Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP2N60E, PHB2N60E, PHD2N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA d VDSS = 600 V ID = 1.9 A g RDS(ON) ≤ 6 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB2N60E is supplied in the SOT404 surface mounting package. The PHD2N60E is supplied in the SOT428 surface mounting package. PINNING PIN SOT78 (TO220AB) DESCRIPTION 1 gate 2 drain1 3 source SOT404 SOT428 tab tab tab 2 tab drain 1 23 1 2 3 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ IDM PD Tj, Tstg Pulsed drain current Total dissipation Operating junction and storage temperature range - 55 600 600 ± 30 1.9 1.2 7.6 50 150 V V V A A A W ˚C Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C 1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. August 1998 1 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP2N60E, PHB2N60E, PHD2N60E AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR CONDITIONS MIN. MAX. UNIT - 144 mJ - 4 mJ - 1.9 A Non-repetitive avalanche energy Unclamped inductive load, IAS = 1 A; tp = 0.32 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy2 IAR = 1.9 A; tp = 1 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT404 and SOT428 packages, pcb mounted, minimum footprint TYP. MAX. UNIT - - 2.5 K/W - 60 50 - K/W K/W 2 pulse width and repetition rate limited by Tj max. August 1998 2 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP2N60E, PHB2N60E, PHD2N60E ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)DSS VGS = 0 V; ID = 0.25 mA 600 - - V VDS = VGS; ID = 0.25 mA - 0.1 - %/K 2.0 0.5 - 4.6 3.0 1.4 1 50 10 6 4.0 100 500 200 Ω V S µA µA nA Drain-source breakdown voltage ∆V(BR)DSS / Drain-source breakdown ∆Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage Forward transconductance gfs IDSS Drain-source leakage current TYP. MAX. UNIT IGSS VGS = 10 V; ID = 1 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 1 A VDS = 600 V; VGS = 0 V VDS = 480 V; VGS = 0 V; Tj = 125 ˚C Gate-source leakage current VGS = ±30 V; VDS = 0 V Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 2 A; VDD = 480 V; VGS = 10 V - 20 2 9 25 3 15 nC nC nC td(on) tr td(off) tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 300 V; RD = 150 Ω; RG = 24 Ω - 10 20 60 20 - ns ns ns ns Ld Ld Internal drain inductance Internal drain inductance - 3.5 4.5 - nH nH Ls Internal source inductance Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad - 7.5 - nH Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 236 34 20 - pF pF pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IS Tmb = 25˚C - - 1.9 A Tmb = 25˚C - - 7.6 A VSD Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage IS = 2 A; VGS = 0 V - - 1.2 V trr Qrr Reverse recovery time Reverse recovery charge IS = 2 A; VGS = 0 V; dI/dt = 100 A/µs - 360 2.4 - ns µC ISM August 1998 MIN. 3 TYP. MAX. UNIT Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated Normalised Power Derating PD% 120 PHP2N60E, PHB2N60E, PHD2N60E 10 Zth j-mb / (K/W) 110 D= 100 90 80 1 70 0.5 0.2 60 50 0.1 0.05 40 0.1 30 0.02 20 10 tp PD D= tp T 0 t T 0 0.01 0 20 40 60 80 100 Tmb / C 120 140 10us Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 0.1s 10ms Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% 120 1ms t/s ID, Drain current (Amps) 4 PHP1N60A 20 V Tj = 25 C 110 10 V 100 90 3 6.5 V 80 6V 70 60 50 2 5.5 V 40 30 1 5V 20 10 VGS = 4.5 V 0 0 20 40 60 80 Tmb / C 100 120 0 140 0 5 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V 10 D S/I Tmb = 25 C )= Drain-Source on resistance, RDS(ON) (Ohms) 5V 5.5 V 12 tp = 10 us VD N S(O 25 30 Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS PHP1N60 Drain current, ID (Amps) 10 15 20 VDS, Drain-Source voltage (Volts) PHP1N60A Tj = 25 C 10 RD 6V 100us 1 8 1 ms DC 0.1 6.5 V 6 10 V VGS = 20 V 10 ms 4 100ms 2 0.01 10 100 Drain-source voltage, VDS (Volts) 0 1000 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp August 1998 0 1 2 3 Drain current, ID (Amps) 4 Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS 4 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated 5 PHP2N60E, PHB2N60E, PHD2N60E Drain current, ID (A) VGS(TO) / V PHP1N60A VDS > ID x RDS(on)max max. 4 4 typ. 3 3 min. 2 2 150 C 1 1 Tj = 25 C 0 0 0 2 4 6 Gate-source voltage, VGS (V) 8 -60 10 Transconductance, gfs (S) -20 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj 2 -40 PHP1N60A 1E-01 SUB-THRESHOLD CONDUCTION ID / A VDS > ID x RDS(on)max 1E-02 1.5 2% 1E-03 Tj = 25 C typ 98 % 150 C 1 1E-04 0.5 0 1E-05 1E-06 0 1 2 3 Drain current, ID (A) 4 0 5 Fig.8. Typical transconductance. gfs = f(ID); parameter Tj 2 VGS / V 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) a 1 1000 PHP1N60A Capacitances, Ciss, Coss, Crss (pF) Ciss 2 100 Coss 1 10 Crss 0 -60 -40 -20 0 20 40 60 Tj / C 80 1 100 120 140 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1 A; VGS = 10 V August 1998 1 10 100 Drain-source voltage, VDS (V) 1000 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 5 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated 20 PHP2N60E, PHB2N60E, PHD2N60E Gate-Source voltage, VGS (Volts) ID = 2 A PHP1N60A 10 120 V 15 PHP1N60A Source-drain diode current, IF(A) VGS = 0 V 240 V 8 VDD = 480 V 150 C Tj = 25 C 6 10 4 5 2 0 0 10 20 Gate charge, Qg (nC) 30 0 40 Switching times, td(on), tr, td(off), tf (ns) 0.5 1 Source-Drain voltage, VSDS (V) 1.5 Fig.16. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); parameter VDS 1000 0 PHP1N60A VDD = 300 V RD = 150 Ohms Tj = 25 C Non-repetitive Avalanche current, IAS (A) 10 100 Tj prior to avalanche = 25 C td(off) 1 tr tf 10 125 C VDS tp td(on) ID 1 0.1 1E-06 0 20 40 60 Gate resistance, RG (Ohms) 80 1E-05 100 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) 1.15 PHP2N60E Fig.17. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tp); unclamped inductive load Normalised Drain-source breakdown voltage V(BR)DSS @ Tj Maximum Repetitive Avalanche Current, IAR (A) V(BR)DSS @ 25 C 10 1.1 1.05 Tj prior to avalanche = 25 C 1 1 125 C 0.1 0.95 0.9 0.85 -100 PHP2N60E 0.01 1E-06 -50 0 50 Tj, Junction temperature (C) 100 150 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.15. Normalised drain-source breakdown voltage; V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj) August 1998 1E-05 Fig.18. Maximum permissible repetitive avalanche current (IAR) versus avalanche time (tp) 6 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP2N60E, PHB2N60E, PHD2N60E MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1998 7 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP2N60E, PHB2N60E, PHD2N60E MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.20. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.21. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". August 1998 8 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP2N60E, PHB2N60E, PHD2N60E MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g seating plane 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.22. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.23. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". August 1998 9 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP2N60E, PHB2N60E, PHD2N60E DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 10 Rev 1.100