PHILIPS BTA201W-800E

BTA201W series E
1 A Three-quadrant triacs high commutation
Rev. 03 — 13 March 2008
Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a surface-mounted plastic package,
intended for interfacing with low-power drivers, including microcontrollers.
1.2 Features
n Suitable for interfacing with low-power
drivers, including microcontrollers
n SOT223 surface mounted
1.3 Applications
n Motor control
n Solenoid drivers
1.4 Quick reference data
n
n
n
n
ITSM ≤ 12.5 A
IT(RMS) ≤ 1 A
VDRM ≤ 600 V (BTA201W-600E)
VDRM ≤ 800 V (BTA201W-800E)
n
n
n
n
IGT ≤ 10 mA (BTA201W-600E)
IGT ≤ 10 mA (BTA201W-800E)
IGT ≥ 1 mA (BTA201W-600E)
IGT ≥ 1 mA (BTA201W-800E)
2. Pinning information
Table 1.
Pinning
Pin
Description
1
main terminal 1 (T1)
2
main terminal 2 (T2)
3
gate (G)
4
main terminal 2 (T2)
Simplified outline
Symbol
4
T2
T1
G
sym051
1
2
SOT223
3
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
3. Ordering information
Table 2.
Ordering information
Type number
Package
BTA201W-600E
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink; 4 leads
SOT223
BTA201W-800E
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
repetitive peak off-state voltage
Conditions
Min
Max
Unit
-
600
V
BTA201W-800E
-
800
V
-
1
A
t = 20 ms
-
12.5
A
t = 16.7 ms
-
13.7
A
tp = 10 ms
-
0.78
A2s
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
-
100
A/µs
BTA201W-600E
IT(RMS)
RMS on-state current
full sine wave; Tsp ≤ 106 °C;
see Figure 4 and 5
ITSM
non-repetitive peak on-state current
full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
[1]
I2t
I2t
dIT/dt
rate of rise of on-state current
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.1
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C
[1]
for fusing
over any 20 ms period
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
2 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
003aab299
1.5
α
Ptot
(W)
α = 180°
α
120°
90°
1.0
60°
30°
0.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
IT(RMS) (A)
α = conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
001aag959
16
ITSM
(A)
12
8
ITSM
IT
4
t
T
Tj(init) = 25 °C max
0
1
102
10
103
number of cycles (n)
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
3 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
001aag958
103
ITSM
IT
t
ITSM
(A)
T
Tj(init) = 25 °C max
(1)
102
10
10−5
10−4
10−3
10−2
10−1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
001aag963
6
IT(RMS)
(A)
001aag964
1.2
IT(RMS)
(A)
1.0
0.8
4
0.6
0.4
2
0.2
0
10−2
10−1
0
−50
1
10
surge duration (s)
0
50
100
150
Tsp (°C)
f = 50 Hz; Tsp = 106 °C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of solder
point temperature; maximum values
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
4 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance from
junction to solder point
see Figure 6
-
-
15
K/W
Rth(j-a)
thermal resistance from
junction to ambient
minimum footprint; see Figure 14
[1]
-
156
-
K/W
for pad area; see Figure 15
[1]
-
70
-
K/W
[1]
Mounted on a printed-circuit board.
001aag969
102
Zth(j-sp)
(K/W)
10
(1)
1
(2)
P
10−1
10−2
10−5
tp
10−4
10−3
10−2
10−1
1
t
10
tp (s)
(1) Unidirectional
(2) Bidirectional
Fig 6.
