PHILIPS PESD15VU1UT

PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 01 — 11 May 2005
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
■
■
■
■
Unidirectional ESD protection of one line
Ultra low diode capacitance: Cd = 0.6 pF
Max. peak pulse power: PPP up to 200 W
Low clamping voltage
■ ESD protection > 23 kV
■ IEC 61000-4-2; level 4 (ESD)
■ IEC 61000-4-5; (surge)
1.3 Applications
■ 10/100/1000 Ethernet
■ FireWire
■ Communication systems
■ Local Area Network (LAN) equipment
■ Computers and peripherals
■ High-speed datalines
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
PESD3V3U1UT
-
-
3.3
V
PESD5V0U1UT
-
-
5.0
V
PESD12VU1UT
-
-
12
V
PESD15VU1UT
-
-
15
V
PESD24VU1UT
Cd
[1]
diode capacitance
Measured from pin 1 to 2
f = 1 MHz; VR = 0 V
[1]
-
-
24
V
-
0.6
1.5
pF
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
1
cathode ESD protection diode
2
cathode compensation diode
3
common anode
Symbol
3
1
3
2
1
2
006aaa441
3. Ordering information
Table 3:
Ordering information
Type number
PESD3V3U1UT
Package
Name
Description
Version
-
plastic surface mounted package; 3 leads
SOT23
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
4. Marking
Table 4:
Marking codes
Type number
Marking code [1]
PESD3V3U1UT
*AP
PESD5V0U1UT
*AQ
PESD12VU1UT
*AR
PESD15VU1UT
*AS
PESD24VU1UT
*AT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
2 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
PESD3V3U1UT
-
80
W
PESD5V0U1UT
-
80
W
PESD12VU1UT
-
200
W
PESD15VU1UT
-
200
W
-
200
W
PESD3V3U1UT
-
5
A
PESD5V0U1UT
-
5
A
PESD12VU1UT
-
5
A
PESD15VU1UT
-
5
A
PESD24VU1UT
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
Parameter
Conditions
peak pulse power
8/20 µs
[1]
PESD24VU1UT
peak pulse current
IPP
[1]
8/20 µs
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
9397 750 14912
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
3 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
Table 6:
ESD maximum ratings
Symbol
Parameter
Conditions
Min
Max
Unit
PESD3V3U1UT
-
30
kV
PESD5V0U1UT
-
30
kV
PESD12VU1UT
-
30
kV
PESD15VU1UT
-
30
kV
PESD24VU1UT
-
23
kV
-
10
kV
electrostatic discharge voltage
VESD
PESDxU1UT
IEC 61000-4-2
(contact discharge)
HBM MIL-STD-883
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 2
Table 7:
[1] [2]
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD-883; class 3
> 4 kV
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
tr = 0.7 ns to 1 ns
0
0
10
20
30
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
9397 750 14912
Product data sheet
t
30 ns
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
4 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse stand-off voltage
Conditions
Min
Typ
Max
Unit
PESD3V3U1UT
-
-
3.3
V
PESD5V0U1UT
-
-
5.0
V
PESD12VU1UT
-
-
12
V
PESD15VU1UT
-
-
15
V
PESD24VU1UT
-
-
24
V
reverse leakage current
IRM
PESD3V3U1UT
VRWM = 3.3 V
-
0.25
2
µA
PESD5V0U1UT
VRWM = 5.0 V
-
0.03
1
µA
PESD12VU1UT
VRWM = 12 V
-
<1
50
nA
PESD15VU1UT
VRWM = 15 V
-
<1
50
nA
PESD24VU1UT
VRWM = 24 V
-
<1
50
nA
PESD3V3U1UT
5.8
6.4
6.9
V
PESD5V0U1UT
7.0
7.6
8.2
V
PESD12VU1UT
14.2
15.0
16.7
V
PESD15VU1UT
17.1
18.9
20.3
V
breakdown voltage
VBR
[2]
IR = 5 mA
PESD24VU1UT
25.4
27.8
30.3
V
-
0.6
1.5
pF
IPP = 1 A
-
-
9
V
IPP = 5 A
-
-
20
V
IPP = 1 A
-
-
12
V
IPP = 5 A
-
-
21
V
IPP = 1 A
-
-
23
V
IPP = 5 A
-
-
39
V
IPP = 1 A
-
-
28
V
IPP = 5 A
-
-
53
V
IPP = 1 A
-
-
40
V
IPP = 3 A
-
-
76
V
PESD3V3U1UT
-
-
400
Ω
PESD5V0U1UT
-
-
80
Ω
PESD12VU1UT
-
-
200
Ω
PESD15VU1UT
-
-
225
Ω
PESD24VU1UT
-
-
300
Ω
Cd
diode capacitance
VCL
clamping voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
differential resistance
rdif
[2]
f = 1 MHz; VR = 0 V
[1] [2]
IR = 1 mA
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 2
