DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General industrial applications. DESCRIPTION 1 handbook, halfpage 3 2 NPN medium power transistor in a TO-39 metal package. 2 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER MIN. TYP. MAX. UNIT BSX45 − − 80 V BSX46 − − 100 V BSX47 − − 120 V BSX45 − − 40 V BSX46 − − 60 V BSX47 − − 80 V − − 1.5 A − − 6.25 W 63 100 160 collector-base voltage collector-emitter voltage CONDITIONS open emitter open base ICM peak collector current Ptot total power dissipation Tcase ≤ 25 °C hFE DC current gain IC = 100 mA; VCE = 1 V BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 fT 1997 Apr 23 transition frequency 100 IC = 50 mA; VCE = 10 V; f = 100 MHz 50 2 160 250 − − MHz Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BSX45 − 80 V BSX46 − 100 V − 120 V BSX45 − 40 V BSX46 − 60 V − 80 V − 7 V BSX47 VCEO MIN. collector-emitter voltage open base BSX47 VEBO emitter-base voltage open collector IC collector current (DC) − 1 A ICM peak collector current − 1.5 A IBM peak base current − 200 mA Ptot total power dissipation − 6.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C Tcase ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 200 K/W Rth j-c thermal resistance from junction to case 28 K/W 1997 Apr 23 3 Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER IE = 0; VCB = 60 V − − 30 nA IE = 0; VCB = 60 V; Tamb = 150 °C − − 10 µA IE = 0; VCB = 80 V − − 30 nA IE = 0; VCB = 80 V; Tamb = 150 ° − − 10 µA − − 10 nA BSX45-10; BSX46-10; BSX47-10 15 40 − BSX45-16; BSX46-16 25 90 − BSX45-10; BSX46-10; BSX47-10 63 100 160 BSX45-16; BSX46-16; BSX47-16 100 160 250 BSX45-10; BSX46-10; BSX47-10 25 40 − BSX45-16; BSX46-16 35 60 − BSX45-10; BSX46-10; BSX47-10 − 20 − BSX45-16; BSX46-16 − 30 − − − 1 V − − 900 mV IC = 100 mA; VCE = 1 V − − 1 V IC = 500 mA; VCE = 1 V 0.75 − 1.5 V IC = 1 A; VCE = 1 V − − 2 V BSX45 − − 25 pF BSX46 − − 20 pF BSX47 − − 15 pF IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 100 µA; VCE = 1 V hFE hFE DC current gain DC current gain DC current gain VCEsat collector-emitter saturation voltage VCEsat collector-emitter saturation voltage IC = 100 mA; VCE = 1 V IC = 500 mA; VCE = 1 V IC = 1 A; VCE = 1 V IC = 1 A; IB = 100 mA BSX45; BSX46 IC = 500 mA; IB = 25 mA BSX47 VBE Cc TYP. MAX. UNIT collector cut-off current BSX47 hFE MIN. collector cut-off current BSX45; BSX46 ICBO CONDITIONS base-emitter voltage collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − − 80 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 − − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1 kHz; B = 200 Hz − 3.5 − dB ICon = 100 mA; IBon = 5 mA; IBoff = −5 mA − − 200 ns − − 850 ns Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time 1997 Apr 23 4 Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 Apr 23 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 5 Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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