BC847DS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 25 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n n Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors AEC-Q101 qualified 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - 45 V - - 100 mA 200 300 450 Per transistor VCEO collector-emitter voltage IC collector current hFE DC current gain VCE = 5 V; IC = 2 mA BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 1 2 3 Graphic symbol 6 5 4 TR2 TR1 1 2 3 sym020 3. Ordering information Table 3. Ordering information Type number BC847DS Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code BC847DS ZL 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; tp ≤ 1 ms - 200 mA IBM peak base current single pulse; tp ≤ 1 ms - 200 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW total power dissipation Tamb ≤ 25 °C [1] - 380 mW Per device Ptot BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 2 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Conditions Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab621 500 Ptot (mW) 400 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT457 (SC-74) 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit - - 500 K/W - - 250 K/W - - 328 K/W Per transistor Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point in free air [1] Per device Rth(j-a) [1] thermal resistance from junction to ambient in free air Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BC847DS_1 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 3 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 006aab622 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off VCB = 30 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 °C - - 15 nA - - 5 µA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 5 V IC = 10 µA - 280 - IC = 2 mA 200 300 450 Per transistor ICBO VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 55 100 mV IC = 100 mA; IB = 5 mA - 200 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 755 850 mV IC = 100 mA; IB = 5 mA - 1000 - mV IC = 2 mA 580 650 700 mV IC = 10 mA - - 770 mV VBE base-emitter voltage VCE = 5 V BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 4 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Typ Max Unit Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 1.9 - pF Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz - 11 - pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz NF noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz - 1.9 - dB VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz - 3.1 - dB 006aaa533 600 0.20 IC (A) hFE 0.16 400 Min 006aaa532 IB (mA) = 4.50 4.05 3.60 3.15 2.70 2.25 1.80 1.35 (1) 0.12 0.90 (2) 0.08 0.45 200 (3) 0.04 0 10−2 10−1 1 10 0 102 103 IC (mA) 0 2 4 6 8 10 VCE (V) Tamb = 25 °C VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Per transistor: DC current gain as a function of collector current; typical values Fig 4. Per transistor: Collector current as a function of collector-emitter voltage; typical values BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 5 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 006aaa536 1 006aaa534 1.3 VBEsat (V) 1.1 VBE (V) 0.8 0.9 (1) (2) 0.7 (3) 0.6 0.5 0.3 0.4 10−1 1 10 102 0.1 10−1 103 1 10 102 103 IC (mA) IC (mA) VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 5. Per transistor: Base-emitter voltage as a function of collector current; typical values 006aaa535 10 VCEsat (V) Fig 6. Per transistor: Base-emitter saturation voltage as a function of collector current; typical values 006aaa537 103 fT (MHz) 1 102 10−1 (1) (2) (3) 10−2 10−1 1 10 102 10 103 1 102 10 IC (mA) IC (mA) VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Per transistor: Transition frequency as a function of collector current; typical values BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 6 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 006aab620 6 006aaa539 15 Ce (pF) 13 Cc (pF) 4 11 9 2 7 0 0 2 4 6 8 10 VCB (V) f = 1 MHz; Tamb = 25 °C Fig 9. 5 0 4 6 VEB (V) f = 1 MHz; Tamb = 25 °C Per transistor: Collector capacitance as a function of collector-base voltage; typical values Fig 10. Per transistor: Emitter capacitance as a function of emitter-base voltage; typical values BC847DS_1 Product data sheet 2 © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 7 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 11. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BC847DS Package Description SOT457 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping BC847DS_1 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 8 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 11. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 12. Reflow soldering footprint SOT457 (SC-74) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 13. Wave soldering footprint SOT457 (SC-74) BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 9 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BC847DS_1 20090825 Product data sheet - - BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 10 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BC847DS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 25 August 2009 11 of 12 BC847DS NXP Semiconductors 45 V, 100 mA NPN/NPN general-purpose transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 August 2009 Document identifier: BC847DS_1