100mA / 50V Digital transistors (with built-in resistors) DTC113ZUA / DTC113ZKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTC113ZUA 2.0 Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be negatively biased. The insulation also eliminates most of the parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. 0.9 Part No. 0.15 1.3 ROHM : UMT3 EIAJ : SC-70 Each lead has same dimensions Addreviated symbol : 121 2.9 (1) GND (2) IN (3) OUT 1.1 0.4 0.8 1.6 2.8 (3) (2) SMT3 Taping T106 T146 Basic ordering unit (pieces) 3000 3000 (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 Each lead has same dimensions Addreviated symbol : E21 0.3Min. UMT3 Taping (1) GND (2) IN (3) OUT − DTC113ZUA − DTC113ZKA Absolute maximum ratings (Ta=25C) Symbol Limits Inner circuit Unit DTC113ZUA DTC113ZKA R1 Supply voltage VCC 50 V Input voltage VIN −5 to +10 V IO 100 IC(Max.) 100 Power dissipation PD 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Output current 0.1Min. 0.65 0.65 DTC113ZKA Code Parameter 2.1 1.25 (1) (2) Packaging specifications Packaging type 0.7 (3) Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Package 0.2 0.3 OUT IN R2 mA GND IN OUT GND R1=1.0kΩ, R2=10kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTC113ZUA / DTC113ZKA Data Sheet Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 7.2 mA VI=5V IO(off) − − 0.5 μA VCC=50V, VI=0V VO=5V, IO=5mA Unit V DC current gain GI 33 − − − Input resistance R1 0.7 1 1.3 kΩ Resistance ratio R2/R1 8 10 12 − − 250 − MHz fT ∗ Transition frequency Conditions VCC=5V, IO=100μA VO=0.3V, IO=20mA IO/II=10mA/0.5mA − − VCE=10V, IE= −5mA, f=100MHz ∗ Characteristics of built-in transistor Electrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) VO=5V 500 2m 1m 500μ Ta=100°C 25°C −40°C 200μ 100μ 50μ 20μ 10μ 5μ 2μ 1μ 0 Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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