BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs; δ = 2 %. Mode of operation Pulsed class-AB f IDq VDS PL Gp ηD (MHz) (mA) (V) (W) (dB) (%) 1030 to 1090 150 32 300 16.5 57 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %: u Output power = 300 W u Power gain = 16.5 dB (typ) u Efficiency = 57 % (typ) n Easy power control n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for operation in 1030 MHz to 1090 MHz band n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency band BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number Package BLA1011-300 Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT957A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS Conditions Min Max Unit drain-source voltage - 65 V gate-source voltage −0.5 +15 V ID drain current - 15 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Max Unit Zth(j-h) transient thermal impedance from junction to heatsink Tcase = 25 °C; tp = 50 µs; δ = 2 %; PL = 300 W 0.1 0.15 K/W BLA1011-300_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 2 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA 65 - - V VDS = 20 V; ID = 375 mA 5.2 5.6 6.2 V VGS(th) gate-source threshold voltage VGSq gate-source quiescent VDS = 32 V; ID = 150 mA voltage - 5.48 - V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 3.3 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 50 63 73 A IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 60 nA gfs forward transconductance VDS = 20 V; ID = 24 A - 15 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID =13.5 A - 55 80 mΩ 7. Application information Table 7. Application information Mode of operation: Pulsed RF; tp = 50 µs; δ = 2 %; VDS = 32 V; IDq = 150 mA; Tcase = 25 °C; unless otherwise specified. Symbol Parameter PL output power Conditions Typ Max Unit 300 - - W Gp power gain PL = 300 W 15 16.5 - dB RLin input return loss PL = 300 W - 10 - dB ηD drain efficiency PL = 300 W 52 57 - % tr rise time PL = 300 W - 30 50 ns tf fall time PL = 300 W - 5 50 ns Pdroop(pulse) pulse droop power PL = 300 W - 0 0.2 dB BLA1011-300_2 Product data sheet Min © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 3 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors Table 8. Typical impedance f ZS ZL MHz Ω Ω 1030 4.25 − j3.57 1.27 − j0.33 1060 4.24 − j3.56 1.04 − j0.41 1090 4.47 − j3.71 0.91 − j0.60 drain ZL gate ZS 001aag189 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLA1011-300 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 150 mA; PL = 300 W; f = 1030 MHz to 1090 MHz. 001aag190 80 001aag191 20 Gp (dB) ηD (%) (2) (3) (1) 16 60 12 (1) (2) (3) 40 8 20 4 0 0 0 100 200 300 400 0 100 PL (W) 300 400 PL (W) (1) f = 1030 MHz (1) f = 1030 MHz (2) f = 1060 MHz (2) f = 1060 MHz (3) f = 1090 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 µs; δ = 2 %. Fig 2. Drain efficiency as functions of load power; typical values BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 µs; δ = 2 %. Fig 3. Power gain as a function of load power; typical values BLA1011-300_2 Product data sheet 200 © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 4 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 001aag192 400 Gp (dB) PL (W) 18 300 (3) (1) (2) 001aag193 20 70 ηD (%) ηD 60 Gp 16 50 14 40 12 30 200 100 0 0 2 4 6 8 10 10 1020 Pi (W) 1040 1060 20 1100 1080 f (MHz) VDS = 32 V; IDq = 150 mA; tp = 50 µs; δ = 2 %. (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 µs; δ = 2 %. Fig 4. Load power as a function of input power; typical values Fig 5. Power gain and drain efficiency as functions of frequency; typical values BLA1011-300_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 5 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 8. Test information C5 C8 R1 C9 C12 C10 C11 C6 L1 C7 R2 C2 C1 T3 T1 T4 T6 T2 T7 T8 C4 T5 C3 001aah710 Printed-Circuit Board (PCB): Rogers Duroid 6006; εr = 6.2 F/m; height = 0.64 mm. See Table 9 for list of components. Fig 6. Component layout for common source class-AB pulsed production test circuit Table 9. List of components (see Figure 6) To ensure good power supply of the device, adding an electrolytic capacitor close to the supply connection of the circuit may be required. The actual capacitor value may differ depending on the pulse format, the quality of the power supply and the length of the connecting wires to the power supply. In general a value of 470 µF will be sufficient. Component Description Value C1, C4 multilayer ceramic chip capacitor 62 pF C2, C3 multilayer ceramic chip capacitor 1.5 pF [2] C5 multilayer ceramic chip capacitor 100 pF [2] C6, C8 multilayer ceramic chip capacitor 62 pF [2] C7 multilayer ceramic chip capacitor 10 pF [2] C9 multilayer ceramic chip capacitor 1.2 nF [1] C10 electrolytic capacitor 47 µF; 20 V C11 electrolytic capacitor 47 µF; 63 V C12 multilayer ceramic chip capacitor 47 pF L1 Ω-shaped enameled copper wire d = 1 mm; length = 38 mm R1 SMD resistor 18 Ω BLA1011-300_2 Product data sheet Remarks [1] [1] 0508 package © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 6 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors Table 9. List of components (see Figure 6) …continued To ensure good power supply of the device, adding an electrolytic capacitor close to the supply connection of the circuit may be required. The actual capacitor value may differ depending on the pulse format, the quality of the power supply and the length of the connecting wires to the power supply. In general a value of 470 µF will be sufficient. Component Description Value R2 metal film resistor 49.9 Ω T1 stripline - (W × L) 5 mm × 9 mm T2 stripline - (W × L) 1.25 mm × 7.5 mm T3 stripline - (W × L) 15 mm × 11 mm T4 stripline - (W × L) 40 mm × 16.8 mm T5 stripline - (W × L) 1 mm × 6.25 mm T6 stripline - (W × L) 4.95 mm × 3.55 mm T7 stripline - (W × L) 9.4 mm × 3 mm T8 stripline - (W × L) 12 mm × 2.45 mm [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLA1011-300_2 Product data sheet Remarks © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 7 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT957A D A F 3 D1 U1 B q C c 1 L U2 H E1 p w1 A M A M B E M 2 w2 b 0 M C 5 Q M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H L P Q q U1 U2 w1 w2 mm 4.67 4.08 12.83 12.57 0.15 0.10 22.07 21.62 22.04 21.64 9.53 9.27 9.55 9.25 1.14 0.89 19.94 18.92 5.33 4.31 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.25 0.184 0.505 0.1605 0.495 0.006 0.004 0.869 0.851 0.868 0.852 0.375 0.365 0.376 0.364 0.045 0.035 0.785 0.745 0.210 0.170 0.133 0.123 0.067 0.057 1.100 1.345 1.335 0.390 0.380 0.01 0.01 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-06-29 07-03-01 SOT957A Fig 7. Package outline SOT957A BLA1011-300_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 8 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 10. Abbreviations Table 10. Abbreviations Acronym Description IFF Identification Friend or Foe LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA1011-300_2 20080205 Product data sheet - BLA1011-300_1 Modifications: BLA1011-300_1 • • Section 1.2 “Features” on page 1: added RoHS compliance statement Added Section 8 “Test information” on page 6. 20070403 Product data sheet BLA1011-300_2 Product data sheet - - © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 9 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLA1011-300_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 5 February 2008 10 of 11 BLA1011-300 NXP Semiconductors Avionics LDMOS transistors 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 5 February 2008 Document identifier: BLA1011-300_2