PHILIPS PMEG6010AED

DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D302
PMEG6010AED
Low VF (MEGA) Schottky barrier
diode
Product specification
2003 Jun 27
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
FEATURES
PMEG6010AED
PINNING
• Low switching losses
PIN
DESCRIPTION
• Very high surge current absorption capability
1
cathode
• Fast recovery time
2
cathode
• Guard ring protected
3
anode
• Plastic SMD package.
4
anode
5
cathode
6
cathode
APPLICATIONS
• Low power switched-mode power supplies
• Rectification
• Polarity protection.
handbook, halfpage 6
4
5
GENERAL DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT457
(SC-74) small plastic package.
1, 2
5, 6
1
2
3, 4
3
MHC634
Marking code: M4.
Fig.1
Simplified outline SOT457 (SC-74) and
symbol.
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
60
V
−
1
A
−
17.5
A
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward current t = 8 ms; square wave
IRSM
non-repetitive peak reverse current tp = 100 µs
−
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for cathode 6 cm2.
2003 Jun 27
2
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
VF
IR
Cd
PARAMETER
continuous forward voltage
continuous reverse current
diode capacitance
CONDITIONS
MAX.
UNIT
IF = 0.1 A
400
mV
IF = 1 A
650
mV
VR = 60 V; see Fig.3
350
µA
VR = 60 V; Tj = 100 °C;
notes 1 and 2
8
mA
VR = 4 V; f = 1 MHz; see Fig.4 60
pF
Notes
1. Pulse test: tp = 300 µs; δ = 0.02.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
PR are a significant part of the total power losses.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
in free air; note 1
230
K/W
in free air; note 2
180
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper; tinplated, mounting pad for cathode 6 cm2.
2003 Jun 27
3
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
GRAPHICAL DATA
MHC635
103
handbook, halfpage
MHC636
10−2
handbook, halfpage
IR
(A)
IF
(mA)
(1)
10−3
(2)
102
(3)
10−4
(1) (2) (3)
(4)
10
10−5
(4)
1
0
0.2
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Fig.2
0.4
VF (V)
10−6
0.6
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.3
MHC637
handbook, halfpage
Cd
(pF)
160
120
80
40
0
0
20
40
VR (V)
60
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 27
20
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Forward current as a function of forward
voltage; typical values.
200
0
4
40
VR (V)
60
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2003 Jun 27
REFERENCES
IEC
JEDEC
EIAJ
SC-74
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Jun 27
6
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
NOTES
2003 Jun 27
7
PMEG6010AED
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2003
Jun 27
Document order number:
9397 750 11455