DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification 1996 May 24 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series FEATURES DESCRIPTION • Glass passivated DO-214AC; SOD106 surface mountable package with glass passivated chip. • High maximum operating temperature The well-defined void-free case is of a transfer-moulded thermo-setting plastic. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability cathode band handbook, 4 columns • UL 94V-O classified plastic package k a • Shipped in 12 mm embossed tape. Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS IF(AV) IFSM MAX. UNIT − 200 V repetitive peak reverse voltage BYG50D VR MIN. BYG50G − 400 V BYG50J − 600 V BYG50K − 800 V BYG50M − 1000 V BYG50D − 200 V BYG50G − 400 V continuous reverse voltage BYG50J − 600 V BYG50K − 800 V BYG50M − 1000 V average forward current non-repetitive peak forward current 1996 May 24 averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 − 2.1 A averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 − 1.0 A averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 − 0.7 A t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 2 30 A Philips Semiconductors Preliminary specification Controlled avalanche rectifiers SYMBOL BYG50 series MIN. MAX. BYG50D to J − 10 mJ BYG50K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. IF = 1 A; Tj = Tj max; see Fig.5 − − 0.85 V IF = 1 A; see Fig.5 − − 1.00 V BYG50D 300 − − V BYG50G 500 − − V ERSM PARAMETER CONDITIONS non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.4 UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER CONDITIONS forward voltage reverse avalanche breakdown voltage UNIT IR = 0.1 mA BYG50J 700 − − V BYG50K 900 − − V BYG50M 1100 − − V − − 1 VR = VRRMmax; Tj = 165 °C; see Fig.6 − − 100 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 − 2 IR reverse current trr reverse recovery time VR = VRRMmax; see Fig.6 µA µA − µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS VALUE UNIT 25 K/W note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the “General Part of associated Handbook”. 1996 May 24 3 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series GRAPHICAL DATA MBH396 4 MBH397 2.0 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.6 3 1.2 2 0.8 1 0.4 0 0 0 40 80 120 160 200 Ttp (°C) 0 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MGD483 120 160 200 Tamb (°C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBH398 10 200 Tj (°C) handbook, halfpage handbook, halfpage IF (A) 160 8 120 6 80 4 D G J K M 2 40 0 0 0 400 800 VR (V) 0 1200 0.8 1.2 1.6 2.0 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Dotted line: epoxy PCB. Maximum permissible junction temperature as a function of reverse voltage. 1996 May 24 0.4 VF (V) Device mounted as shown in Fig.7. Solid line: Al2O3 PCB. Fig.4 80 VR = VRRMmax; δ = 0.5; a = 1.57. Device mounted as shown in Fig.7 Solid line: Al2O3 PCB; dotted line: epoxy PCB. VR = VRRMmax; δ = 0.5; a = 1.57. Fig.2 40 Fig.5 4 Forward current as a function of forward voltage; maximum values. Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series MGC739 3 10halfpage handbook, 50 IR (µA) 10 2 4.5 50 10 2.5 1 0 40 80 120 1.25 160 200 Tj (oC) MSB213 VR = VRMMmax. Dimensions in mm. Fig.6 Reverse current as a function of junction temperature; maximum values. handbook, full pagewidth Fig.7 IF (A) DUT + 10 Ω Printed-circuit board for surface mounting. 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 May 24 5 MAM057 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series PACKAGE OUTLINE 5.5 5.1 4.5 4.3 handbook, full pagewidth 2.3 2.0 0.05 2.8 1.6 2.4 1.4 , , , , 0.2 3.3 2.7 MSA414 Dimensions in mm. Fig.9 SOD106. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 6