PHILIPS BFU725F

BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 01 — 13 July 2009
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features
n
n
n
n
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz fT silicon germanium technology
1.3 Applications
n
n
n
n
n
n
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCBO
collector-base voltage
open emitter
-
-
10
V
VCEO
collector-emitter voltage
open base
-
-
2.8
V
VEBO
emitter-base voltage
open collector
-
-
0.55
V
IC
collector current
-
25
40
mA
mW
Ptot
total power dissipation
Tsp ≤ 90 °C
hFE
DC current gain
IC = 10 mA; VCE = 2 V;
Tj = 25 °C
[1]
-
-
136
160
280
400
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
70
-
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 °C
-
55
-
GHz
Gp(max)
maximum power gain
IC = 25 mA; VCE = 2 V;
f = 5.8 GHz; Tamb = 25 °C
-
18
-
dB
NF
noise figure
IC = 5 mA; VCE = 2 V;
f = 5.8 GHz; ΓS = Γopt;
Tamb = 25 °C
-
0.7
-
dB
[2]
[1]
Tsp is the temperature at the solder point of the emitter lead.
[2]
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1
emitter
2
base
3
emitter
4
collector
Simplified outline
3
Graphic symbol
4
4
2
1, 3
2
1
mbb159
3. Ordering information
Table 3.
Ordering information
Type number
BFU725F/N1
Package
Name
Description
Version
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
4. Marking
Table 4.
Marking
Type number
Marking
Description
BFU725F/N1
B7*
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
2 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
10
V
VCEO
collector-emitter voltage
open base
-
2.8
V
VEBO
emitter-base voltage
open collector
-
0.55
V
IC
collector current
-
40
mA
-
136
mW
Tsp ≤ 90 °C
[1]
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
[1]
Tsp is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
Typ
Unit
440
K/W
001aah424
200
Ptot
(mW)
150
100
50
0
0
40
80
120
160
Tsp (°C)
Fig 1.
Power derating curve
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
3 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)CBO collector-base breakdown
voltage
IC = 2.5 µA; IE = 0 mA
10
-
-
V
V(BR)CEO collector-emitter breakdown
voltage
IC = 1 mA; IB = 0 mA
2.8
-
-
V
-
25
40
mA
-
100
nA
IC
collector current
ICBO
collector-base cut-off current
IE = 0 mA; VCB = 4.5 V
-
hFE
DC current gain
IC = 10 mA; VCE = 2 V
160 280 400
CCES
collector-emitter capacitance
VCB = 2 V; f = 1 MHz
-
268 -
fF
CEBS
emitter-base capacitance
VEB = 0.5 V; f = 1 MHz
-
400 -
fF
CCBS
collector-base capacitance
VCB = 2 V; f = 1 MHz
-
70
-
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
-
55
-
GHz
maximum power gain
IC = 25 mA; VCE = 2 V; Tamb = 25 °C
f = 1.5 GHz
-
28
-
dB
f = 1.8 GHz
-
27
-
dB
f = 2.4 GHz
-
25.5 -
dB
f = 5.8 GHz
-
18
-
dB
f = 12 GHz
-
13
-
dB
f = 1.5 GHz
-
26.7 -
dB
f = 1.8 GHz
-
25.4 -
dB
f = 2.4 GHz
-
23
-
dB
Gp(max)
|s21|2
NF
Gass
insertion power gain
noise figure
associated gain
IC = 25 mA; VCE = 2 V; Tamb = 25 °C
f = 5.8 GHz
-
16
-
dB
f = 12 GHz
-
9.3
-
dB
f = 1.5 GHz
-
0.42 -
dB
f = 1.8 GHz
-
0.43 -
dB
f = 2.4 GHz
-
0.47 -
dB
f = 5.8 GHz
-
0.7
-
dB
f = 12 GHz
-
1.1
-
dB
f = 1.5 GHz
-
24
-
dB
f = 1.8 GHz
-
22
-
dB
f = 2.4 GHz
-
20
-
dB
IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C
IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C
f = 5.8 GHz
-
13.5 -
dB
f = 12 GHz
-
10
dB
BFU725F_N1_1
Product data sheet
[1]
-
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
4 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Table 7.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
PL(1dB)
IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C
output power at 1 dB gain
compression
IP3
[1]
Min Typ Max Unit
f = 1.5 GHz
-
8.5
-
dBm
f = 1.8 GHz
-
9
-
dBm
f = 2.4 GHz
-
8.5
-
dBm
f = 5.8 GHz
-
8
-
dBm
f1 = 1.5 GHz
-
17
-
dBm
f1 = 1.8 GHz
-
17
-
dBm
f1 = 2.4 GHz
-
17
-
dBm
f1 = 5.8 GHz
-
19
-
dBm
IC = 25 mA; VCE = 2 V; ZS = ZL = 50 Ω; Tamb = 25 °C;
f2 = f1 + 1 MHz
third-order intercept point
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
001aak271
30
hFE
(1)
(2)
IC
(mA)
001aak272
400
(3)
350
(4)
20
(5)
(6)
300
(7)
(8)
(9)
10
(10)
250
(1)
(2)
(3)
(11)
200
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE (V)
0
10
20
30
IC (mA)
Tamb = 25 °C.
