PHILIPS BSX45

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSX45; BSX46; BSX47
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• General industrial applications.
DESCRIPTION
1
handbook, halfpage
3
2
NPN medium power transistor in a TO-39 metal package.
2
3
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
MIN.
TYP.
MAX.
UNIT
BSX45
−
−
80
V
BSX46
−
−
100
V
BSX47
−
−
120
V
BSX45
−
−
40
V
BSX46
−
−
60
V
BSX47
−
−
80
V
−
−
1.5
A
−
−
6.25
W
63
100
160
collector-base voltage
collector-emitter voltage
CONDITIONS
open emitter
open base
ICM
peak collector current
Ptot
total power dissipation
Tcase ≤ 25 °C
hFE
DC current gain
IC = 100 mA; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16; BSX47-16
fT
1997 Apr 23
transition frequency
100
IC = 50 mA; VCE = 10 V; f = 100 MHz 50
2
160
250
−
−
MHz
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BSX45
−
80
V
BSX46
−
100
V
−
120
V
BSX45
−
40
V
BSX46
−
60
V
−
80
V
−
7
V
BSX47
VCEO
MIN.
collector-emitter voltage
open base
BSX47
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
1.5
A
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
6.25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
200
K/W
Rth j-c
thermal resistance from junction to case
28
K/W
1997 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
IE = 0; VCB = 60 V
−
−
30
nA
IE = 0; VCB = 60 V; Tamb = 150 °C
−
−
10
µA
IE = 0; VCB = 80 V
−
−
30
nA
IE = 0; VCB = 80 V; Tamb = 150 °
−
−
10
µA
−
−
10
nA
BSX45-10; BSX46-10; BSX47-10
15
40
−
BSX45-16; BSX46-16
25
90
−
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
BSX45-10; BSX46-10; BSX47-10
25
40
−
BSX45-16; BSX46-16
35
60
−
BSX45-10; BSX46-10; BSX47-10
−
20
−
BSX45-16; BSX46-16
−
30
−
−
−
1
V
−
−
900
mV
IC = 100 mA; VCE = 1 V
−
−
1
V
IC = 500 mA; VCE = 1 V
0.75
−
1.5
V
IC = 1 A; VCE = 1 V
−
−
2
V
BSX45
−
−
25
pF
BSX46
−
−
20
pF
BSX47
−
−
15
pF
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
hFE
DC current gain
IC = 100 µA; VCE = 1 V
hFE
hFE
DC current gain
DC current gain
DC current gain
VCEsat
collector-emitter saturation voltage
VCEsat
collector-emitter saturation voltage
IC = 100 mA; VCE = 1 V
IC = 500 mA; VCE = 1 V
IC = 1 A; VCE = 1 V
IC = 1 A; IB = 100 mA
BSX45; BSX46
IC = 500 mA; IB = 25 mA
BSX47
VBE
Cc
TYP. MAX. UNIT
collector cut-off current
BSX47
hFE
MIN.
collector cut-off current
BSX45; BSX46
ICBO
CONDITIONS
base-emitter voltage
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
−
80
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
50
−
−
MHz
F
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 1 kHz; B = 200 Hz
−
3.5
−
dB
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
−
−
200
ns
−
−
850
ns
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
1997 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 Apr 23
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
5
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 23
6
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
NOTES
1997 Apr 23
7
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© Philips Electronics N.V. 1997
SCA54
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117047/00/02/pp8
Date of release: 1997 Apr 23
Document order number:
9397 750 01882