Transient thermal impedance from junction to solder point as a function of pulse width
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
5 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
T2+ G+
1
-
10
mA
T2+ G−
1
-
10
mA
T2− G−
1
-
10
mA
T2+ G+
-
-
12
mA
T2+ G−
-
-
20
mA
T2− G−
-
-
12
mA
BTA201W-600E and BTA201W-800E
IGT
IL
gate trigger current
latching current
VD = 12 V; IT = 0.1 A; see Figure 8
VD = 12 V; IG = 0.1 A; see Figure 10
IH
holding current
VD = 12 V; IG = 0.1 A; see Figure 11
-
-
12
mA
VT
on-state voltage
IT = 1.4 A; see Figure 9
-
1.2
1.5
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; see Figure 7
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.2
0.3
-
V
VD = VDRM(max); Tj = 125 °C
-
0.1
0.5
mA
ID
off-state current
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
6 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6.
Dynamic characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
600
-
-
V/µs
dVcom/dt = 20 V/µs
2.5
-
-
A/ms
dVcom/dt = 10 V/µs
3.5
-
-
A/ms
-
2
-
µs
BTA201W-600E and BTA201W-800E
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67VDRM(max); Tj = 125 °C;
exponential waveform; gate open circuit
dIcom/dt
rate of change of
commutating current
VDM = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
gate open circuit
gate-controlled turn-on
time
tgt
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
001aab101
1.6
003aaa959
3
VGT
IGT
VGT(25°C)
IGT(25°C)
1.2
2
(1)
(2)
(3)
0.8
1
(3)
(2)
(1)
0.4
−50
0
50
100
0
−50
150
Tj (°C)
0
50
100
Tj (°C)
150
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function
of junction temperature
Fig 8.
Normalized gate trigger current as a function
of junction temperature
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
7 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
003aaa960
2
001aab100
3
IT
(A)
IL
IL(25°C)
1.6
2
1.2
(1)
(2)
0.8
(3)
1
0.4
0
0
0.4
0.8
1.2
1.6
2
0
−50
0
50
100
150
Tj (°C)
VT (V)
Vo = 1.02 V; Rs = 358 mΩ
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9.
On-state current as a function of on-state
voltage
001aab099
3
Fig 10. Normalized latching current as a function of
junction temperature
dVD/dt
(V/µs)
IH
IH(25°C)
2
103
1
102
0
−50
001aag740
104
10
0
50
100
150
0
50
Tj (°C)
100
150
Tj (°C)
Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
8 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
8. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT223
JEDEC
JEITA
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
Fig 13. Package outline SOT223
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
9 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
9. Mounting
9.1 Mounting instructions
3.8 min
1.5
min
6.3
1.5
min
(3×)
2.3
1.5
min
4.6
001aab508
All dimensions are in mm
Fig 14. Minimum footprint SOT223
9.2 Printed-circuit board
36
18
60
4.5
4.6
9
10
7
15
50
001aab509
All dimensions are in mm
Printed-circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick)
Fig 15. Printed-circuit board pad area SOT223
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
10 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
10. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BTA201W_SER_E_3
20080313
Product data sheet
-
BTA201W_SER_E_2
Modifications:
BTA201W_SER_E_2
Modifications:
BTA201W_SER_E_1
•
•
•
Section 1.4 “Quick reference data” on page 1: Updated with minimum IGT values added.
Table 3 “Limiting values” on page 2: I2t condition, tp; symbol update.
Table 5 “Static characteristics” on page 6: Minimum IG values added.
20070917
Product data sheet
BTA201W_SER_E_1
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Descriptive titles have been corrected.
Table 3 “Limiting values” on page 2: dIT/dt uprated
Table 6 “Dynamic characteristics” on page 7: dVD/dt uprated
Figure “Critical rate of rise of off-state voltage as a function of junction temperature;
minimum values” on page 8: graph updated
20060207
Product data sheet
BTA201W_SER_3
Product data sheet
-
•
-
-
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
11 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BTA201W_SER_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 13 March 2008
12 of 13
BTA201W series E
NXP Semiconductors
1 A Three-quadrant triacs high commutation
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Mounting instructions . . . . . . . . . . . . . . . . . . . 10
Printed-circuit board . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 March 2008
Document identifier: BTA201W_SER_3