PMEM1505NG NPN transistor/Schottky rectifier module Rev. 02 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package. PNP complement: PMEM1505PG 1.2 Features n n n n n n 300 mW total power dissipation Current capability up to 0.5 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor u Low collector-emitter saturation voltage. n Diode u Ultra high-speed switching u Very low forward voltage u Guard ring protected 1.3 Applications n DC-to-DC converters n General purpose load drivers n MOSFET drivers n Inductive load drivers n Reverse polarity protection circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 15 V - - 0.5 A NPN transistor VCEO IC collector-emitter voltage collector current (DC) open base continuous [1] Schottky barrier rectifier VR continuous reverse voltage - - 20 V IF continuous forward current - - 0.5 A [1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 2. Pinning information Table 2. Discrete pinning Pin Description 1 anode 5 cathode 4 collector 2 base 3 emitter Simplified outline 5 1 Symbol 3 4 2 2 1 3 4 5 sym023 3. Ordering information Table 3. Ordering information Type number PMEM1505NG Package Name Description Version - plastic surface mounted package; 5 leads SOT353 4. Marking Table 4. Marking Type number Marking code[1] PMEM1505NG L7* [1] * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit NPN transistor VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector IC collector current (DC) - 6 V continuous [1] - 0.5 A continuous [2] - 0.6 A continuous; Ts ≤ 55 °C [3] - 1 A ICM peak collector current - 1 A IBM peak base current - 100 mA PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 2 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions Min Max Unit Tamb ≤ 25 °C [1] total power dissipation - 200 mW Tamb ≤ 25 °C [2] - 250 mW Ts ≤ 55 °C [3] - 800 mW - 150 °C - 20 V junction temperature Tj Schottky barrier rectifier VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current t = 8.3 ms; square wave Ptot total power dissipation Tamb ≤ 25 °C - 0.5 A - 5 A [1] - 100 mW Tamb ≤ 25 °C [2] - 200 mW Ts ≤ 55 °C [3] - 800 mW [2] - 125 °C junction temperature Tj Combined device Ptot total power dissipation Tstg storage temperature Tamb operating ambient temperature Tamb ≤ 25 °C [2] [2] - 300 mW −65 +150 °C −65 +125 °C [1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. [2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode. [3] Solder point of collector or cathode tab. 6. Thermal characteristics Table 6. Symbol Thermal characteristics[1] Parameter Conditions Typ Unit Single device Rth(j-s) thermal resistance from junction to solder point in free air [2] 120 K/W Rth(j-a) thermal resistance from junction to ambient in free air [3] 395 K/W [4] 495 K/W [5] 410 K/W Combined device Rth(j-a) thermal resistance from junction to ambient [1] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Solder point of collector or cathode tab. [3] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode. [4] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. [5] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. PMEM1505NG_2 Product data sheet in free air © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 3 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off current VCB = 15 V; IE = 0 A - - 100 nA VCB = 15 V; IE = 0 A; Tj = 150 °C - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA 200 - - VCE = 2 V; IC = 100 mA 150 - - VCE = 2 V; IC = 500 mA 90 - - NPN transistor ICBO VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 25 mV IC = 200 mA; IB = 10 mA - - 150 mV IC = 500 mA; IB = 50 mA - - 250 mV - 300 < 500 mΩ RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA [1] VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] - - 1.1 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA [1] - - 0.9 V fT transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz 250 420 - MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz - 4.4 6 pF Schottky barrier rectifier continuous forward voltage VF reverse current IR diode capacitance Cd [1] see Figure 1 IF = 10 mA [1] - 240 270 mV IF = 100 mA [1] - 300 350 mV IF = 500 mA [1] - 400 460 mV IF = 1000 mA [1] - 480 550 mV VR = 5 V [1] - 5 10 µA VR = 8 V [1] - 7 20 µA VR = 15 V [1] - 10 50 µA - 19 25 pF see Figure 2 VR = 5 V; f = 1 MHz; see Figure 3 Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 4 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 001aaa479 103 001aaa480 105 IR (µA) IF (mA) 104 (1) (2) (1) (3) 102 103 (2) 102 10 (3) 10 1 1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 VF (V) Schottky barrier rectifier Schottky barrier rectifier (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C Fig 1. 25 VR (V) Forward current as a function of forward voltage; typical values 001aaa481 80 Cd (pF) Fig 2. Reverse current as a function of reverse voltage; typical values 001aaa482 600 (1) hFE 60 400 (2) 40 200 (3) 20 0 10−1 0 0 5 10 15 20 1 10 VR (V) 102 103 IC (mA) Schottky barrier rectifier; f = 1 MHz; Tamb = 25 °C NPN transistor; VCE = 2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Diode capacitance as a function of reverse voltage; typical values Fig 4. DC current gain as a function of collector current; typical values PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 5 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 001aaa483 1.1 001aaa484 103 VBE (V) VCEsat (mV) 0.9 (1) 102 (1) (2) 0.7 0.5 (2) (3) 10 (3) 0.3 0.1 10−1 1 10 102 1 10−1 103 1 10 IC (mA) 103 IC (mA) NPN transistor; VCE = 2 V NPN transistor; IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = −55 °C Fig 5. 102 Base-emitter voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa485 102 RCEsat (Ω) 10 (2) (1) 1 (3) 10−1 10−1 1 10 102 103 IC (mA) NPN transistor; IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Equivalent on-resistance as a function of collector current; typical values PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 6 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 8. Application information VCC VIN VOUT CONTROLLER IN Rload mle231 Fig 8. DC-to-DC converter mdb577 Fig 9. Inductive load driver (relays, motors and buzzers) with free-wheeling diode PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 7 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 9. Package outline Plastic surface-mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.3 0.2 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 REFERENCES IEC JEDEC JEITA SC-88A EUROPEAN PROJECTION ISSUE DATE 04-11-16 06-03-16 Fig 10. Package outline PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 8 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEM1505NG_2 20090831 Product data - PMEM1505NG_1 Modifications: PMEM1505NG_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • Table 2 “Discrete pinning”: amended Figure 10 “Package outline”:updated 20040525 Product data PMEM1505NG_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 9 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMEM1505NG_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 10 of 11 PMEM1505NG NXP Semiconductors NPN transistor/Schottky rectifier module 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 31 August 2009 Document identifier: PMEM1505NG_2