DC
Maximum
VRRM
@100 Apk typical
@ TJ
TJ
range
150°C TJ operation
High Frequency Operation
Ultra low forward voltage drop
Continuous High Current operation
Case Styles
100BGQ045
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100BGQ045J
1
100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
Voltage Ratings
Part number
VR
100BGQ045
Max. DC Reverse Voltage (V)
45
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
100BGQ Units
IF(AV) Max. Average Forward Current
IF(RMS) RMS Forward Current
100
A
141
A
Max. Peak One Cycle Non-Repetitive
4400
Surge Current
830
EAS
Non-RepetitiveAvalancheEnergy
40
mJ
IAR
Repetitive Avalanche Current
6
A
IFSM
Conditions
50% duty cycle @ TC = 100°C, rectangular wave form
T C = 95°C
5µs Sine or 3µs Rect. pulse
A
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated VRRM applied
TJ = 25 °C, IAS = 6 Amps, L = 2.0 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. V A = 1.5 x VR typical
Electrical Specifications
Parameters
100BGQ Units
Typ.
VFM
IRM
Forward Voltage Drop
(1)
(2)
Reverse Leakage Current (1)
VF(TO) Threshold Voltage
rt
Forward Slope Resistance
CT
Max. Junction Capacitance
LS
Typical Series Inductance
0.52 0.56
V
@ 50A
0.67 0.73
V
@ 100A
0.47 0.52
V
@ 50A
0.63 0.68
V
@ 100A
0.3
1
mA
TJ = 25 °C
180
320
mA
TJ = 125°C
600 1000
mA
TJ = 150 °C
0.379
2.7
TJ = 25 °C
TJ = 150 °C
VR = rated VR
VR = 45 V
VTJ = T J max.
mΩ
2700 pF
3.5
dv/dt Max. Voltage Rate of Change
Conditions
Max.
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
nH
Measured from tab to mounting plane
10,000V/ µs
(Rated V R)
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + rt x IF
Thermal-Mechanical Specifications
Parameters
100BGQ Units
TJ
Max. Junction Temperature Range
-55 to 150
°C
Conditions
Tstg
Max. Storage Temperature Range
-55 to 150
°C
RthJC Max. Thermal Resistance Junction
to Case
0.50
°C/W
DCoperation
RthCS Typical Thermal Resistance, Case to
0.20
°C/W
Mounting surface , smooth and greased
5 (0.18)
g (oz.)
Min.
1.2 (10)
Max.
2.4 (20)
N*m
(Ibf-in)
Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
2
PowIRtabTM
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
1 00 0
10 0 0
R e v e rse C u rre n t - I R (m A )
T J = 1 5 0 °C
TJ = 15 0° C
TJ = 12 5° C
10 0
1 2 5 °C
1 0 0 °C
10
7 5 °C
1
5 0 °C
0 .1
2 5 °C
0 .0 1
0
5
10
15
20
25
30
35
40
45
R e v e rse V o lt a g e - VR ( V )
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
(p F)
1 0 0 00
10
T = 2 5° C
Ju n c t io n C a p a c ita n c e - C
T
In sta n t a n e o u s Fo rw a rd C urre n t - I F (A )
TJ = 2 5° C
10 0
1
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
1 .4
J
1 00 0
10 0
1 .6
0
10
20
30
40
Fo rw a rd V o lt a g e D ro p - V FM (V )
R e v e rse V o lta g e - VR (V )
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
50
T he rm a l Im p e d a n c e Z thJC (°C / W )
1
D
D
D
D
D
=
=
=
=
=
0.75
0.50
0.33
0.25
0.20
PD M
0 .1
t1
Sin gle Pu lse
(T herm al R esista n ce)
N o t e s:
t2
1 . D u t y f a c t o r D = t 1/ t 2
2 . P e a k T J = P D M x Z thJ C+ T C
0 .0 1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
1 00
t 1 , R ectan gu la r Pu lse D uration (Seco nd s)
Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics
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3
100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
120
D
D
D
D
D
1 40
A v e ra g e P o w e r Lo ss - (W a t t s)
A llo w a b le C a se T e m p e ra t u re - (°C )
1 50
1 30
DC
1 20
1 10
1 00
Sq u a re w a v e (D = 0 .5 0 )
8 0 % R a t e d V R a p p lie d
90
80
70
60
100
80
=
=
=
=
=
0 .2 0
0 .2 5
0 .3 3
0 .5 0
0 .7 5
R M S Lim it
DC
60
40
20
s ee no te (3 )
0
50
0
20
40
60
80
0
10 0 1 2 0 1 40 1 60
20
40
60
80
1 0 0 1 20 14 0 1 60
A v e ra g e F o rw a rd C u rre n t - I F(A V) (A )
A v e ra g e Fo rw a rd C u rre n t - I F(AV ) (A )
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
N o n -R e p e t it iv e S urg e C u r re n t - I FSM (A )
10 0 0 0
1000
A t A n y R a t e d Lo a d C o n d itio n
A n d W it h R a t e d V RR M A p p lie d
F o llo w in g S u rg e
1 00
10
1 00
1 00 0
1 00 00
S q ua re W a v e P u lse D u ra t io n - t p (m ic ro se c )
Fig. 7 - Maximum Non-Repetitive Surge Current
L
H IG H - SP E E D
SW IT C H
IRFP4 60
D UT
Rg = 25 ohm
C UR R E N T
M O N IT O R
FR E E - W H E E L
D IO D E
+
V d = 2 5 V o lt
40 HFL4 0 S02
Fig. 8 - Unclamped Inductive Test Circuit
(3) Formula used: T C = TJ - (Pd + PdREV) x R thJC ;
Pd = Forward Power Loss = I F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
Ordering Information Table
Device Code
100 BGQ 045
J
2
4
1
1
-
Current Rating
2
-
Essential Part Number
3
-
Voltage code: Code = VRRM
4
-
none = PowIRtabTMstandard
6
J
3
= Short Lead Version
Outline Table
Case Style PowIRtabTM
Dimensions in millimeters and (inches)
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5
100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
Outline Table
Case Style PowIRtabTM "J" version
Dimensions in millimeters and (inches)
6
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100BGQ045, 100BGQ045J
PD-20709 rev. C 11/99
***************************************************
This model has been developed by
Wizard SPICE MODEL GENERATOR (1999)
( International Rectifier Corporation )
contains Proprietary Information
This model
***************************************************
SPICE Model Diode is composed by a
simple diode plus paralled VCG2T
***************************************************
.SUBCKT 100bgq45 ANO CAT
D1 ANO 1 DMOD (0.24359)
*Define diode model
. MODEL DMOD D ( IS=6.61799286342482E-05A, N=1.0212796726385, BV=45V,
+ IBV=0.115140026620575A,RS= 0.0005748724,CJO=3.31930927290723E-08,
+VJ=0.456112448442971,XTI=2,EG=0.721992455742664)
*****************************************************
* Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES (R=1, TC1=9.83346387011944)
GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-2.949174E-03/
9.833464)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*6.600191E-2*ABS(V(ANO,CAT)))-1)}
*****************************************************
.ENDS 100bgq45
Thermal Model Subcircuit
.SUBCKT 100bgq45T 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.66E+3
2.22E+2
1.48E+5
3.12E+5
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5
4
3
2
4
3
2
1
3.42E-2
2.55E-1
8.41E-2
1.81E-4
.ENDS 100bgq45T
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Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7