BLF578 Power LDMOS transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation pulsed RF f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 1200 24 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: u Output power = 1200 W u Power gain = 24 dB u Efficiency = 70 % n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (10 MHz to 500 MHz) n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n Industrial, scientific and medical applications n Broadcast transmitter applications BLF578 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF578 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 110 V VGS gate-source voltage −0.5 +11 V ID drain current - 112 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 2 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] Conditions thermal resistance from junction to case Tcase = 80 °C; PL = 1200 W; tp = 100 µs; δ = 20 % [1] Typ Unit 0.03 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA 110 - - V 1.7 2.25 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 500 mA 1.25 VGSq gate-source quiescent voltage VDS = 50 V; ID = 20 mA <tbd> <tbd> <tbd> V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 58 75 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 16.66 A - 0.07 - Ω Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 3 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 403 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 138 - pF Table 7. RF characteristics Mode of operation: pulsed RF; tp = 100 µs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Max Unit PL = 1200 W <tbd> 24 <tbd> dB Gp power gain RLin input return loss PL = 1200 W <tbd> 25 - dB ηD drain efficiency PL = 1200 W <tbd> 70 - % BLF578_1 Objective data sheet Typ © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 3 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 001aaj113 900 Coss (pF) 750 600 450 300 150 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 225 MHz. BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 4 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 7. Application information 7.1 Reliability 001aaj114 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 20 Idc (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 2. BLF578 electromigration (ID, total device) BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 5 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 8. Test information 8.1 Impedance information Table 8. Typical impedance Simulated ZS and ZL test circuit impedances. f ZS ZL MHz Ω Ω 225 3.2 + j2.6 3.7 − j0.2 drain ZL gate ZS 001aaf059 Fig 3. Definition of transistor impedance BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 6 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW pulsed 001aaj119 26 ηD (%) Gp (dB) 001aaj120 28 80 Gp (dB) Gp 24 60 26 22 40 24 20 20 22 (5) (4) ηD 18 100 300 500 700 900 1100 0 1300 1500 PL (W) VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs; δ = 20 %. (3) (2) (1) 20 100 300 500 700 900 1100 1300 1500 PL (W) VDS = 50 V; f = 225 MHz; tp = 100 µs; δ = 20 %. (1) IDq = 0 mA (2) IDq = 20 mA (3) IDq = 40 mA (4) IDq = 80 mA (5) IDq = 150 mA Fig 4. Power gain and drain efficiency as functions of load power; typical values Fig 5. Pulsed power gain as function of load power; typical values BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 7 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 001aaj121 26 001aaj122 66 Gp (dB) PL (dBm) 24 64 ideal PL (2) (3) 22 62 (1) (2) PL (1) 20 60 18 100 58 300 500 700 900 1100 1300 1500 PL (W) 34 36 38 40 Ps (dBm) VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs; δ = 20 %. VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs; δ = 20 %. (1) VDS = 40 V (1) PL(1dB) = 61.1 dBm (1300 W) (2) VDS = 45 V (2) PL(3dB) = 61.5 dBm (1425 W) (3) VDS = 50 V Fig 6. Pulsed power gain as function of load power; typical values Fig 7. Load Power as function of source power; typical values 8.3 Test circuit Table 9. List of components For production test circuit, see Figure 8 and Figure 9. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component Description Value Remarks C1, C2, C11, C12 multilayer ceramic chip capacitor 4.7 µF TDK4532X7R1E475Mt020U C2, C3, C27, C28 multilayer ceramic chip capacitor 100 nF C5, C7, C8, C21, C22 multilayer ceramic chip capacitor 1 nF [1] C6 multilayer ceramic chip capacitor 30 pF [1] C9, C10, C13, C15 multilayer ceramic chip capacitor 62 pF [1] C14 multilayer ceramic chip capacitor 36 pF [1] C16, C17 multilayer ceramic chip capacitor 24 pF [1] C18 multilayer ceramic chip capacitor 30 pF [1] C19 multilayer ceramic chip capacitor 27 pF [1] C20 multilayer ceramic chip capacitor 9.1 pF [1] C23 multilayer ceramic chip capacitor 13 pF [1] C24 multilayer ceramic chip capacitor 16 pF [1] C25, C26 electrolytic capacitor 220 µF; 63 V L1, L2 3 turns 1 mm copper wire D = 2 mm; length = 3 mm L3, L12 stripline - (L × W) 15 mm × 2.4 mm L4, L5, L10, L11 stripline - (L × W) 47 mm × 10 mm BLF578_1 Objective data sheet Murata X7R 250 V © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 8 of 14 BLF578 NXP Semiconductors Power LDMOS transistor Table 9. List of components …continued For production test circuit, see Figure 8 and Figure 9. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component Description Value Remarks (L × W) 8 mm × 15 mm L6, L7, L8, L9 stripline - R1, R2 metal film resistor 2 Ω; 0.6 W R3, R4 metal film resistor 20 Ω; 0.6 W R5, R6 metal film resistor 1 Ω; 0.6 W T1, T2 semi rigid coax 50 Ω; 58 mm [1] EZ-141-AL-TP-M17 American Technical Ceramics type 100B or capacitor of same quality. VDD VGG C25 C1 C11 C28 C2 R3 R1 T2 R5 L1 C13 input 50 Ω C7 C5 L3 C9 L4 L6 L8 L5 L7 L9 L10 C17 C19 L11 C16 C18 C20 C21 L12 C24 output 50 Ω C14 C8 C6 C10 C22 C23 C15 R2 T1 R4 R6 L2 C27 C3 C12 C26 C4 VDD VGG 001aaj123 See Table 9 for a list of components. Fig 8. Class-AB common-source production test circuit BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 9 of 14 BLF578 NXP Semiconductors Power LDMOS transistor C25 C11 T2 C1 C2 R1 R3 C7 C5 C9 C6 C13 C14 C21 C17 C19 C23 C10 C8 R4 C15 R2 C3 C4 T1 C28 L1 R5 C24 C16 C18 C20 C22 R6 L2 C27 C12 C26 001aaj124 See Table 9 for a list of components. Fig 9. Component layout for class-AB production test circuit BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 10 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 e E E1 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 mm inches 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 p Q q 3.30 3.05 2.31 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 SOT539A Fig 10. Package outline SOT539A BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 11 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TTF Time To Failure VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF578_1 20081211 Objective data sheet - - BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 12 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 13 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 8 8.1 8.2 8.2.1 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Impedance information . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2008 Document identifier: BLF578_1