DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM56 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability , 2/3 page k(Datasheet) • Available in ammo-pack • Also available with preformed leads for easy insertion. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR PARAMETER CONDITIONS UNIT BYM56A − 200 V BYM56B − 400 V BYM56C − 600 V BYM56D − 800 V BYM56E − 1000 V crest working reverse voltage BYM56A − 200 V BYM56B − 400 V BYM56C − 600 V BYM56D − 800 V BYM56E − 1000 V − 200 V continuous reverse voltage BYM56B − 400 V BYM56C − 600 V BYM56D − 800 V − 1000 V BYM56E IFSM MAX. repetitive peak reverse voltage BYM56A IF(AV) MIN. average forward current non-repetitive peak forward current 1996 May 24 Ttp = 60 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 3.5 A Tamb = 65 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 1.4 A t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 2 80 A Philips Semiconductors Product specification Controlled avalanche rectifiers SYMBOL BYM56 series PARAMETER CONDITIONS MIN. MAX. ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C see Fig.5 UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER CONDITIONS MIN. TYP. IF = 3 A; Tj = Tj max; see Fig.6 − − 0.95 V IF = 3 A; see Fig.6 − − 1.15 V BYM56A 225 − − V BYM56B 450 − − V BYM56C 650 − − V BYM56D 900 − − V BYM56E 1100 − − V VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 150 µA forward voltage reverse avalanche breakdown voltage MAX. UNIT IR = 0.1 mA reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 90 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1996 May 24 3 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series GRAPHICAL DATA MBG037 MBG058 5.0 2.0 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 4.0 1.6 3.0 1.2 2.0 0.8 1.0 0.4 0 0 40 0 80 120 160 200 Ttp (oC) 40 0 80 120 a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm. a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MGC746 160 200 Tamb (oC) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MSA873 200 5 handbook, halfpage handbook, halfpage a=3 P (W) 2 2.5 1.57 Tj (°C) 1.42 4 3 100 2 A 1 0 0 1 2 3 B C D E 0 4 0 IF(AV) (A) 400 800 VR (V) 1200 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 May 24 Fig.5 4 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series MBG046 MGC734 3 10halfpage handbook, 16 handbook, halfpage IF (A) IR (µA) 12 10 2 max 8 10 4 1 0 1 0 10 −1 2 VF (V) 40 80 120 160 200 Tj (oC) Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.6 0 VR = VRRMmax. Forward current as a function of forward voltage; maximum values. Fig.7 Reverse current as a function of junction temperature; maximum values. MBG027 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 102 VR (V) 10 3 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1996 May 24 Fig.9 Device mounted on a printed-circuit board. 5 Philips Semiconductors Product specification Controlled avalanche rectifiers handbook, full pagewidth BYM56 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 May 24 6 MAM057 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series , PACKAGE OUTLINE k handbook, full pagewidth 4.5 max 28 min 5.0 max Dimensions in mm. 28 min a 1.35 max MBC049 Fig.11 SOD64. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. 1996 May 24 7