Standard LDO Regulators Standard Fixed Output LDO Regulators with Shutdown Switch BD33C0AWFP, BD50C0AWFP No.11022EAT01 ●Description The BDXXC0AWFP Series is low-saturation regulator. This IC has a built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits and a thermal shutdown circuit that protects the IC from thermal damage due to overloading. ●Features 1) Output Current: 1A 2) Output Voltage: 3.3V／5.0V 2) High Output Voltage Precision : ±1% 3) Low saturation with PDMOS output 4) Built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits 5) Built-in thermal shutdown circuit for protecting the IC from thermal damage due to overloading 6) Low ESR Capacitor 7) TO252-5 packaging ●Applications Audiovisual equipments, FPDs, televisions, personal computers or any other consumer device ●Absolute maximum ratings (Ta=25℃) Parameter Symbol Ratings Unit Vcc -0.3 ~ +35.0 V VCTL -0.3 ~ +35.0 V Pd 1.3 W Operating Temperature Range Topr -40 ~ +105 ℃ Storage Temperature Range Tstg -55 ~ +150 ℃ Tjmax +150 ℃ Supply Voltage *1 Output Control Voltage Power Dissipation (TO252-5) Maximum Junction Temperature *2 *1 Not to exceed Pd. *2 TO252-5:Reduced by 10.4mW / ℃ over Ta = 25℃, when mounted on glass epoxy board: 70mm×70mm×1.6mm. NOTE : This product is not designed for protection against radioactive rays. ●Operating conditions (Ta=25℃) Parameter Symbol Min. Max. Unit Supply Voltage Vcc Vo+1V 25.0 V Output Control Voltage VCTL 0 25.0 V Io 0 1.0 A Output Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Electrical characteristics ■BD33C0AWFP(Unless otherwise specified, Ta=25℃, Vcc=8.3V,VCTL=5V,Io=0mA) Parameter Symbol Min. Typ. Max. Unit Shut Down Current Isd － 0 10 µA Bias Current Ib － 0.5 1.0 mA Output Voltage Vo 3.267 3.300 3.333 V Io=200mA Dropout Voltage ΔVd － 0.4 0.7 V Vcc=Vo×0.95, Io=500mA Ripple Rejection R.R. 45 55 － dB *1 f=120Hz,ein =1Vrms, Io=100mA Line Regulation Reg.I － 20 60 mV Vo+1V→25V Load Regulation Reg.L － V Io=5mA→1A Tcvo.1 － +0.04 － %/℃ Io=5mA,Tj=-40～-20℃ Tcvo.2 － ±0.005 － %/℃ Io=5mA,Tj=-20～+105℃ CTL ON Mode Voltage VthH 2.0 － － V ACTIVE MODE CTL OFF Mode Voltage VthL － － 0.8 V OFF MODE CTL Bias Current ICTL － 25 50 µA Temperature Coefficient of Output Voltage *1 Vo×0.010 Vo×0.020 Conditions VCTL=0V ein : Input Voltage Ripple ■BD50C0AWFP(Unless otherwise specified, Ta=25℃, Vcc=10V,VCTL=5V,Io=0mA) Parameter Symbol Min. Typ. Max. Unit Shut Down Current Isd － 0 10 µA Bias Current Ib － 0.5 1.0 mA Output Voltage Vo 4.950 5.000 5.050 V Io=200mA Dropout Voltage ΔVd － 0.3 0.5 V Vcc=Vo×0.95, Io=500mA Ripple Rejection R.R. 45 55 － dB *1 f=120Hz,ein =1Vrms, Io=100mA Line Regulation Reg.I － 20 60 mV Vo+1V→25V Load Regulation Reg.L － V Io=5mA→1A Tcvo.1 － +0.04 － %/℃ Io=5mA,Tj=-40～-20℃ Tcvo.2 － ±0.005 － %/℃ Io=5mA,Tj=-20～+105℃ CTL ON Mode Voltage VthH 2.0 － － V ACTIVE MODE CTL OFF Mode Voltage VthL － － 0.8 V OFF MODE CTL Bias Current ICTL － 25 50 µA Temperature Coefficient of Output Voltage *1 Vo×0.010 Vo×0.020 Conditions VCTL=0V ein : Input Voltage Ripple www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Electrical characteristic curves (Reference data) ■BD33C0AWFP(Unless otherwise specified, Ta=25℃, Vcc=8.3V,VCTL=5V,Io=0mA) 6 0.8 15 5 OUTPUT VOLTAGE : Vo [V] 18 STANBY CURRENT： Isd [µA] CIRCUIT CURRENT： Ib+IFEEDBACK_R 1.0 12 [mA] 0.6 0.4 0.2 0.0 9 6 3 0 5 4 3 2 1 Fig.3 Line Regulation (Io=0mA) 800 700 600 4 500 3 400 300 2 200 1 100 0 0 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE： Vcc [V] 400 800 1200 1600 2000 Fig.5 Load Regulation 60 50 40 30 20 CIRCUIT CURRENT： Ib+IFEEDBACK_R [mA] OUTPUT VOLTAGE ： Vo [V] 70 5 4 3 2 1 10 0 1000000 0 -40 FREQUENCY： f [Hz] 0 20 40 60 80 1000 100 1.0 0.8 0.6 0.4 0.2 0.0 0 AMBIENT TEMPERATURE： Ta[℃] 200 400 600 800 1000 OUTPUT CURRENT： Io [mA] Fig.9 Circuit Current (lo=0mA→1000 mA) Fig.8 Output Voltage Temperature Characteristics Fig.7 Ripple Rejection (lo=100mA) 100 -20 200 400 600 800 OUTPUT CURRENT： IO [mA] Fig.6 Dropout Voltage (Vcc=Vo×0.95V) (lo=0mA→1000mA) 6 80 100000 0 OUTPUT CURRENT： IO[mA] Fig.4 Line Regulation (Io=500mA) RIPPLE REJECTION： R.R. [dB] 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE： Vcc [V] DROPOUT VOLTAGE ： ΔVd [mV] 5 OUTPUT VOLTAGE ： Vo [V] OUTPUT VOLTAGE ： Vo [V] 6 10000 1 Fig.2 Shut Down Current 6 1000 2 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE： Vcc [V] Fig.1 Circuit Current 100 3 0 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE： Vcc [V] 10 4 6 6 5 5 80 70 OUTPUT VOLTAGE ： Vo [V] OUTPUT VOLTAGE ： Vo [V] CIRCUIT CURRENT： I CTL[µA] 90 4 60 50 4 3 40 3 2 30 20 2 1 1 10 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 CONTROL VOLTAGE： VCTL[V] Fig.10 CTL Voltage vs CTL Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 2 4 6 8 10 12 14 16 18 20 22 24 CONTROL VOLTAGE： VCTL[V] Fig.11 CTL Voltage vs Output Voltage 3/12 0 130 140 150 160 170 180 190 AMBIENT TEMPERATURE： Ta [℃] Fig.12 Thermal Shutdown Circuit Characteristics 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Electrical characteristic curves (Reference data) ■BD50C0AWFP (Unless otherwise specified, Ta=25℃, Vcc=10V,VCTL=5V,Io=0mA) 6 0.8 15 5 OUTPUT VOLTAGE : Vo [V] 18 STANBY CURRENT： Isd [µA] CIRCUIT CURRENT: Ib+IFEEDBACK_R [mA] 1.0 12 0.6 0.4 0.2 9 6 3 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE： Vcc [V] 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE: Vcc [V] Fig.14 Shut Down Current Fig.15 Line Regulation (Io=0mA) 600 500 400 4 300 3 200 2 100 1 0 0 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE: Vcc [V] 400 800 1200 1600 OUTPUT CURRENT： IO[mA] 60 50 40 30 20 5 4 3 2 1 10 0 -40 0 100000 1000000 FREQUENCY： f [Hz] OUTPUT VOLTAGE ： Vo [V] CIRCUIT CURRENT: I CTL[µA] 90 60 50 40 30 20 20 40 60 80 1000 100 0.6 0.4 0.2 0.0 0 200 6 5 5 3 2 1 600 800 1000 Fig.21 Circuit Current (lo=0mA→1000 mA) 6 4 400 OUTPUT CURRENT： Io [mA] Fig.20 Output Voltage Temperature Characteristics 100 70 0 800 0.8 AMBIENT TEMPERATURE： Ta[℃] Fig.19 Ripple Rejection (lo=100mA) 80 -20 600 1.0 OUTPUT VOLTAGE ： Vo [V] 10000 400 Fig.18 Dropout Voltage (Vcc=Vo×0.95V) (lo=0mA→1000mA) CIRCUIT CURRENT： Ib+IFEEDBACK_R [mA] OUTPUT VOLTAGE ： Vo [V] RIPPLE REJECTION： R.R. [dB] 70 1000 200 OUTPUT CURRENT： IO [mA] 6 80 100 0 2000 Fig.17 Load Regulation Fig.16 Line Regulation (Io=500mA) 10 1 DROPOUT VOLTAGE ： ?Vd [mV] 5 OUTPUT VOLTAGE ： Vo [V] OUTPUT VOLTAGE : Vo [V] 6 2 0 2 4 6 8 10 12 14 16 18 20 22 24 SUPPLY VOLTAGE： Vcc [V] Fig.13 Circuit Current 6 3 0 0 0.0 4 4 3 2 1 10 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 CONTROL VOLTAGE： VCTL[V] Fig.22 CTL Voltage vs CTL Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 2 4 6 8 10 12 14 16 18 20 22 24 CONTROL VOLTAGE： VCTL[V] Fig.23 CTL Voltage vs Output Voltage 4/12 0 130 140 150 160 170 180 190 AMBIENT TEMPERATURE： Ta [℃] Fig.24 Thermal Shutdown Circuit Characteristics 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Measurement circuit for reference