DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD17 series General purpose controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 26 1999 Nov 11 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers BYD17 series FEATURES • Glass passivated • High maximum operating temperature k handbook, 4 columns a • Low leakage current • Excellent stability MAM061 • Guaranteed avalanche energy absorption capability • Shipped in 8 mm embossed tape Fig.1 Simplified outline (SOD87) and symbol. • Smallest surface mount rectifier outline. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec(1) technology. TYPE NUMBER MARKING CODE This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. BYD17D 17D PH BYD17G 17G PH (1) Implotec is a trademark of Philips. BYD17J 17J PH BYD17K 17K PH BYD17M 17M PH LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR PARAMETER CONDITIONS MIN. MAX. UNIT BYD17D − 200 V BYD17G − 400 V BYD17J − 600 V BYD17K − 800 V BYD17M − 1000 V BYD17D − 200 V BYD17G − 400 V BYD17J − 600 V BYD17K − 800 V BYD17M − 1000 V BYD17D − 200 V BYD17G − 400 V BYD17J − 600 V BYD17K − 800 V BYD17M − 1000 V repetitive peak reverse voltage crest working reverse voltage continuous reverse voltage 1999 Nov 11 2 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers SYMBOL IF(AV) BYD17 series PARAMETER CONDITIONS average forward current MIN. MAX. UNIT Ttp = 105 °C; averaged over any 20 ms period; see Figs 2 and 4 − 1.5 A Tamb = 65 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.6 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 20 ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. IF = 1 A; Tj = Tj max; see Fig.6 − − 0.93 V IF = 1 A; see Fig.6 − − 1.05 V BYD17D 225 − − V BYD17G 450 − − V see Fig.5 A ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER CONDITIONS forward voltage reverse avalanche breakdown voltage UNIT IR = 0.1 mA BYD17J 650 − − V BYD17K 900 − − V BYD17M 1100 − − V VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 100 µA reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance − 21 − pF VR = 0 V; f = 1 MHz; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE 30 K/W 150 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1999 Nov 11 3 UNIT Philips Semiconductors Product specification General purpose controlled avalanche rectifiers BYD17 series GRAPHICAL DATA MBH394 3 MSC293 1.0 handbook, halfpage IF(AV) (A) IF(AV) 0.8 (A) 2 0.6 0.4 1 0.2 0 0 0 40 120 80 0 160 200 Ttp (°C) 120 80 160 200 Tamb (°C) a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. a = 1.57; VR = VRRMmax; δ = 0.5. Fig.2 40 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGC736 MBH395 2.5 P (W) 200 handbook, halfpage handbook, halfpage Tj a = 3 2.5 2.0 2 1.57 1.42 ( oC) 150 1.5 100 1.0 D G J K M 50 0.5 0 0 0.4 0.8 1.2 0 1.6 IF(AV) (A) 0 400 800 1200 VR, VRRM (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1999 Nov 11 Fig.5 4 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification General purpose controlled avalanche rectifiers BYD17 series MBG048 MGC739 3 10halfpage handbook, 6 handbook, halfpage IR (µA) IF (A) 4 10 2 10 2 0 1 0 1 2 VF (V) 0 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. VR = VRRMmax. Fig.6 Fig.7 Forward current as a function of forward voltage; maximum values. 40 80 120 160 200 Tj (oC) Reverse current as a function of junction temperature; maximum values. MGC740 10 2 handbook, halfpage 50 Cd (pF) 4.5 10 50 2.5 1 1 10 102 VR (V) 103 1.25 MSB213 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1999 Nov 11 Fig.9 5 Printed-circuit board for surface mounting. Philips Semiconductors Product specification General purpose controlled avalanche rectifiers handbook, full pagewidth BYD17 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1999 Nov 11 6 MAM057 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers BYD17 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Nov 11 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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