PHILIPS BLF578

BLF578
Power LDMOS transistor
Rev. 01 — 11 December 2008
Objective data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1.
Production test information
Mode of operation
pulsed RF
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
225
50
1200
24
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 µs with δ of 20 %:
u Output power = 1200 W
u Power gain = 24 dB
u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (10 MHz to 500 MHz)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n Industrial, scientific and medical applications
n Broadcast transmitter applications
BLF578
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
1
Graphic symbol
1
2
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF578
Package
Name
Description
Version
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
112
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLF578_1
Objective data sheet
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Rev. 01 — 11 December 2008
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BLF578
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
[1]
Conditions
thermal resistance from junction to case Tcase = 80 °C; PL = 1200 W;
tp = 100 µs; δ = 20 %
[1]
Typ
Unit
0.03
K/W
Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.5 mA
110
-
-
V
1.7
2.25
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 500 mA
1.25
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 20 mA
<tbd> <tbd> <tbd> V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
58
75
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 16.66 A
-
0.07
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
403
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
138
-
pF
Table 7.
RF characteristics
Mode of operation: pulsed RF; tp = 100 µs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min
Max
Unit
PL = 1200 W
<tbd> 24
<tbd> dB
Gp
power gain
RLin
input return loss
PL = 1200 W
<tbd> 25
-
dB
ηD
drain efficiency
PL = 1200 W
<tbd> 70
-
%
BLF578_1
Objective data sheet
Typ
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
3 of 14
BLF578
NXP Semiconductors
Power LDMOS transistor
001aaj113
900
Coss
(pF)
750
600
450
300
150
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W
pulsed; f = 225 MHz.
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
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BLF578
NXP Semiconductors
Power LDMOS transistor
7. Application information
7.1 Reliability
001aaj114
105
Years
(1) (2) (3) (4) (5) (6)
104
103
102
(7) (8) (9) (10) (11)
10
1
0
4
8
12
16
20
Idc (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 2.
BLF578 electromigration (ID, total device)
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
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BLF578
NXP Semiconductors
Power LDMOS transistor
8. Test information
8.1 Impedance information
Table 8.
Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
3.2 + j2.6
3.7 − j0.2
drain
ZL
gate
ZS
001aaf059
Fig 3.
Definition of transistor impedance
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
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BLF578
NXP Semiconductors
Power LDMOS transistor
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW pulsed
001aaj119
26
ηD
(%)
Gp
(dB)
001aaj120
28
80
Gp
(dB)
Gp
24
60
26
22
40
24
20
20
22
(5)
(4)
ηD
18
100
300
500
700
900
1100
0
1300 1500
PL (W)
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs;
δ = 20 %.
(3)
(2)
(1)
20
100
300
500
700
900
1100
1300 1500
PL (W)
VDS = 50 V; f = 225 MHz; tp = 100 µs; δ = 20 %.
(1) IDq = 0 mA
(2) IDq = 20 mA
(3) IDq = 40 mA
(4) IDq = 80 mA
(5) IDq = 150 mA
Fig 4.
Power gain and drain efficiency as functions of
load power; typical values
Fig 5.
Pulsed power gain as function of load power;
typical values
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
7 of 14
BLF578
NXP Semiconductors
Power LDMOS transistor
001aaj121
26
001aaj122
66
Gp
(dB)
PL
(dBm)
24
64
ideal PL
(2)
(3)
22
62
(1)
(2)
PL
(1)
20
60
18
100
58
300
500
700
900
1100
1300 1500
PL (W)
34
36
38
40
Ps (dBm)
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs;
δ = 20 %.
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs;
δ = 20 %.
(1) VDS = 40 V
(1) PL(1dB) = 61.1 dBm (1300 W)
(2) VDS = 45 V
(2) PL(3dB) = 61.5 dBm (1425 W)
(3) VDS = 50 V
Fig 6.
Pulsed power gain as function of load power;
typical values
Fig 7.
Load Power as function of source power;
typical values
8.3 Test circuit
Table 9.