data Measurement circuit for reference data ■BDXXC0AWFP ( ):Vo=5.0V A Vcc (1.0μF) 2.2μF CTL Vo Vo Vcc 1μF N.C. (1.0μF) 2.2μF GND CTL 5V N.C. 1μF 1μF (1.0μF) 2.2μF GND CTL GND N.C. V 5V A Measurement Circuit of Fig.2 and Fig.14 Measurement Circuit of Fig.1 and Fig.13 Vo Vcc Measurement Circuit of Fig.3 and Fig.15 V V Vo Vcc (1.0μF) 2.2μF 1μF CTL N.C. GND Vo Vcc (1.0μF) 2.2μF V CTL GND N.C. 1μF (1.0μF) 2.2μF A 10V 5V GND N.C. 1μF A 5V Measurement Circuit of Fig.5 and Fig.17 Vo Vcc CTL 4.75V 500mA 5V Measurement Circuit of Fig.4 and Fig.16 Vo Vcc Measurement Circuit of Fig.6 and Fig.18 Vo Vcc Vo Vcc 1Vrms (1.0μF) 2.2μF ～ CTL GND N.C. (1.0μF) 2.2μF 1μF CTL GND N.C. (1.0μF) 2.2μF 1μF V 10V CTL GND N.C. 1μF 10V 100mA 10V 5V 5V 5V A Measurement Circuit of Fig.7 and Fig.19 Vo Vcc (1.0μF) 2.2μF A Measurement Circuit of Fig.8 and Fig.20 GND Vo Vcc 1μF CTL (1.0μF) 2.2μF N.C. 10V CTL Measurement Circuit of Fig.9 and Fig.21 GND N.C. Vo Vcc 1μF (1.0μF) 2.2μF V CTL GND N.C. 1μF V 10V 10V 5V Measurement Circuit of Fig.10 and Fig.22 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Measurement Circuit of Fig.11 and Fig.23 Measurement Circuit of Fig.12 and Fig.24 5/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Block Diagrams GND FIN VREF:Bandgap Reference OCP:Over Current Protection Circuit VREF TSD:Thermal Shut Down Circuit Driver Driver:Power Transistor Driver R1,R2:Feed back Resister R2 OCP R1 TSD 1 2 CTL Vcc 3 3 4 N.C. Vo 5 N.C. Fig.25 Pin No. Pin Name Function 1 CTL Output Control Pin 2 Vcc Power Supply Pin 3 N.C. N.C. Pin 4 Vo 5 N.C. N.C. Pin Output Pin Fin GND GND ●TOP VIEW〈Package dimension〉 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Input / Output Equivalent Circuit Diagrams CTL Pin Vcc Pin 200kΩ Vcc 1kΩ CTL IC 200kΩ Vo Pin Vcc 15 kΩ 34kΩ(BD33C0AWFP) 56.6kΩ(BD50C0AWFP) Vo 10kΩ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Thermal Design 5 Mounted on a Rohm standard board Board size : 70 ㎜×70 ㎜×1.6 ㎜ Copper foil area :7 ㎜×7 ㎜ ③4.80 4 POWER DISSIPATON:Pd[W] 4 POWER DISSIPATON:Pd[W] 5 Mounted on a Rohm standard board Board size : 70 ㎜×70 ㎜×1.6 ㎜ Copper foil area :7 ㎜×7 ㎜ TO252-5θja=96.2(℃/W) 3 2 1.30 1 0 ①2-layer board (back surface copper foil area :15 ㎜×15 ㎜) ②2-layer board (back surface copper foil area :70 ㎜×70 ㎜) ③4-layer board (back surface copper foil area :70 ㎜×70 ㎜) ②3.50 3 ①:θja=67.6℃/W ②:θja=35.7℃/W ③:θja=26.0℃/W ①1.85 2 1 0 0 25 50 75 100 125 150 0 25 AMBIENT T EMPERAT URE:Ta[℃] 50 75 100 125 150 AMBIENT T EMPERAT URE:Ta[℃] Fig.26 Fig.27(Reference data) When using at temperatures over Ta=25℃, please refer to the heat reducing characteristics shown in Fig.26 and Fig.27. The IC characteristics are closely related to the temperature at which the IC is used, so it is necessary to operate the IC at temperatures less than the maximum junction temperature Tjmax. Fig.26 and Fig.27 shows the acceptable loss and heat reducing characteristics of the TO252-5 package. Even when the ambient temperature Ta is a normal temperature (25℃), the chip (junction) temperature Tj may be quite high so please operate the IC at temperatures less than the acceptable loss Pd. The calculation method for power consumption Pc(W) is as follows :(Fig.27③) Pc=(Vcc－Vo)×Io+Vcc×Ib Acceptable loss Pd≧Pc Solving this for load current Io in order to operate within the acceptable loss, Io≦ Pd－Vcc×Ib (Please refer to Fig.9,21 for Ib.) Vcc: Vo: Io: Ib: Ishort: Input voltage Output voltage Load