Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES BYV29-600 SYMBOL QUICK REFERENCE DATA VR = 600V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance k 1 VF ≤ 1.03 V a 2 IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV29-600 is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR IF(AV) Average forward current1 IFRM IFSM Tstg Tj CONDITIONS MIN. MAX. UNIT Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage - 600 600 600 V V V square wave; δ = 0.5; Tmb ≤ 120 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; with reapplied VRRM(max) Storage temperature Operating junction temperature - 9 A - 18 A - 70 77 A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air. MIN. TYP. MAX. UNIT - - 2.5 K/W - 60 - K/W 1 Neglecting switching and reverse current losses. February 2000 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29-600 ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs February 2000 2 MIN. TYP. MAX. UNIT - 0.90 1.05 1.30 2.0 0.1 40 1.03 1.25 1.45 50 0.35 70 V V V µA mA nC - 50 60 ns - 3.0 5.5 A - 3.2 - V Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast I dI F BYV29-600 F Forward dissipation, PF (W) Ths(max) (C) 18 dt 16 t 1.9 14 rr a = 1.57 2.8 120 12 time 110 2.2 4 10 130 8 6 Q I I R 2 150 0 rrm 0 2 4 6 8 10 Average forward current, IF(AV) (A) 12 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.1. Definition of trr, Qs and Irrm I 140 4 100% 10% s F trr / ns 1000 10A time 100 VF 1A V Tj = 25 C Tj = 150 C fr VF time 10 Forward dissipation, PF (W) -diF/dt 10 Fig.2. Definition of Vfr 100 Fig.5. Maximum trr at Tj = 25˚C and 100˚C Ths(max) (C) 10 20 Irrm / A IF=10A D = 1.0 15 112.5 1 0.5 10 0.2 IF=1A 125 0.1 tp D = tp/T 0.1 137.5 5 T 150 0 0 2 4 6 8 10 Average forward current, IF(AV) (A) 12 0.01 14 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. February 2000 Tj = 25 C Tj = 100C 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast 30 BYV29-600 BYW29 IF / A 1000 Qs / nC Tj=150 C 10A Tj=25 C 2A 20 10A 100 IF=2A typ max 10 10 0 0 0.5 1.5 1 VF / V 25 C 150 C 1 2 1 100 -diF / dt 10 100 Fig.9. Maximum Qs at Tj = 25˚C Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Cd / pF 10 Transient thermal impedance, Zth j-mb (K/W) 1 10 0.1 PD 0.01 tp D= 1 1 10 VR / V 100 1000 0.001 1us Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C February 2000 T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.10. Transient thermal impedance Zth j-mb= f(tp) 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29-600 MECHANICAL DATA Dimensions in mm Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220 SOD59 Net Mass: 2 g E A A1 P q D1 D L1 L2(1) Q b1 L 1 2 b c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 e L L1 5.08 15.0 13.5 3.30 2.79 L2 (1) 3.0 P q Q 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOD59 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 2-lead TO-220 ISSUE DATE 97-06-11 Fig.11. TO220AC; pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 2000 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29-600 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 2000 6 Rev 1.100