PESDxS5UD series Fivefold ESD protection diode arrays Rev. 02 — 7 December 2006 Product data sheet 1. Product profile 1.1 General description Fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to five signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of up to five lines Max. peak pulse power: PPP = 200 W Ultra low leakage current: IRM = 50 pA Low clamping voltage: VCL = 12 V at IPP = 20 A n ESD protection up to 30 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5 (surge); IPP up to 20 A 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit PESD3V3S5UD - - 3.3 V PESD5V0S5UD - - 5 V PESD12VS5UD - - 12 V PESD15VS5UD - - 15 V PESD24VS5UD - - 24 V Per diode VRWM reverse standoff voltage PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays Table 1. Quick reference data …continued Symbol Parameter Conditions Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit PESD3V3S5UD - 215 300 pF PESD5V0S5UD - 165 220 pF PESD12VS5UD - 73 100 pF PESD15VS5UD - 60 90 pF PESD24VS5UD - 45 70 pF 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4 6 cathode 5 Simplified outline 6 1 5 2 Symbol 4 3 1 6 2 5 3 4 006aaa159 3. Ordering information Table 3. Ordering information Type number PESD3V3S5UD Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 PESD5V0S5UD PESD12VS5UD PESD15VS5UD PESD24VS5UD 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S5UD E1 PESD5V0S5UD E2 PESD12VS5UD E3 PESD15VS5UD E4 PESD24VS5UD E5 PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 2 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 µs [1][2] IPP peak pulse current tp = 8/20 µs [1][2] - 200 W PESD3V3S5UD - 20 A PESD5V0S5UD - 20 A PESD12VS5UD - 10 A PESD15VS5UD - 6 A PESD24VS5UD - 4 A Per diode Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4, 5 or 6 to 2. Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit PESD3V3S5UD - 30 kV PESD5V0S5UD - 30 kV PESD12VS5UD - 30 kV PESD15VS5UD - 30 kV PESD24VS5UD - 23 kV - 10 kV Per diode VESD PESDxS5UD series MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4, 5 or 6 to 2. Table 7. [1][2] ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 10 kV PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 3 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % t tr = 0.7 ns to 1 ns 0 0 10 20 30 30 ns 40 t (µs) 60 ns Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3S5UD - - 3.3 V PESD5V0S5UD - - 5 V PESD12VS5UD - - 12 V PESD15VS5UD - - 15 V PESD24VS5UD - - 24 V Per diode VRWM IRM reverse standoff voltage reverse leakage current PESD3V3S5UD VRWM = 3.3 V - 300 800 nA PESD5V0S5UD VRWM = 5 V - 80 200 nA PESD12VS5UD VRWM = 12 V - 0.05 15 nA PESD15VS5UD VRWM = 15 V - 0.05 15 nA VRWM = 24 V - 0.05 15 nA PESD3V3S5UD 5.3 5.6 5.9 V PESD5V0S5UD 6.4 6.8 7.2 V PESD12VS5UD 12.5 14.5 16 V PESD15VS5UD 17 18 19 V PESD24VS5UD 25.5 27 29 V PESD24VS5UD VBR breakdown voltage IR = 1 mA PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 4 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Cd f = 1 MHz; VR = 0 V diode capacitance PESD3V3S5UD Max Unit - 215 300 pF - 165 220 pF PESD12VS5UD - 73 100 pF PESD15VS5UD - 60 90 pF - 45 70 pF IPP = 1 A - - 8 V IPP = 20 A - - 12 V IPP = 1 A - - 8 V IPP = 20 A - - 13 V IPP = 1 A - - 17 V IPP = 10 A - - 24 V IPP = 1 A - - 22 V IPP = 6 A - - 33 V IPP = 1 A - - 33 V IPP = 4 A - - 52 V IR = 5 mA - - 25 Ω [1][2] clamping voltage PESD3V3S5UD PESD5V0S5UD PESD12VS5UD PESD15VS5UD PESD24VS5UD differential resistance rdif Typ PESD5V0S5UD PESD24VS5UD VCL Min [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4, 5 or 6 to 2. 006aaa698 104 PPP (W) 001aaa633 1.2 PPP PPP(25°C) 103 0.8 102 0.4 10 1 1 10 102 103 104 0 0 tp (µs) 50 100 150 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 5 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 006aaa700 220 Cd (pF) 006aaa701 80 Cd (pF) 180 60 140 40 (1) (1) (2) (2) 100 20 60 (3) 0 0 1 2 3 4 5 0 5 10 15 20 VR (V) 25 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) PESD3V3S5UD (1) PESD12VS5UD (2) PESD5V0S5UD (2) PESD15VS5UD (3) PESD24VS5UD Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values I 006aaa699 10 IRM IRM(25°C) −VCL −VBR −VRWM V −IRM −IR 1 − + P-N 10−1 −100 −50 0 50 100 −IPP 150 Tj (°C) 006aaa407 PESD3V3S5UD; PESD5V0S5UD IR is less than 5 nA at 150 °C for: PESD12VS5UD; PESD15VS5UD; PESD24VS5UD Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8. V-I characteristics for a unidirectional ESD protection diode PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 6 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays ESD TESTER 450 Ω Rd RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω Cs IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω DUT (DEVICE UNDER TEST) vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS5UD GND PESD15VS5UD GND PESD12VS5UD GND PESD5V0S5UD GND GND PESD3V3S5UD GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa702 Fig 9. ESD clamping test setup and waveforms PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 7 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 7. Application information The PESDxS5UD series is designed for the protection of up to five unidirectional data lines from the damage caused by ESD and surge pulses. The PESDxS5UD series may be used on lines where the signal polarities are both, positive and negative with respect to ground. The PESDxS5UD series provides a surge capability of 200 W per line for an 8/20 µs waveform. high-speed data lines PESDxS5UD PESDxS5UD 1 6 1 6 2 5 2 5 3 4 3 4 unidirectional protection of 5 lines bidirectional protection of 4 lines 006aaa019 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS5UD as close to the input terminal or connector as possible. 2. The path length between the PESDxS5UD and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 8 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 8. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 11. Package outline SOT457 (SC-74) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3S5UD PESD5V0S5UD PESD12VS5UD PESD15VS5UD PESD24VS5UD Package Description SOT457 SOT457 SOT457 SOT457 SOT457 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 13. [2] T1: normal taping [3] T2: reverse taping PESDXS5UD_SER_2 Product data sheet Packing quantity © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 9 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 10. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 12. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 13. Wave soldering footprint SOT457 (SC-74) PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 10 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS5UD_SER_2 20061207 Product data sheet - PESDXS5UD_SER_1 Modifications: PESDXS5UD_SER_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Table 2 “Pinning”: symbol drawing amended Table 5 “Limiting values”: amended Table 6 “ESD maximum ratings”: amended Table 7 “ESD standards compliance”: amended Table 8 “Characteristics”: VBR minimum and maximum values for PESD15VS5UD adapted Figure 7: figure notes adapted Section 10 “Soldering”: added 20060404 Product data sheet PESDXS5UD_SER_2 Product data sheet - - © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 11 of 13 PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PESDXS5UD_SER_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 7 December 2006 12 of 13 NXP Semiconductors PESDxS5UD series Fivefold ESD protection diode arrays 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 December 2006 Document identifier: PESDXS5UD_SER_2