Tamb = 25 °C.
(1) IB = 110 µA
(1) VCE = 1 V
(2) IB = 100 µA
(2) VCE = 1.5 V
(3) IB = 90 µA
(3) VCE = 2 V
(4) IB = 80 µA
(5) IB = 70 µA
(6) IB = 60 µA
(7) IB = 50 µA
(8) IB = 40 µA
(9) IB = 30 µA
(10) IB = 20 µA
(11) IB = 10 µA
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain a function of collector current;
typical values
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
5 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
001aah427
160
001aak273
60
CCBS
(fF)
fT
(GHz)
120
40
80
20
40
0
0
0
4
8
12
0
10
20
30
VCB (V)
f = 1 MHz, Tamb = 25 °C.
Fig 4.
40
IC (mA)
VCE = 2 V; f = 2 GHz; Tamb = 25 °C.
Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 5.
Transition frequency as a function of collector
current; typical values
001aah429
102
(1)
(2)
(3)
G
(dB)
MSG
Gmax (4)
MSG
10
1
10−1
(5)
Gmax
1
102
10
IC (mA)
VCE = 2 V; Tamb = 25 °C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6.
Gain as a function of collector current; typical value
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
6 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
001aah430
50
001aah431
50
G
(dB)
G
(dB)
40
MSG
40
MSG
IS21I2
30
30
IS21I2
20
20
Gp(max)
Gp(max)
MSG
MSG
10
0
10−2
10−1
1
10
0
10−2
102
10
10−1
1
f (GHz)
VCE = 2 V; IC = 5 mA; Tamb = 25 °C.
Fig 7.
VCE = 2 V; IC = 25 mA; Tamb = 25 °C.
Gain as a function of frequency; typical values
001aah432
2.0
102
10
f (GHz)
Fig 8.
Gain as a function of frequency; typical values
001aah433
2.0
NFmin
(dB)
NFmin
(dB)
1.6
1.6
(1)
(1)
1.2
(2)
1.2
(2)
0.8
0.8
(3)
(4)
(5)
0.4
0.4
0
0
0
10
20
30
0
4
8
IC (mA)
VCE = 2 V; Tamb = 25 °C.
12
16
f (GHz)
VCE = 2 V; Tamb = 25 °C.
(1) f = 12 GHz
(1) IC = 25 mA
(2) f = 5.8 GHz
(2) IC = 5 mA
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
Fig 9.
Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
7 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
8. Package outline
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
D
SOT343F
E
A
y
X
HE
e
3
4
A
c
2
w
M
A
Lp
1
bp
b1
w
A
M
detail X
e1
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
bp
b1
c
D
E
e
e1
HE
Lp
w
y
mm
0.75
0.65
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.48
0.38
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-07-12
06-03-16
SOT343F
Fig 11. Package outline SOT343F
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
8 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
9. Abbreviations
Table 8.
Abbreviations
Acronym
Description
CDMA
Code Division Multiple Access
DBS
Direct Broadcast Satellite
DC
Direct Current
DRO
Dielectric Resonator Oscillator
LNA
Low Noise Amplifier
LNB
Low Noise Block
Ka
Kurtz above
NPN
Negative-Positive-Negative
RF
Radio Frequency
WLAN
Wireless Local Area Network
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU725F_N1_1
20090713
Product data sheet
-
-
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
9 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU725F_N1_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 July 2009
10 of 11
BFU725F/N1
NXP Semiconductors
NPN wideband silicon germanium RF transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 July 2009
Document identifier: BFU725F_N1_1