DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF583; BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS • For use in video output stages of black and white and colour television receivers. 2 DESCRIPTION 3 NPN transistors in a TO-202 plastic package. 1 PINNING PIN DESCRIPTION 1 2 3 MBH793 1 emitter 2 collector 3 base Fig.1 Simplified outline (TO-202) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BF583 − 300 V BF585 − 350 V − 400 V BF583 − 250 V BF585 − 300 V BF587 − 350 V − 100 mA − 1.6 W BF587 VCEO MIN. collector-emitter voltage open base ICM peak collector current Ptot total power dissipation in free air; Tamb ≤ 25 °C hFE DC current gain IC = 25 mA; VCE = 20 V − 50 Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 1.8 pF fT transition frequency IC = 10 mA; VCE = 10 V 70 110 MHz 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER CONDITIONS collector-base voltage MAX. UNIT open emitter BF583 − 300 V BF585 − 350 V − 400 V BF583 − 250 V BF585 − 300 V − 350 V − 5 V mA BF587 VCEO MIN. collector-emitter voltage open base BF587 VEBO emitter-base voltage open collector IC collector current (DC) 50 − ICM peak collector current − 100 mA IBM peak base current − 50 mA Ptot total power dissipation in free air; Tamb ≤ 25 °C − 1.6 W in free air; Tmb ≤ 25 °C − 5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 78 K/W Rth j-mb thermal resistance from junction to mounting base 25 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 300 V − 20 nA IE = 0; VCB = 250 V; Tj = 150 °C − 20 µA IC = 0; VEB = 5 V − 100 nA DC current gain IC = 25 mA; VCE = 20 V 50 − IC = 40 mA; VCE = 20 V 20 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 600 mV Cc collector capacitance IE = ie = 0; VCB = 30 V; f = 1 MHz − 2.5 pF Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 1.8 pF fT transition frequency IC = 10 mA; VCE = 10 V 70 110 MHz ICBO collector cut-off current IEBO emitter cut-off current hFE 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 PACKAGE OUTLINE 10.4 max handbook, full pagewidth 0.56 max 3.8 3.6 3.8 24.2 max 8.6 max 2.5 max (1) 2.4 max 12.2 min 1 2 3 0.8 (3x) 0.6 2.54 0.65 max 2.54 1.6 4.6 max 10 MGA322 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-202. 1996 Dec 09 4 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Dec 09 5 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 NOTES 1996 Dec 09 6 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 NOTES 1996 Dec 09 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 247 9145, Fax. +7 095 247 9144 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1996 SCA52 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117041/00/02/pp8 Date of release: 1996 Dec 09 Document order number: 9397 750 01571