DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 1PS74SB23 Schottky barrier diode Product specification 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 PINNING FEATURES • Ultra fast switching speed PIN DESCRIPTION • Low forward voltage 1 anode • Fast recovery time 2 cathode • Guard ring protected 3 anode • Small plastic SMD package 4 anode • Capability of absorbing very high surge current. 5 cathode 6 anode APPLICATIONS • Rectification handbook, halfpage 6 5 4 • Circuit protection • Polarity protection • Switched-mode power supplies. 1 DESCRIPTION 2 Top view Planar Schottky barrier diode encapsulated in an SC-74 (SOT457) small plastic SMD package. 1, 3, 4, 6 2, 5 3 MAM421 Marking code: P1. Fig.1 Simplified outline SC-74 (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 25 V IF continuous forward current − 1 A IFSM non-repetitive peak forward current tp = 8.3 ms; half sinewave; JEDEC method; note 1 − 25 A IRSM non-repetitive peak reverse current tp = 100 µs − 0.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Note 1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel. 1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS TYP. MAX. UNIT IF = 100 mA 260 300 mV IF = 1 A 400 450 mV VR = 20 V; note 1; see Fig.3 80 500 µA VR = 25 V; note 1; see Fig.3 − 1 mA f = 1 MHz; VR = 4 V; see Fig.4 100 − pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SC-74 (SOT457) standard mounting conditions. 1999 Apr 26 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 GRAPHICAL DATA MBK572 104 handbook, halfpage MBK573 104 handbook, halfpage IF (mA) IR (mA) 103 (1) (2) 103 (3) (1) (2) (3) (4) 102 102 (4) 10 1 10 0 0.2 0.4 0.6 0.8 1 1.0 0 VF (V) (1) (2) (3) (4) Fig.2 Fig.3 MBK571 103 handbook, halfpage Cd (pF) 102 10 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1999 Apr 26 4 20 VR (V) 30 Tamb = 125 °C. Tamb = 100 °C. Tamb = 75 °C. Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. Forward current as a function of forward voltage; typical values. 10 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 1 2 bp e c 3 Lp w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 1999 Apr 26 REFERENCES IEC JEDEC EIAJ SC-74 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 26 6 Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 NOTES 1999 Apr 26 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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