DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package FEATURES PESD3V3L5UV; PESD5V0L5UV QUICK REFERENCE DATA • Uni-directional ESD protection of up to five lines SYMBOL • Bi-directional ESD protection of up to four lines VRWM • Low diode capacitance PARAMETER UNIT reverse standoff voltage • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A VALUE Cd PESD3V3L5UV 3.3 V PESD5V0L5UV 5 V diode capacitance • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V PESD3V3L5UV 22 pF • ESD protection > 20 kV PESD5V0L5UV 16 pF • IEC 61000-4-2; level 4 (ESD) number of protected lines 5 • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs. PINNING APPLICATIONS PIN • Cellular handsets and accessories DESCRIPTION 1 cathode 1 2 common anode • Computers and peripherals 3 cathode 2 • Communications systems 4 cathode 3 • Audio and video equipment. 5 cathode 4 6 cathode 5 • Portable electronics DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD). 6 5 4 1 3 4 MARKING 5 MARKING CODE(1) TYPE NUMBER PESD3V3L5UV *E1 PESD5V0L5UV *E2 2 6 1 2 3 001aaa213 sym011 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT666) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PESD3V3L5UV − plastic surface mounted package; 6 leads SOT666 PESD5V0L5UV − plastic surface mounted package; 6 leads SOT666 2004 Mar 23 2 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Ppp peak pulse power 8/20 µs pulse; notes 1 and 2 − Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 − 2.5 A Tj junction temperature − 150 °C Tamb operation ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C 25 W Notes 1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD maximum ratings SYMBOL PARAMETER CONDITIONS VALUE UNIT IEC 61000-4-2 (contact discharge); notes 1 and 2 20 kV HBM MIL-Std 883 10 kV Per diode ESD electrostatic discharge capability Notes 1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883, class 3 > 4 kV 2004 Mar 23 3 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV 001aaa191 MLE218 120 Ipp handbook, halfpage Ipp (%) 100 % Ipp; 8 µs 100 % 90 % 80 e−t 50 % Ipp; 20 µs 40 10 % 0 0 10 20 30 t (µs) tr = 0.7 to 1 ns 40 30 ns 60 ns Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. 2004 Mar 23 Fig.3 4 Electrostatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. t Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VRWM IRM reverse stand-off voltage PESD3V3L5UV − − 3.3 V PESD5V0L5UV − − 5 V VRWM = 3.3 V − 75 300 nA VRWM = 5 V − 5 25 nA 5.3 5.6 5.9 V 6.4 6.8 7.2 V − 22 28 pF − 16 19 pF Ipp = 1 A − − 10 V Ipp = 2.5 A − − 12 V Ipp = 1 A − − 10 V Ipp = 2.5 A − − 12 V PESD3V3L5UV − − 200 Ω PESD5V0L5UV − − 100 Ω reverse leakage current PESD3V3L5UV PESD5V0L5UV VBR breakdown voltage IR = 1 mA PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV f = 1 MHz; VR = 0 V; see Fig.5 PESD5V0L5UV VCL(R) clamping voltage PESD3V3L5UV PESD5V0L5UV rdiff differential resistance notes 1 and 2 IR = 1 mA Notes 1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. 2004 Mar 23 5 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV GRAPHICAL DATA 001aaa208 102 001aaa209 Ppp(Tj) Ppp(Tj =25°C) 1.0 Ppp (W) 0.8 0.6 10 0.4 0.2 1 1 102 10 103 0 104 0 50 100 t p (µs) Tj (°C) 150 Tamb = 25 °C. Ipp = 8/20 µs exponentially decaying waveform; see Fig.2. Fig.5 Fig.4 Relative variation of peak pulse power as a function of junction temperature; typical values. Peak pulse power dissipation as a function of pulse time; typical values. 001aaa210 25 001aaa211 10 Cd (pF) IR(Tj) IR(Tj =25°C) 20 15 (1) 1 (2) 10 5 10−1 −75 0 0 1 2 3 4 5 VR (V) −25 25 75 125 175 Tj (°C) (1) PESD3V3L5UV. (2) PESD5V0L5UV. f = 1 MHz; Tamb = 25 °C. Fig.7 Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Mar 23 6 Relative variation of reverse leakage current as a function of junction temperature; typical values. Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax CZ 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω note 1 D.U.T.: PESDxL5UV IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω Note 1: Attenuator is only used for open socket high voltage measurements vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div GND1 GND GND2 unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) PESD5V0L5UV PESD3V3L5UV clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) Fig.8 ESD clamping test setup and waveforms. 2004 Mar 23 7 001aaa219 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV APPLICATION INFORMATION The PESDxL5UV is designed for the uni-directional protection of up to five lines or bi-directional protection of four lines from the damage caused by Electrostatic Discharge (ESD) and surge pulses. The PESDxL5UV may be used on lines where the signal polarities are above or below ground. PESDxL5UV can withstand and provides protection from a surge of 25 watts peak pulse power per line for a 8/20 µs waveform. Typical application high speed data lines high speed data lines PESDxL5UV PESDxL5UV GND GND 001aaa217 001aaa215 Fig.9 Typical application for uni-directional protection of five lines. Fig.10 Typical application for bi-directional protection of four lines. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. The protection device should be placed as closely as possible to the input terminal or connector. 2. The path length between the protection device and the protected line should be as short as possible. 3. Parallel signal paths should be kept to a minimum. 4. Running protection conductors in parallel with unprotected conductor should be avoided. 5. All printed-circuit board conductive loops (including power and group loops) should be kept to a minimum. 6. The length of the transient return path to ground should be kept to a minimum. 7. The use of shared transient return paths to a common ground point should be avoided. 8. Ground planes should be used whenever possible. 9. For multilayer printed-circuit boards, ground vias should be used. 2004 Mar 23 8 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2004 Mar 23 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Mar 23 10 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp11 Date of release: 2004 Mar 23 Document order number: 9397 750 12254