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
5 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
I
006aaa442
10
IR
IR(25˚C)
V
VCL VBR VRWM
−
IRM
IR
1
IPP
10−1
−100
+
P-N
−50
0
50
100
150
Tj (°C)
006aaa407
PESD3V3U1UT; PESD5V0U1UT
IR is less than 10 nA at 150 °C for:
PESD12VU1UT; PESD15VU1UT; PESD24VU1UT
Fig 3. V-I characteristics
Fig 4. Relative variation of reverse leakage current as
a function of junction temperature; typical
values
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
6 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
7. Application information
The PESDxU1UT series is designed for protection of high-speed datalines from damage
caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection
diode and an ultra low capacitance compensation diode to ensure an effective device
capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability of up to
200 W per line for an 8/20 µs waveform.
protected data line
n.c.
2
1
1
2
3
3
n.c.
ground
PESDxU1UT
PESDxU1UT
006aaa443
Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a
common-mode application.
The two PESDxU1UT devices should be connected as follows:
protected data line is connected to
device 1 / pin 2
device 2 / pin 1
Ground is connected to
device 1 / pin 1
device 2 / pin 2
pin 3 is not connected for both devices
Fig 5. Bi-directional ESD protection of one line, common mode
I/O 1
ETHERNET
TRANSCEIVER
n.c.
2
1
1
2
3
3
n.c.
I/O 2
PESDxU1UT
PESDxU1UT
006aaa444
Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a
differential-mode configuration as e.g. for Ethernet applications.
The two PESDxU1UT should be connected as follows:
I/O line 1 is connected to
device 1 / pin 2
device 2 / pin 1
I/O line 2 is connected to
device 1 / pin 1
device 2 / pin 2
pin 3 is not connected for both devices
Fig 6. Differential mode Ethernet protection
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
7 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxU1UT as close to the input terminal or connector as possible.
2. The path length between the PESDxU1UT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
8 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
8. Test information
ESD TESTER
RZ
450 Ω
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.
(Device
Under
Test)
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD24VU1UT
GND
PESD15VU1UT
GND
PESD12VU1UT
GND
PESD5V0U1UT
GND
GND
PESD3V3U1UT
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa445
Fig 7. ESD clamping test set-up and waveforms
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
9 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
0.15
0.09
Dimensions in mm
04-11-04
Fig 8. Package outline SOT23 (TO-236AB)
10. Packing information
Table 9:
Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code. [1]
Type number
PESD3V3U1UT
Package
SOT23
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
[1]
For further information and the availability of packing methods, see Section 16.
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
10 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
11. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PESDXU1UT_SER_1
20050511
Product data sheet
-
9397 750 14912
-
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
11 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
14. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14912
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 May 2005
12 of 13
PESDxU1UT series
Philips Semiconductors
Ultra low capacitance ESD protection diode in SOT23 package
17. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 11 May 2005
Document number: 9397 750 14912
Published in The Netherlands