ROHM DTA123EM

-100mA / -50V Digital transistors
(with built-in resistors)
DTA123EM / DTA123EE / DTA123EUA / DTA123EKA
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
(see equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zDimensions (Unit : mm)
DTA123EM
DTA123EE
0.7
1.6
0.55
0.3
0.2
(3)
(2)
0.2
(1)(2)
0.4 0.4
0.13
(1) IN
(2) GND
(3) OUT
0.8
ROHM : VMT3
DTA123EUA
0.2
0.7
1.1
0.8
(3)
1.6
2.8
2.1
1.25
0.1Min.
(1)
0.15
1.3
(1) GND
(2) IN
(3) OUT
(2)
(1)
0.95 0.95
0.15
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Abbreviated symbol : 12
zPackaging specifications
Part No.
2.9
0.4
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : 12
DTA123EKA
(3)
(2)
0.15
1.0
ROHM : EMT3
0.9
0.3
0.2
0.5 0.5
Abbreviated symbol : 12
2.0
(1)
0.2
0.5
0.3Min.
0.22
0.1Min.
0.8
1.2
0.8
(3)
1.6
1.2
0.32
1.9
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : 12
zEquivalent circuit
Package
VMT3
EMT3
UMT3
SMT3
Packaging type
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
Basic ordering
unit (pieces)
8000
3000
3000
3000
−
−
−
−
−
OUT
R1
IN
R2
GND(+)
DTA123EM
DTA123EE
−
DTA123EUA
−
−
DTA123EKA
−
−
OUT
IN
−
−
GND(+)
R1=R2=2.2kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.03 - Rev.B
DTA123EM / DTA123EE / DTA123EUA / DTA123EKA
Data Sheet
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
DTA123EM DTA123EE DTA123EUA DTA123EKA
Supply voltage
VCC
−50
V
Input voltage
VIN
−12 to +10
V
IO
−100
IC(Max.)
−100
Output current
mA
Power dissipation
PD
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
150
200
mW
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Symbol
Min.
Typ.
Max.
VI(off)
−
−
−0.5
VI(on)
−3
−
−
VO(on)
−
−0.1
−0.3
V
II
−
−
−3.8
mA
VI=−5V
VCC=−50V, VI=0V
Input current
Unit
V
IO(off)
−
−
−0.5
µA
DC current gain
GI
20
−
−
−
Input resistance
R1
1.54
2.2
2.86
kΩ
Resistance ratio
R2/R1
0.8
1
1.2
−
−
250
−
MHz
Output current
fT ∗
Transition frequency
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−20mA
IO/II=−10mA/−0.5mA
VO=−5V, IO=−20mA
−
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
zElectrical characteristic curves
10m
5m
VO=−0.3V
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m
−50m −100m
Fig.1 Input voltage vs. output current
(ON characteristics)
1
VO=−5V
500
2m
1m
500µ
Ta=100°C
25°C
−40°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
200
100
50
20
Ta=100°C
25°C
−40°C
10
5
2
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
1k
VCC=−5V
DC CURRENT GAIN : GI
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m
−50m −100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
IO/II=20
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
100m
Ta=100°C
50m
25°C
−40°C
20m
10m
5m
2m
1m
−100µ −200µ −500µ
−1m −2m
−5m −10m −20m
−50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.03 - Rev.B
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