PMF370XN N-channel TrenchMOS extremely low level FET Rev. 03 — 20 June 2008 Product data sheet 1. Product profile 1.1 General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Low threshold voltage on-state resistance Saves PCB space due to small footprint Suitable for low gate drive sources (40 % smaller than SOT23) Surface-mounted package 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 30 V ID drain current Tsp = 25 °C; VGS = 4.5 V; see Figure 1 and 3 - - 0.87 A Ptot total power dissipation Tsp = 25 °C; see Figure 2 - - 0.56 W VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 9 and 10 - 370 440 mΩ Static characteristics RDSon drain-source on-state resistance PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 mbb076 SOT323 (SC-70) S 3. Ordering information Table 3. Ordering information Type number PMF370XN Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 30 V VDGR drain-gate voltage Tj ≤ 150 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -12 12 V ID drain current Tsp = 25 °C; VGS = 4.5 V; see Figure 1 and 3 - 0.87 A Tsp = 100 °C; VGS = 4.5 V; see Figure 1 - 0.55 A IDM peak drain current Tsp = 25 °C; tp ≤ 10 μs; pulsed; see Figure 3 - 1.74 A Ptot total power dissipation Tsp = 25 °C; see Figure 2 - 0.56 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C Source-drain diode IS source current Tsp = 25 °C - 0.47 A ISM peak source current Tsp = 25 °C; tp ≤ 10 μs; pulsed - 0.94 A PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 2 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03aa25 120 03aa17 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tsp (°C) Ider = ID ID(25°C ) × 100 % P der = Fig 1. Normalized continuous drain current as a function of solder point temperature P tot P tot (25°C ) × 100 % Fig 2. Normalized total power dissipation as a function of solder point temperature 03an15 10 ID (A) 200 Tsp (°C) Limit RDSon = VDS / ID tp = 10 μ s 1 100 μ s 1 ms 10-1 DC 10 ms 100 ms 10-2 10-1 1 10 102 VDS (V) Ts p = 25°C; IDM is single pulse;VGS = 4.5V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 3 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance see Figure 4 from junction to solder point Min Typ Max Unit - - 220 K/W 03an27 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 0.05 0.02 10 δ= P single pulse tp T t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 1 μA; VGS = 0 V; Tj = -55 °C 27 - - V ID = 1 μA; VGS = 0 V; Tj = 25 °C 30 - - V - - 1.8 V ID = 0.25 mA; VDS = VGS; Tj = 150 °C; see Figure 7 and 8 0.35 - - V ID = 0.25 mA; VDS = VGS; Tj = 25 °C; see Figure 7 and 8 0.5 1 1.5 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 μA VDS = 30 V; VGS = 0 V; Tj = 70 °C - - 2 μA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 μA VGS = 12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA Static characteristics V(BR)DSS VGS(th) IDSS IGSS drain-source breakdown voltage gate-source threshold ID = 0.25 mA; VDS = VGS; voltage Tj = -55 °C; see Figure 7 drain leakage current gate leakage current PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 4 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = 2.5 V; ID = 0.1 A; Tj = 25 °C; see Figure 9 and 10 - 550 650 mΩ VGS = 4.5 V; ID = 0.2 A; Tj = 150 °C; see Figure 10 - 629 748 mΩ VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 9 and 10 - 370 440 mΩ ID = 1 A; VDS = 15 V; VGS = 4.5 V; Tj = 25 °C; see Figure 11 and 12 - 0.65 - nC - 0.14 - nC - 0.18 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 13 RG(ext) = 6 Ω; RL = 15 Ω; VDS = 15 V; VGS = 4.5 V; Tj = 25 °C - 37 - pF - 8.5 - pF - 5.5 - pF - 6.5 - ns - 9.5 - ns - 14 - ns - 5.5 - ns - 0.81 1.2 V Source-drain diode source-drain voltage VSD IS = 0.3 A; VGS = 0 V; Tj = 25 °C; see Figure 14 03ao00 2.5 VGS (V) = 4.5 ID (A) 3.5 03ao02 2.5 ID (X) 2 25 °C Tj = 150 °C 2 3 1.5 1.5 1 2.5 0.5 2 1 0.5 1.8 0 0 0 0.5 1 1.5 2 0 VDS (V) 2 3 4 5 VGS (V) T j = 25°C T j = 25°C and 150°C;VDS > ID × R DSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMF370XN_3 Product data sheet 1 © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 5 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03al82 2 VGS (th) (V) 03an65 10−3 ID (A) 1.5 max 1 10−4 typ min 10−5 typ max min 0.5 10−6 0 −60 0 60 120 180 0 0.8 1.2 1.6 VGS (V) ID = 0.25 A;VDS = VGS T j = 25°C;VDS = 5V Fig 7. Gate-source threshold voltage as a function of junction temperature Fig 8. Subthreshold drain current as a function of gate-source voltage 03ao01 1 VGS (V) = 2.5 RDSon (Ω) 0.4 Tj (°C) 03al00 1.8 3 a 0.8 3.5 1.2 0.6 4.5 0.4 0.6 0.2 0 0 0.5 1 1.5 2 2.5 ID (A) T j = 25°C 0 −60 a= Fig 9. Drain-source on-state resistance as a function of drain current; typical values 60 120 180 Tj (°C) R DSon R DSon (25°C ) Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature PMF370XN_3 Product data sheet 0 © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 6 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03ao05 5 VGS (V) ID = 1 A Tj = 25 °C 4 VDS ID VDS = 15 V 3 VGS(pl) 2 VGS(th) VGS 1 QGS1 QGS2 QGS QGD QG(tot) 0 0 0.2 0.4 0.6 0.8 QG (nC) 003aaa508 ID = 1 A;VDS = 15V Fig 11. Gate charge waveform definitions Fig 12. Gate-source voltage as a function of gate charge; typical values 03ao04 102 03ao03 1 VGS = 0 V IS (A) 0.8 Ciss C (pF) 0.6 10 Coss 0.4 Crss 0.2 Tj = 25 °C 150 °C 1 10−1 1 102 10 0 0 0.2 0.4 0.6 VDS (V) VGS = 0V; f = 1M H z T j = 25°C and 150°C;VGS = 0V Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 14. Source current as a function of source-drain voltage; typical values PMF370XN_3 Product data sheet 0.8 1 VSD (V) © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 7 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 7. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC SOT323 JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 15. Package outline SOT323 (SC-70) PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 8 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 8. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig 16. SOT323 (SC-70) PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 9 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PMF370XN_3 20080620 Product data sheet - PMF370XN_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate PMF370XN_2 20051206 Product data sheet - PMF370XN-01 PMF370XN-01 20040211 Product data sheet - - PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 10 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 20 June 2008 11 of 12 PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 June 2008 Document identifier: PMF370XN_3