PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 27 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Fast switching Low recovered charge Low on-state resistance 1.3 Applications AC-to-DC converters secondary side DC-to-DC converters Class D amplifiers Motion control 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 75 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 - - 75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 250 W VGS = 0 V; IS = 5 A; dIS/dt = 150 A/µs; VDS = 12 V - 56 - nC VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 10 - 4.1 5 mΩ Source-drain diode Qr recovered charge Static characteristics RDSon drain-source on-state resistance PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D drain Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP165NQ08T TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 2 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 75 V VDGR drain-gate voltage Tj ≤ 150 °C; Tj ≥ 25 °C; RGS = 20 kΩ VGS gate-source voltage ID drain current - 75 V -20 20 V VGS = 10 V; Tmb = 100 °C; see Figure 1 - 75 A VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 - 75 A IDM peak drain current tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 - 400 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 250 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C VGSM peak gate-source voltage pulsed; tp ≤ 50 µs; δ = 25 %; Tj ≤ 150 °C -30 30 V Source-drain diode IS source current Tmb = 25 °C - 75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 400 A Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup = 15 V; drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 Ω energy - 500 mJ IDS(AL)S non-repetitive VGS = 10 V; Vsup = 15 V; RGS = 50 Ω; drain-source avalanche Tj(init) = 25 °C; unclamped current - 75 A PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 3 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 003aac592 125 Ider (%) 003aac591 120 Pder (%) 100 80 75 50 40 25 0 0 0 Fig 1. 50 100 150 Tj (°C) 200 Normalized continuous drain current as a function of mounting base temperature 0 Fig 2. 50 100 150 Tj (°C) 200 Normalized total power dissipation as a function of mounting base temperature 003aac600 103 Limit RDSon = VDS / ID ID (A) tp = 10 μs 102 100 μs 1 ms DC 10 10 ms 100 ms 1 10-1 10-1 Fig 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 4 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 4 junction to mounting base - - 0.5 K/W thermal resistance from vertical in still air junction to ambient - 60 - K/W 003aac601 1 Zth(j-mb) (K/W) 0.5 10-1 0.2 0.1 δ= P tp T 0.05 0.02 10-2 10-5 Fig 4. t tp single pulse T 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse duration PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 5 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 67 - - V ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 75 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 8 1.1 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 8; see Figure 9 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 8 - - 4.4 V VDS = 75 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 75 V; VGS = 0 V; Tj = 150 °C - - 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 10 V; ID = 25 A; Tj = 150 °C; see Figure 10; see Figure 11 - 8.9 11 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 10 - 4.1 5 mΩ ID = 75 A; VDS = 60 V; VGS = 10 V; Tj = 25 °C; see Figure 12; see Figure 13 - 165 - nC - 32 - nC - 50 - nC Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 14 - 8250 - pF - 920 - pF - 570 - pF - 48 - ns - 67 - ns turn-off delay time - 144 - ns fall time - 74 - ns VDS = 15 V; RL = 1.25 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 15 - 0.8 1.2 V trr reverse recovery time - 49 - ns Qr recovered charge IS = 5 A; dIS/dt = 150 A/µs; VGS = 0 V; VDS = 12 V - 56 - nC PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 6 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 003aac603 300 ID (A) 7.5 V 8V 240 7V 6.5 V 003aac593 100 ID (A) 8.5 V 75 10 V 180 6V 20 V 50 Tj = 150 °C 120 25 °C 5.5 V 25 60 VGS = 5 V 0 0 0 Fig 5. 0.5 1 1.5 0 2 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. 003aac597 105 2 4 003aac594 5 Ciss 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values VGS(th) (V) 4 C (pF) VGS (V) max 3 typ 2 min 104 Crss 1 103 10-1 Fig 7. 1 VGS (V) 0 -60 10 Input and reverse transfer capacitances as a function of gate-source voltage; typical values Fig 8. 60 120 Tj (°C) 180 Gate-source threshold voltage as a function of junction temperature PHP165NQ08T_2 Product data sheet 0 © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 7 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 003aac595 10-1 003aac602 16 ID (A) RDSon (m Ω) 10-2 12 VGS = 5 V 5.5 V 6 V min -3 10 typ max 8 6.5 V 10-4 4 10 V 10-5 8V 7.5 V 7 V 0 0 Fig 9. 8.5 V 2 4 VGS (V) 6 Sub-threshold drain current as a function of gate-source voltage 0 60 120 180 240 ID (A) 300 Fig 10. Drain-source on-state resistance as a function of drain current; typical values 03aj03 2.5 VDS a ID 2 VGS(pl) 1.5 VGS(th) VGS 1 QGS1 QGS2 QGS 0.5 QGD QG(tot) 003aaa508 0 −60 0 60 120 180 Fig 12. Gate charge waveform definitions Tj (°C) Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 8 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 003aac599 10 ID = 75A Tj = 25 °C VGS (V) 003aac596 105 C (pF) 14 V 7.5 104 Ciss VDS = 60 V 5 103 Coss 2.5 Crss 102 10-1 0 0 50 100 150 QG (nC) 200 Fig 13. Gate-source voltage as a function of gate charge; typical values 1 10 VDS (V) 102 Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aac598 100 IS (A) 75 50 Tj = 150 °C 25 25 °C 0 0 0.25 0.5 0.75 VSD (V) 1 Fig 15. Source current as a function of source-drain voltage; typical values PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 9 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 16. Package outline SOT78 (TO-220AB) PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 10 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PHP165NQ08T_2 20090327 Product data sheet - PHP165NQ08T_1 Modifications: PHP165NQ08T_1 • Maximum value of thermal resistance from junction to mounting base updated. 20090310 Product data sheet - PHP165NQ08T_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 11 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PHP165NQ08T_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 March 2009 12 of 13 PHP165NQ08T NXP Semiconductors N-channel TrenchMOS SiliconMAX standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 March 2009 Document identifier: PHP165NQ08T_2