DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT160 series Schottky barrier double diodes Product specification Supersedes data of 1999 Mar 26 1999 Sep 20 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAT160 series PINNING • Low switching losses BAT160 PIN • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. A C S 1 k1 a1 a1 2 n.c. n.c. n.c. 3 k2 a2 k2 4 a1, a2 k1, k2 k1, a2 4 page 1 3 2 n.c. Fig.2 APPLICATIONS MGL171 BAT160A diode configuration (symbol). • Low power switched-mode power supplies • Rectification 4 age • Polarity protection. 4 page 1 DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. 2 n.c. Fig.3 1 TYPE NUMBER 2 Top view MARKING AT160A BAT160C AT160C MSB002 - 1 BAT160S AT160S 4 page Fig.1 Simplified outline (SOT223) and pin configuration. 1 3 2 n.c. Fig.4 1999 Sep 20 MGL172 BAT160C diode configuration (symbol). 3 MARKING CODE BAT160A 3 2 MGL173 BAT160S diode configuration (symbol). Philips Semiconductors Product specification Schottky barrier double diodes BAT160 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − 60 V − 1 A − 10 A − 0.5 A storage temperature −65 +150 °C junction temperature − 150 °C VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current tp = 8.3 ms; half sinewave; JEDEC method IRSM non-repetitive peak reverse current tp = 100 µs Tstg Tj ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR Cd forward voltage reverse current diode capacitance see Fig.5 IF = 100 mA 400 mV IF = 1 A 650 mV IF = 2 A 850 mV VR = 60 V; note 1; see Fig.6 350 µA VR = 60 V; Tj = 100 °C; note 1; see Fig.6 8 mA f = 1 MHz; VR = 4 V; see Fig 7 60 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT223 standard mounting conditions. 1999 Sep 20 3 VALUE UNIT 100 K/W Philips Semiconductors Product specification Schottky barrier double diodes BAT160 series GRAPHICAL DATA MCD784 104 handbook, halfpage MCD768 105 handbook, halfpage IR IF (mA) (µA) 104 103 (1) 103 (2) (3) 102 102 (2) (1) 10 10 (3) (4) (4) 1 1 10−1 0 0.2 0.4 (1) Tamb = 125 °C. (2) Tamb = 100 °C. Fig.5 0.6 VF (V) 0.8 0 (3) Tamb = 75 °C. (4) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. Forward current as a function of forward voltage; typical values. Fig.6 MCD766 103 handbook, halfpage Cd (pF) 102 10 0 20 40 VR (V) 60 f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1999 Sep 20 20 4 40 VR (V) 60 (3) Tamb = 75 °C. (4) Tamb = 25 °C. Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier double diodes BAT160 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 1999 Sep 20 REFERENCES IEC JEDEC EIAJ SC-73 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification Schottky barrier double diodes BAT160 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Sep 20 6 Philips Semiconductors Product specification Schottky barrier double diodes BAT160 series NOTES 1999 Sep 20 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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