List of components
For production test circuit, see Figure 8 and Figure 9.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
Component
Description
Value
Remarks
C1, C2, C11, C12
multilayer ceramic chip capacitor
4.7 µF
TDK4532X7R1E475Mt020U
C2, C3, C27, C28
multilayer ceramic chip capacitor
100 nF
C5, C7, C8, C21, C22
multilayer ceramic chip capacitor
1 nF
[1]
C6
multilayer ceramic chip capacitor
30 pF
[1]
C9, C10, C13, C15
multilayer ceramic chip capacitor
62 pF
[1]
C14
multilayer ceramic chip capacitor
36 pF
[1]
C16, C17
multilayer ceramic chip capacitor
24 pF
[1]
C18
multilayer ceramic chip capacitor
30 pF
[1]
C19
multilayer ceramic chip capacitor
27 pF
[1]
C20
multilayer ceramic chip capacitor
9.1 pF
[1]
C23
multilayer ceramic chip capacitor
13 pF
[1]
C24
multilayer ceramic chip capacitor
16 pF
[1]
C25, C26
electrolytic capacitor
220 µF; 63 V
L1, L2
3 turns 1 mm copper wire
D = 2 mm; length = 3 mm
L3, L12
stripline
-
(L × W) 15 mm × 2.4 mm
L4, L5, L10, L11
stripline
-
(L × W) 47 mm × 10 mm
BLF578_1
Objective data sheet
Murata X7R 250 V
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
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BLF578
NXP Semiconductors
Power LDMOS transistor
Table 9.
List of components …continued
For production test circuit, see Figure 8 and Figure 9.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
Component
Description
Value
Remarks
(L × W) 8 mm × 15 mm
L6, L7, L8, L9
stripline
-
R1, R2
metal film resistor
2 Ω; 0.6 W
R3, R4
metal film resistor
20 Ω; 0.6 W
R5, R6
metal film resistor
1 Ω; 0.6 W
T1, T2
semi rigid coax
50 Ω; 58 mm
[1]
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
VDD
VGG
C25
C1
C11
C28
C2
R3
R1
T2
R5
L1
C13
input
50 Ω
C7
C5
L3
C9
L4
L6
L8
L5
L7
L9
L10
C17 C19
L11
C16 C18 C20
C21
L12
C24
output
50 Ω
C14
C8
C6
C10
C22
C23
C15
R2
T1
R4
R6
L2
C27
C3
C12
C26
C4
VDD
VGG
001aaj123
See Table 9 for a list of components.
Fig 8.
Class-AB common-source production test circuit
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
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BLF578
NXP Semiconductors
Power LDMOS transistor
C25
C11
T2
C1
C2
R1
R3
C7
C5
C9
C6
C13
C14
C21
C17 C19
C23
C10
C8
R4
C15
R2
C3
C4
T1
C28
L1
R5
C24
C16 C18 C20
C22
R6
L2
C27
C12
C26
001aaj124
See Table 9 for a list of components.
Fig 9.
Component layout for class-AB production test circuit
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
10 of 14
BLF578
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
e
E
E1
9.50
5.33 11.81 0.15 31.55 31.52
13.72
9.30
3.96 11.56 0.08 30.94 30.96
mm
inches
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.73
1.50 16.10 25.27 2.72
p
Q
q
3.30
3.05
2.31
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.210 0.465 0.006 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.156 0.455 0.003 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079
1.615 0.395
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
00-03-03
SOT539A
Fig 10. Package outline SOT539A
BLF578_1
Objective data sheet
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Rev. 01 — 11 December 2008
11 of 14
BLF578
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
TTF
Time To Failure
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF578_1
20081211
Objective data sheet
-
-
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
12 of 14
BLF578
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF578_1
Objective data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 11 December 2008
13 of 14
BLF578
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
8
8.1
8.2
8.2.1
8.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 5
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Impedance information . . . . . . . . . . . . . . . . . . . 6
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2008
Document identifier: BLF578_1