DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor BD132 FEATURES PINNING • High current (max. 3 A) PIN • Low voltage (max. 45 V). DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose power applications. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD131. handbook, halfpage 2 3 1 1 Fig.1 2 3 Top view MAM272 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −45 V VCEO collector-emitter voltage open base − −45 V ICM peak collector current − −6 A Ptot total power dissipation Tmb ≤ 60 °C − 15 W hFE DC current gain IC = −0.5 A; VCE = −12 V 40 − fT transition frequency IC = −0.25 A; VCE = −5 V; f = 100 MHz 60 − 1997 Mar 04 2 MHz Philips Semiconductors Product specification PNP power transistor BD132 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −45 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −4 V IC collector current (DC) − −3 A ICM peak collector current − −6 A IBM peak base current − −0.5 A Ptot total power dissipation − 15 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tmb ≤ 60 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-mb thermal resistance from junction to mounting base note 1 Note 1. Refer to TO-126; SOT32 standard mounting conditions. 1997 Mar 04 3 VALUE UNIT 100 K/W 6 K/W Philips Semiconductors Product specification PNP power transistor BD132 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = −40 V MIN. − MAX. UNIT −50 ICBO collector cut-off current IE = 0; VCB = −40 V; Tj = 150 °C − −10 µA IEBO emitter cut-off current IC = 0; VEB = −3 V − −50 nA hFE DC current gain IC = −0.5 A; VCE = −12 V 40 − IC = −2 A; VCE = −1 V; see Fig.2 20 − VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −50 mA − −300 mV IC = −2 A; IB = −200 mA − −700 mV base-emitter saturation voltage VBEsat transition frequency fT nA IC = −0.5 A; IB = −50 mA − −1.2 V IC = −2 A; IB = −200 mA − −1.5 V IC = −0.25 A; VCE = −5 V; f = 100 MHz; Tamb = 25 °C 60 − MHz MGD841 160 handbook, full pagewidth hFE 120 80 40 0 10−1 1 102 10 VCE = −1 V. Fig.2 DC current gain; typical values. 1997 Mar 04 4 103 IC (mA) 104 Philips Semiconductors Product specification PNP power transistor BD132 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1997 Mar 04 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 5 Philips Semiconductors Product specification PNP power transistor BD132 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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