DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PMEM4020PD PNP transistor/Schottky-diode module Product data sheet 2003 Nov 24 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module FEATURES PMEM4020PD PINNING • 600 mW total power dissipation PIN DESCRIPTION • High current capability 1 emitter • Reduces required PCB area 2 not connected • Reduced pick and place costs 3 cathode • Small plastic SMD package. 4 anode 5 base 6 collector Transistor • Low collector-emitter saturation voltage. Diode • Ultra high-speed switching handbook, halfpage 6 5 4 • Very low forward voltage 4 • Guard ring protected. 3 6 5 1 APPLICATIONS 1 • DC-to-DC converters 2 3 MGU868 • Inductive load drivers • General purpose load drivers Marking code: B7. • Reverse polarity protection circuits. Fig.1 Simplified outline (SOT457) and symbol. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020ND. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PD 2003 Nov 24 − DESCRIPTION plastic surface mounted package; 6 leads 2 VERSION SOT457 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) note 1 − −0.75 A note 2 − −1 A note 3 − −1.3 A Ts ≤ 55 °C; note 4 − −2 A ICM peak collector current − −3 A IBM peak base current − −1 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 295 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; note 3 − 500 mW Ts ≤ 55 °C; note 4 − 1 000 mW − 150 °C − 20 V Tj junction temperature Schottky barrier diode VR continuous reverse voltage IF continuous forward current − 1 A IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method − 5 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 295 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; note 3 − 500 mW Ts ≤ 55 °C; note 4 − 1 000 mW note 2 − 150 °C Tamb = 25 °C; note 2 − 600 mW −65 +150 °C −65 +150 °C Tj junction temperature Combined device Ptot total power dissipation Tstg storage temperature Tamb operating ambient temperature note 2 Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab. 2003 Nov 24 3 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Single device Rth(j-s) thermal resistance from junction to solder point in free air; notes 1 and 2 95 K/W Rth(j-a) thermal resistance from junction to ambient in free air; notes 1 and 3 250 K/W in free air; notes 1 and 4 315 K/W in free air; notes 1 and 5 425 K/W in free air; notes 1 and 3 208 K/W Combined device Rth(j-a) thermal resistance from junction to ambient Notes 1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. 2. Solder point of collector or cathode tab. 3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and cathode both 1 cm2. 5. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457. 2003 Nov 24 4 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PNP transistor − − −100 nA VCB = −40 V; IE = 0; Tamb = 150 °C − − −50 µA VCE = −30 V; IB = 0 − − −100 nA emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA current gain (DC) VCE = −5 V; IC = −1 mA 300 − − VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − VCE = −5 V; IC = −2 A; note 1 50 − − − − −120 mV IC = −500 mA; IB = −50 mA − − −145 mV IC = −1 A; IB = −100 mA − − −260 mV IC = −2 A; IB = −200 mA − − −530 mV ICBO collector-base cut-off current ICEO collector-emitter cut-off current IEBO hFE VCEsat VCB = −40 V; IE = 0 collector-emitter saturation voltage IC = −100 mA; IB = −1 mA VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − 180 280 mΩ VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − − MHz IF = 10 mA − 240 270 mV IF = 100 mA − 300 350 mV IF = 1 000 mA − 480 550 mV VR = 5 V − 5 10 µA VR = 8 V − 7 20 µA VR = 15 V − 10 50 µA − 19 25 pF Schottky barrier diode VF IR Cd continuous forward voltage reverse current diode capacitance see Fig.2; note 1 see Fig.3; note 1 VR = 5 V; f = 1 MHz; see Fig.4 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Nov 24 5 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD GRAPHICAL DATA MLE230 103 handbook, halfpage MHC312 105 handbook, halfpage IR (µA) IF (mA) (1) 104 102 (2) 103 (1) (2) 102 (3) 10 (3) 10 1 0 100 200 300 1 400 500 VF (mV) 0 5 15 20 25 VR (V) Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC313 80 10 Reverse current as a function of reverse voltage; typical values. MHC088 1200 handbook, halfpage handbook, halfpage hFE Cd (pF) 1000 (1) 60 800 40 600 (2) 400 (3) 20 200 0 −10−1 0 0 5 10 15 VR (V) 20 −1 −10 −102 −103 −104 IC (mA) PNP transistor; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. Schottky barrier diode; f = 1 MHz; Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Nov 24 Fig.5 6 DC current gain as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module MHC089 −10 PMEM4020PD MHC090 −103 handbook, halfpage handbook, halfpage VCEsat (mV) VBE (V) −102 −1 (1) (1) (2) −10 (2) (3) (3) −10−1 −10−1 −1 −10 −102 −1 −1 −103 −104 IC (mA) −102 −10 PNP transistor; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. PNP transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Base-emitter voltage as a function of collector current; typical values. MHC091 102 handbook, halfpage RCEsat (Ω) 300 fT (MHz) 250 10 200 −103 IC (mA) −104 Collector-emitter saturation voltage as a function of collector current; typical values. MHC092 handbook, halfpage 150 1 100 (1) 50 (2) (3) 10−1 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 −200 −400 PNP transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. PNP transistor; VCE = −10 V. Fig.8 Fig.9 Equivalent on-resistance as a function of collector current; typical values. 2003 Nov 24 7 −600 −800 −1000 IC (mA) Transition frequency as a function of collector current. NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD APPLICATION INFORMATION handbook, halfpage handbook, halfpage Vin VCC Vout IN CONTROLLER MGU866 MGU867 Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode. Fig.10 DC-to-DC converter. 2003 Nov 24 8 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Nov 24 REFERENCES IEC JEDEC EIAJ SC-74 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet PNP transistor/Schottky-diode module PMEM4020PD DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 Nov 24 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp11 Date of release: 2003 Nov 24 Document order number: 9397 750 11907