Philips Semiconductors Product specification NPN high voltage Power transistor FEATURES BUX84S SYMBOL • Fast switching • Excellent thermal stability • High thermal cycling performance • Low thermal resistance • Surface mounting package QUICK REFERENCE DATA VCESM = 800 V c VCEO = 400 V b IC = 2 A e VCE(SAT) ≤ 1 V (IC = 1 A) tf = 0.4 µs (typ) GENERAL DESCRIPTION PINNING High voltage, high speed glass passivated NPN power transistor in a plastic package. Applications:Off-line SMPS TV and monitor power supplies Inverters Electronic lighting ballasts PIN SOT428 DESCRIPTION 1 base 2 collector1 3 emitter tab 2 4 collector (tab) 1 3 The BUX84S is supplied in the SOT428 (DPAK) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VCESM VCEO VEBO IC ICM IB IBM -IBM Ptot Tj, Tstg Collector-emitter voltage (peak value) Collector-emitter voltage (DC) Emitter-base voltage Collector current (DC) Collector current (peak value) Base current (DC) Base current (peak value) Reverse base current (peak value during turn-off) Total power dissipation Operating junction and storage temperature CONDITIONS MIN. MAX. UNIT VBE = 0 V - 800 V base open circuit - 400 V collector open circuit - 5 2 3 V A A - 0.75 1 1 A A A - 65 50 150 W ˚C tp = 2 ms Tmb = 25 ˚C 1 It is not possible to make connection to pin:2 of the SOT428 package. February 1999 1 Rev 1.000 Philips Semiconductors Product specification NPN high voltage Power transistor BUX84S THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, FR4 board, minimum footprint TYP. MAX. UNIT - - 2.5 K/W - 50 - K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified For characteristic curves, refer to BUX84 data sheet. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO(sust IC = 100 mA; IB(OFF) = 0 A; L = 25 mH 400 - - V - - 0.8 1 1.1 V V V VCEM = 800 V; VBE = 0 V VCEM = 800 V; VBE = 0 V; Tj = 125˚C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA VCE = 5 V; IC = 100 mA 15 20 50 200 1.5 1 100 µA mA mA IEBO hFE Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter cut-off current Emitter-base cut-off current DC current gain fT Transition frequency VCE = 10 V; IC = 200 mA; f = 1 MHz - 20 - MHz ton Turn-on time - 0.2 0.5 µs tf Fall time IC(on) = 1 A; IB(on) = 200 mA; IB(off) = -400 mA; VCC = 250 V Tj = 25˚C Tj = 95˚C ts Storage time - 0.4 2 1.4 3.5 µs µs µs VCE(SAT) VBE(SAT) ICES February 1999 IC = 0.3 A; IB = 30 mA IC = 1 A; IB = 0.2 A IC = 1 A; IB = 0.2 A 2 Rev 1.000 Philips Semiconductors Product specification NPN high voltage Power transistor BUX84S MECHANICAL DATA Plastic surface mounted package (Philips version of D-PAK); 2 leads SOT428 seating plane y A E A2 A A1 b2 D1 E1 D HE L2 L1 L 1 2 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) A2 b b1 max. b2 c 0.65 0.45 0.89 0.71 0.89 0.71 1.1 0.9 5.36 5.26 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 2.285 4.57 HE max. L 10.4 9.6 2.95 2.55 L1 min. L2 w y max. 0.5 0.7 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT428 EUROPEAN PROJECTION ISSUE DATE 97-06-11 Fig.1. SOT428 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". February 1999 3 Rev 1.000 Philips Semiconductors Product specification NPN high voltage Power transistor BUX84S MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.2. SOT428 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 4 Rev 1.000