BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 02 — 16 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 40 V - - 75 A VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 203 W ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 494 mJ VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14 - 16 - nC VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 4.4 5.2 mΩ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge Static characteristics RDSon [1] drain-source on-state resistance Continuous current is limited by package. BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb [1] G mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK765R2-40B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) BUK765R2-40B_2 Product data sheet Version SOT404 © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 2 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage ID drain current - 40 V -20 20 V Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; [1] - 143 A Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; [2] - 75 A Tmb = 100 °C; VGS = 10 V; see Figure 1; [2] - 75 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 573 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 203 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS ISM source current peak source current Tmb = 25 °C; [1] - 143 A Tmb = 25 °C; [2] - 75 A - 573 A - 494 mJ tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 3 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03na19 120 03nj26 150 Pder (%) ID (A) 80 100 Capped at 75 A due to package 40 50 0 0 0 Fig 1. 50 100 150 0 200 Tmb (°C) Continuous drain current as a function of mounting base temperature 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature 03nj24 103 tp = 10 µs ID (A) Limit RDSon = VDS/ID 102 100 µs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 10-1 Fig 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 4 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 4 junction to mounting base - - 0.74 K/W thermal resistance from minimum footprint; mounted on a junction to ambient printed-circuit board - 50 - K/W 03nj25 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 δ= P tp T single shot t tp 10-3 10-6 Fig 4. T 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 5 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 40 ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 36 gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 2 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 Typ Max Unit - - V - - V 3 4 V 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.4 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 4.4 5.2 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 - - 9.9 mΩ ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 52 - nC - 12 - nC - 16 - nC Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 2842 3789 pF - 711 853 pF - 296 406 pF - 15 - ns - 51 - ns td(on) turn-on delay time tr rise time td(off) turn-off delay time - 81 - ns tf fall time - 56 - ns LD internal drain inductance from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH from source lead to source bond pad; Tj = 25 °C - 7.5 - nH LS internal source inductance Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 - 0.85 1.2 V trr reverse recovery time - 54 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 20 V; Tj = 25 °C - 38 - nC BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 6 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03nk19 400 20 ID (A) 10 9.5 14 label is VGS (V) RDSon (mΩ) 9 8.5 12 300 03nk18 18 13 8 7.5 200 7 6.5 100 8 6 5.5 5 4.5 0 0 Fig 5. 2 4 3 6 8 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values 5 Fig 6. 10 15 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 03aa35 10−1 03nk16 80 ID (A) min 10−2 typ gfs (S) max 60 10−3 40 10−4 20 10−5 10−6 0 2 4 0 6 0 VGS (V) Fig 7. 40 60 80 ID (A) Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values BUK765R2-40B_2 Product data sheet 20 © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 7 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03nk17 100 VGS(th) (V) ID (A) 4 max 75 3 typ 50 2 25 min 1 Tj = 175 °C Tj = 25 °C 0 −60 0 0 Fig 9. 2 4 6 VGS (V) Transfer characteristics: drain current as a function of gate-source voltage; typical values 7 6 8 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa27 2 03nk20 10 0 a RDSon (mΩ) 1.5 8 10 1 6 20 0.5 4 label is VGS (V) 2 0 100 200 300 ID (A) 400 Fig 11. Drain-source on-state resistance as a function of drain current; typical values 0 -60 60 120 Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK765R2-40B_2 Product data sheet 0 © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 8 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 03nk14 100 03nk15 10 VGS (V) IS (A) 8 VDD = 14 V 75 VDD = 32 V 6 50 4 Tj = 175 °C 25 Tj = 25 °C 2 0 0 0.0 0.3 0.6 0.9 VSD (V) 1.2 0 Fig 13. Source current as a function of source-drain voltage; typical values 20 40 QG (nC) 60 Fig 14. Gate-source voltage as a function of gate charge; typical values 03nk21 4000 C (pF) Ciss 3000 Coss 2000 1000 Crss 0 10-1 1 10 VDS (V) 102 Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 9 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 16. Package outline SOT404 (D2PAK) BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 10 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK765R2-40B_2 20090116 Product data sheet - BUK75_765R2_40B-01 Modifications: BUK75_765R2_40B-01 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. Type number BUK765R2-40B separated from data sheet BUK75_765R2_40B-01. Package outline updated. 20030514 Product data sheet - BUK765R2-40B_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 11 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK765R2-40B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 16 January 2009 12 of 13 BUK765R2-40B NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 January 2009 Document identifier: BUK765R2-40B_2