current Circuit current Short current Vcc－Vo It is then possible to find the maximum load current IoMax with respect to the applied voltage Vcc at the time of thermal design. Calculation Example) Io≦ When Ta=85℃ BD33C0AWFP:Vcc=8.3V,Vo=3.3V BD50C0AWFP:Vcc=10V,Vo=5.0V 2.496－10×Ib 5 Io≦498.2mA (Ib:0.5mA) Fig.27③:θja=26.0℃/W → -38.4mW/℃ 25℃=4.80W → 85℃=2.496W Please refer to the above information and keep thermal designs within the scope of acceptable loss for all operating temperature ranges. The power consumption Pc of the IC when there is a short circuit (short between Vo and GND) is : Pc=Vcc×(Ib+Ishort) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. (Please refer to Fig.5,17 for Ishort.) 8/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Notes for use 1. Absolute maximum ratings Use of the IC in excess of absolute maximum ratings (such as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC. 2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage, external circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics. 3. GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Ensure that no pins are at a voltage below the GND at any time, regardless of transient characteristics. 4. Ground wiring pattern When using both small-signal and large-current GND traces, the two ground traces should be routed separately but connected to a single ground potential within the application in order to avoid variations in the small-signal ground caused by large currents. Also ensure that the GND traces of external components do not cause variations on GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance. 5. Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply or GND pins (caused by poor soldering or foreign objects) may result in damage to the IC. 6. Operation in strong electromagnetic fields Using this product in strong electromagnetic fields may cause IC malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present. 7. Testing on application boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from a jig or fixture during the evaluation process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Thermal consideration Use a thermal design that allows for a sufficient margin in light of the Pd in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions. (Pd≧Pc) Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current Package Power dissipation Power dissipation 9. : Pd (W)=(Tjmax－Ta)/θja : Pc (W)=(Vcc－Vo)×Io+Vcc×Ib Vcc pin Insert a capacitor(Vo≧5V:capacitor≧1µF ~ , Vo＜5V:capacitor≧2.2µF ~)between the Vcc and GND pins. The appropriate capacitance value varies by application. Be sure to allow a sufficient margin for input voltage levels. Electric capacitance IC Ceramic capacitors,Low ESR capacitors www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP 10. Output pin It is necessary to place capacitors between each output pin and GND to prevent oscillation on the output. Usable capacitance values range from 1µF to 1000µF. Ceramic capacitors can be used as long as their ESR value is low enough to prevent oscillation (0.001Ω to 20Ω). Abrupt fluctuations in input voltage and load conditions may affect the output voltage. Output capacitance values should be determined only through sufficient testing of the actual application. ●BD33C0AWFP Vo=3.3V Vcc=4.3V～25V Io=0A～1A Ta=-40℃～+105℃ Vcc=4.3V～25V(BD33C0AWFP)/6V～25V(BD50C0AWFP) Ta=-40℃～+105℃ Cin=2.2μF～100μF Cout=1μF～100μF 100 ●BD50C0AWFP Vo=5V Vcc=6V～25V Io=0A～1A Ta=-40℃～+105℃ 100 100 Unstable operating region Stable operating region 0.1 Stable operating region 10 0.01 2.2 0.001 1 Cin（μF） 1 Cin（μF） Cout_ESR(Ω） 10 Stable operating region 10 Unstable operating region 0 200 400 600 800 1000 1 1 10 Io(mA) 100 1 Cout_ESR vs Io(reference data) 10 100 Cout(μF) Cout（μF） Cin vs Cout(reference data) Vo Vcc BD33C0AWFP(4.3V～25V) BD50C0AWFP(6V～25V) Cin BD33C0AWFP (2.2μF～) BD50C0AWFP (1.0μF～) Cout(1.0μF～) CTL GND N.C. ESR Io(ROUT) (0.001Ω～) VCTL (5V) ※Operation Notes 10 Measurement circuit 11. CTL pin Do not make voltage level of chip enable pin keep floating level, or in between VthH and VthL. Otherwise, the output voltage would be unstable or indefinite. 12. For a steep change of the Vcc voltage Because MOS FET for output Transistor is used when an input voltage change is very steep, it may evoke large current. When selecting the value of external circuit constants, please make sure that the operation on the actual application takes these conditions into account. 13. For an infinitesimal fluctuations of output voltage. At the use of the application that infinitesimal fluctuations of output voltage caused by some factors (e.g. disturbance noise, input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g. insert the filter, etc.). 14. Over current protection circuit (OCP) The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous or transitive operation of the protection circuits. 15. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of thermal overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used after this function has activated, or in applications where the operation of this circuit is assumed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP 16. Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal state may cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent reverse current flow, or insert bypass diodes between Vcc and each pin. 17. Positive voltage surges on VCC pin A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V on the VCC pin. Vcc GND 18. Negative voltage surges on VCC pin A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin. Vcc GND 19. Output protection diode Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a protection diode should be inserted on the output to protect the IC. 20. Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below): ○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode ○When GND > Pin B, the PN junction operates as a parasitic transistor Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Transistor (NPN) Resistor B (Pin B) (Pin A) (Pin B) C E B N P P+ N P P+ N P+ N P+ GND Parasitic elements or transistors Parasitic elements or transistors N P substrate Parasitic elements GND E P N N C (Pin A) GND Parasitic elements Example of Simple Monolithic IC Architecture www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/12 2011.07 - Rev.A Technical Note BD33C0AWFP, BD50C0AWFP ●Ordering part number B Part No. D X X Output voltage C 0 A Current capacity 33: 3.3V output C0A:Output 1A 50:5.0V～ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. W F P Shutdown switch Package W : With switch FP : TO252 None : Without switch 12/12 - E 2 Packaging specification E2: Embossed tape and reel 2011.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. 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Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A