DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG3002AEB PINNING • Forward current: 0.2 A PIN • Reverse voltage: 30 V 1 cathode • Very low forward voltage 2 anode DESCRIPTION • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching • High efficiency DC/DC conversion 4 columns • Voltage clamping 1 2 • Inverse-polarity protection • Low voltage rectification MGU328 • Low power consumption applications. DESCRIPTION Marking code: B1. The marking bar indicates the cathode. Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package. Fig.1 Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp = 8.3 ms half sinewave; JEDEC method − 1 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 2002 May 06 2 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode PMEG3002AEB ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS TYP. MAX. UNIT see Fig.2 IF = 0.1 mA 130 190 mV IF = 1 mA 190 250 mV IF = 10 mA 255 300 mV IF = 100 mA 355 400 mV IF = 200 mA 420 480 mV IR continuous reverse current VR = 10 V; see Fig.3; note 1 2.5 10 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 20 25 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOD523 (SC-79) standard mounting conditions. 2002 May 06 3 VALUE UNIT 450 K/W Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode PMEG3002AEB GRAPHICAL DATA MHC187 104 handbook, halfpage MHC188 104 handbook, halfpage IF (mA) IR (µA) (1) 103 103 102 102 (2) (1) (2) (3) 10 10 (3) 1 0 0.2 0.4 0.8 0.6 1 1 0 10 VF (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC189 40 handbook, halfpage Cd 35 (pF) 30 25 20 15 10 5 0 0 10 20 30 VR (V) f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2002 May 06 4 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode PMEG3002AEB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.7 0.5 0.35 0.25 0.2 0.1 1.3 1.1 0.9 0.7 1.7 1.5 0.15 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 2002 May 06 REFERENCES IEC JEDEC EIAJ SC-79 5 EUROPEAN PROJECTION ISSUE DATE 98-11-25 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode PMEG3002AEB DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 May 06 6 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode PMEG3002AEB NOTES 2002 May 06 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 May 06 Document order number: 9397 750 09622